Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
,TO-226_straightlead.jpg)
|
TN0620N3-G-P002MOSFET N-CH 200V 250MA TO92-3 |
2467 | 1.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 250mA (Tj) | 5V, 10V | 6Ohm @ 500mA, 10V | 1.6V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
FDMS2672MOSFET N-CH 200V 3.7A/20A 8MLP |
3511 | 3.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Ta), 20A (Tc) | 6V, 10V | 77mOhm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 2315 pF @ 100 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
FDMS4D5N08LCMOSFET N-CH 80V 17A/116A 8PQFN |
2154 | 3.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 17A (Ta), 116A (Tc) | 4.5V, 10V | 4.2mOhm @ 37A, 10V | 2.5V @ 210µA | 71 nC @ 10 V | ±20V | 5100 pF @ 40 V | - | 2.5W (Ta), 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
DMN95H8D5HCTIMOSFET N-CHANNEL 950V ITO220AB |
3684 | 1.38 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 2.5A (Tc) | 10V | 7Ohm @ 1A, 10V | 5V @ 250µA | 7.9 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
STP10P6F6MOSFET P-CH 60V 10A TO220 |
2237 | 1.38 |
ДобавитьРасследования |
Tube | DeepGATE™, STripFET™ VI | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 10V | 160mOhm @ 5A, 10V | 4V @ 250µA | 6.4 nC @ 10 V | ±20V | 340 pF @ 48 V | - | 30W (Tc) | 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
IPAN60R800CEXKSA1MOSFET N-CH 600V 8.4A TO220 |
2723 | 1.38 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.4A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | Super Junction | 27W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IRLR3705ZTRPBFMOSFET N-CH 55V 42A DPAK |
2905 | 2.03 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66 nC @ 5 V | ±16V | 2900 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SQM40020EL_GE3MOSFET N-CH 40V 100A TO263 |
2357 | 2.34 |
ДобавитьРасследования |
Cut Tape (CT),Digi-Reel®,Tube | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.2V @ 250µA | 165 nC @ 10 V | ±20V | 8800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
TK1R5R04PB,LXGQMOSFET N-CH 40V 160A D2PAK |
3068 | 2.82 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 6V, 10V | 1.5mOhm @ 80A, 10V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | 175°C | Surface Mount |
|
Таблицы данных |
|
IRF6613TRPBFMOSFET N-CH 40V 23A DIRECTFET |
2270 | 2.86 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63 nC @ 4.5 V | ±20V | 5950 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SIR640ADP-T1-GE3MOSFET N-CH 40V 41.6A/100A PPAK |
2146 | 2.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 41.6A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2V @ 250µA | 90 nC @ 10 V | ±20V | 4240 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPD12CN10NGATMA1MOSFET N-CH 100V 67A TO252-3 |
3920 | 2.86 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 67A (Tc) | 10V | 12.4mOhm @ 67A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4320 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
SUD50P06-15-BE3MOSFET P-CH 60V 50A DPAK |
3161 | 2.79 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 17A, 10V | 3V @ 250µA | 165 nC @ 10 V | ±20V | 4950 pF @ 25 V | - | 2.5W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPAW60R600P7SXKSA1MOSFET N-CH 600V 6A TO220 |
3889 | 1.39 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
TK58A06N1,S4XMOSFET N-CH 60V 58A TO220SIS |
2801 | 1.39 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 58A (Tc) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IPU95R3K7P7AKMA1MOSFET N-CH 950V 2A TO251-3 |
2047 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 2A (Tc) | 10V | 3.7Ohm @ 800mA, 10V | 3.5V @ 40µA | 6 nC @ 10 V | ±20V | 196 pF @ 400 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
SIHD6N80AE-GE3MOSFET N-CH 800V 5A DPAK |
2751 | 1.39 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
;;2.jpg)
|
STD3NK100ZMOSFET N-CH 1000V 2.5A DPAK |
3613 | 2.58 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 2.5A (Tc) | 10V | 6Ohm @ 1.25A, 10V | 4.5V @ 50µA | 18 nC @ 10 V | ±30V | 601 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
STD5N95K5MOSFET N-CH 950V 3.5A DPAK |
3811 | 2.59 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 3.5A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5 nC @ 10 V | ±30V | 220 pF @ 100 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SQM40N10-30_GE3MOSFET N-CH 100V 40A TO263 |
3709 | 2.36 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 6V, 10V | 30mOhm @ 15A, 10V | 3.5V @ 250µA | 62 nC @ 10 V | ±20V | 3345 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
Запрос котировок
