Грузовой вагон ( 
Регистрация| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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TK4R3A06PL,S4XMOSFET N-CH 60V 68A TO220SIS |
2219 | 1.40 |
ДобавитьРасследования |
Tube | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 68A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 36W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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STD16N65M2MOSFET N-CH 650V 11A DPAK |
3659 | 2.60 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5 nC @ 10 V | ±25V | 718 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TK650A60F,S4XMOSFET N-CH 600V 11A TO220SIS |
3425 | 1.41 |
ДобавитьРасследования |
Tube | U-MOSIX | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34 nC @ 10 V | ±30V | 1320 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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TK30E06N1,S1XMOSFET N-CH 60V 43A TO220 |
3640 | 1.02 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Ta) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16 nC @ 10 V | ±20V | 1050 pF @ 30 V | - | 53W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA70R600P7SXKSA1MOSFET N-CH 700V 8.5A TO220 |
3222 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5 nC @ 10 V | ±16V | 364 pF @ 400 V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPAN70R600P7SXKSA1MOSFET N-CH 700V 8.5A TO220 |
3191 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5 nC @ 10 V | ±16V | 364 pF @ 400 V | - | 24.9W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF520SPBFMOSFET N-CH 100V 9.2A D2PAK |
2288 | 1.42 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7613-100E,118MOSFET N-CH 100V 72A D2PAK |
3869 | 2.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 72A (Tc) | 10V | 13mOhm @ 20A, 10V | 4V @ 1mA | 97.2 nC @ 10 V | ±20V | 4533 pF @ 20 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC031N06NS3GATMA1MOSFET N-CH 60V 100A TDSON-8-1 |
2478 | 2.88 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 93µA | 130 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMFS6H801NT1GMOSFET N-CH 80V 23A/157A 5DFN |
2786 | 2.91 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 23A (Ta), 157A (Tc) | 10V | 2.8mOhm @ 50A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 4120 pF @ 40 V | - | 3.8W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMFS3D6N10MCLT1GMOSFET N-CH 100V 19.5A/131A 5DFN |
2495 | 2.91 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19.5A (Ta), 131A (Tc) | 4.5V, 10V | 3.6mOhm @ 48A, 10V | 3V @ 270µA | 60 nC @ 10 V | ±20V | 4411 pF @ 50 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQP7N20MOSFET N-CH 200V 6.6A TO220-3 |
2118 | 1.44 |
ДобавитьРасследования |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 6.6A (Tc) | 10V | 690mOhm @ 3.3A, 10V | 5V @ 250µA | 10 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STD5NM60T4MOSFET N-CH 600V 5A DPAK |
3103 | 2.68 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TPWR7904PB,L1XHQMOSFET N-CH 40V 150A 8DSOP |
3161 | 3.13 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Ta) | 6V, 10V | 0.79mOhm @ 75A, 10V | 3V @ 1mA | 85 nC @ 10 V | ±20V | 6650 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount |
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Таблицы данных |
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SPD50P03LGBTMA1MOSFET P-CH 30V 50A TO252-5 |
2496 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 10V | 7mOhm @ 50A, 10V | 2V @ 250µA | 126 nC @ 10 V | ±20V | 6880 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMYS3D3N06CLTWGMOSFET N-CH 60V 26A/133A 4LFPAK |
2997 | 3.17 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 26A (Ta), 133A (Tc) | 4.5V, 10V | 3mOhm @ 50A, 10V | 2V @ 250µA | 40.7 nC @ 10 V | ±20V | 2880 pF @ 25 V | - | 3.9W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFU210PBFMOSFET N-CH 200V 2.6A TO251AA |
9000 | 1.45 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU014PBFMOSFET N-CH 60V 7.7A TO251AA |
3497 | 1.45 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFD9014PBFMOSFET P-CH 60V 1.1A 4DIP |
2493 | 1.45 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.1A (Ta) | 10V | 500mOhm @ 660mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFD9010PBFMOSFET P-CH 50V 1.1A 4DIP |
3976 | 1.45 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 1.1A (Tc) | 10V | 500mOhm @ 580mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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