Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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TK10E60W,S1VXMOSFET N-CH 600V 9.7A TO220 |
2204 | 2.92 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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TSM80N1R2CP ROGMOSFET N-CH 800V 5.5A TO252 |
3635 | 5.69 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP7530PBFMOSFET N-CH 60V 195A TO247 |
3561 | 4.13 |
ДобавитьРасследования |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA200N055T2MOSFET N-CH 55V 200A TO263 |
2901 | 4.14 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 200A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 109 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STP80NF10FPMOSFET N-CH 100V 38A TO220FP |
3821 | 4.16 |
ДобавитьРасследования |
Tube | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 15mOhm @ 40A, 10V | 4V @ 250µA | 189 nC @ 10 V | ±20V | 4300 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA4N100PMOSFET N-CH 1000V 4A TO263 |
2401 | 4.16 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 3.3Ohm @ 2A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±20V | 1456 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TK100A10N1,S4XMOSFET N-CH 100V 100A TO220SIS |
3287 | 4.17 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 3.8mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R170CFD7XKSA1MOSFET N-CH 650V 14A TO220-3 |
2605 | 4.18 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R170CFD7XKSA1MOSFET N-CH 650V 8A TO220 |
2545 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP120P04P4L03AKSA1MOSFET P-CH 40V 120A TO220-3 |
3521 | 4.19 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234 nC @ 10 V | ±16V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP120P04P4L03AKSA2MOSFET P-CH 40V 120A TO220-3 |
3971 | 4.19 |
ДобавитьРасследования |
Tube | OptiMOS®-P2 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234 nC @ 10 V | +5V, -16V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TK25E60X,S1XMOSFET N-CH 600V 25A TO220 |
3839 | 4.20 |
ДобавитьРасследования |
Tube | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP22NM60NMOSFET N-CH 600V 16A TO220AB |
3289 | 4.22 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 220mOhm @ 8A, 10V | 4V @ 100µA | 44 nC @ 10 V | ±30V | 1300 pF @ 50 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHF22N60E-GE3MOSFET N-CH 600V 21A TO220 |
2535 | 4.23 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R190C6XKSA1MOSFET N-CH 600V 20.2A TO220-FP |
2807 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA80R280P7XKSA1MOSFET N-CH 800V 17A TO220-3F |
2430 | 4.25 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36 nC @ 10 V | ±20V | 1200 pF @ 500 V | Super Junction | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP80R280P7XKSA1MOSFET N-CH 800V 17A TO220-3 |
3730 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36 nC @ 10 V | ±20V | 1200 pF @ 500 V | Super Junction | 101W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STB40N60M2MOSFET N-CH 600V 34A D2PAK |
3360 | 7.12 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTP90N15TMOSFET N-CH 150V 90A TO220AB |
3526 | 4.30 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 90A (Tc) | 10V | 20mOhm @ 45A, 10V | 4.5V @ 1mA | 80 nC @ 10 V | ±30V | 4100 pF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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VN2224N3-GMOSFET N-CH 240V 540MA TO92-3 |
3873 | 4.31 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 240 V | 540mA (Tj) | 5V, 10V | 1.25Ohm @ 2A, 10V | 3V @ 5mA | - | ±20V | 350 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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