Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76629D3ST

Таблицы данных

HUF76629D3ST

HUF76629D3ST

MOSFET N-CH 100V 20A TO252AA

onsemi

3064 2.88
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1285 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR668ADP-T1-RE3

Таблицы данных

SIDR668ADP-T1-RE3

SIDR668ADP-T1-RE3

MOSFET N-CH 100V 23.3A/104A PPAK

Vishay Siliconix

3063 2.60
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 23.3A (Ta), 104A (Tc) 7.5V, 10V 4.8mOhm @ 20A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 3750 pF @ 50 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD90N03S4L02ATMA1

Таблицы данных

IPD90N03S4L02ATMA1

IPD90N03S4L02ATMA1

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies

3487 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 2.2mOhm @ 90A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y2R0-40HX

Таблицы данных

BUK7Y2R0-40HX

BUK7Y2R0-40HX

MOSFET N-CH 40V 120A LFPAK56

Nexperia USA Inc.

2248 2.71
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Ta) 10V 2mOhm @ 25A, 10V 3.6V @ 1mA 90.5 nC @ 10 V +20V, -10V 5450 pF @ 25 V - 217W (Ta) -55°C ~ 175°C (TJ) Surface Mount
TN0610N3-G

Таблицы данных

TN0610N3-G

TN0610N3-G

MOSFET N-CH 100V 500MA TO92-3

Microchip Technology

2778 1.33
- +

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Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 500mA (Tj) 3V, 10V 1.5Ohm @ 750mA, 10V 2V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR882DP-T1-GE3

Таблицы данных

SIR882DP-T1-GE3

SIR882DP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix

3145 2.63
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 8.7mOhm @ 20A, 10V 2.8V @ 250µA 58 nC @ 10 V ±20V 1930 pF @ 50 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1010ZSTRLPBF

Таблицы данных

IRF1010ZSTRLPBF

IRF1010ZSTRLPBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

3391 2.26
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD25N15-52-BE3 SUD25N15-52-BE3

SUD25N15-52-BE3

MOSFET N-CH 150V 25A DPAK

Vishay Siliconix

3520 2.63
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 6V, 10V 52mOhm @ 5A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 1725 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R660CFDAATMA1

Таблицы данных

IPD65R660CFDAATMA1

IPD65R660CFDAATMA1

MOSFET N-CH 650V 6A TO252-3

Infineon Technologies

3429 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 3.22A, 10V 4.5V @ 214.55µA 20 nC @ 10 V ±20V 543 pF @ 100 V - 62.5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRLU014PBF

Таблицы данных

IRLU014PBF

IRLU014PBF

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix

2582 1.35
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RSJ301N10FRATL

Таблицы данных

RSJ301N10FRATL

RSJ301N10FRATL

MOSFET N-CH 100V 30A LPTS

Rohm Semiconductor

2624 2.75
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta) 4V, 10V 46mOhm @ 15A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 2100 pF @ 25 V - 50W (Ta) 150°C (TJ) Surface Mount
PSMN1R0-25YLDX

Таблицы данных

PSMN1R0-25YLDX

PSMN1R0-25YLDX

MOSFET N-CH 25V 100A LFPAK56

Nexperia USA Inc.

3374 2.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 0.89mOhm @ 25A, 10V 2.2V @ 1mA 71.8 nC @ 10 V ±20V 5308 pF @ 12 V Schottky Diode (Body) 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB9NK80Z

Таблицы данных

STB9NK80Z

STB9NK80Z

MOSFET N-CH 800V 5.2A D2PAK

STMicroelectronics

3000 2.51
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 5.2A (Tc) 10V 1.8Ohm @ 2.6A, 10V 4.5V @ 100µA 40 nC @ 10 V ±30V 1138 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RCX051N25

Таблицы данных

RCX051N25

RCX051N25

MOSFET N-CH 250V 5A TO220FM

Rohm Semiconductor

3228 1.36
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 5A (Tc) 10V 1.36Ohm @ 2.5A, 10V 5.5V @ 1mA 8.5 nC @ 10 V ±30V 350 pF @ 25 V - 2.23W (Ta), 30W (Tc) 150°C (TJ) Through Hole
IPB50N10S3L16ATMA1

Таблицы данных

IPB50N10S3L16ATMA1

IPB50N10S3L16ATMA1

MOSFET N-CH 100V 50A TO263-3

Infineon Technologies

2877 2.76
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 15.4mOhm @ 50A, 10V 2.4V @ 60µA 64 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK40E06N1,S1X

Таблицы данных

TK40E06N1,S1X

TK40E06N1,S1X

MOSFET N-CH 60V 40A TO220

Toshiba Semiconductor and Storage

3384 0.99
- +

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Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 10V 10.4mOhm @ 20A, 10V 4V @ 300µA 23 nC @ 10 V ±20V 1700 pF @ 30 V - 67W (Tc) 150°C (TJ) Through Hole
TPHR7904PB,L1XHQ

Таблицы данных

TPHR7904PB,L1XHQ

TPHR7904PB,L1XHQ

MOSFET N-CH 40V 150A 8SOP

Toshiba Semiconductor and Storage

2291 2.95
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Ta) 6V, 10V 0.79mOhm @ 75A, 10V 3V @ 1mA 85 nC @ 10 V ±20V 6650 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
NTMFS5C423NLT1G

Таблицы данных

NTMFS5C423NLT1G

NTMFS5C423NLT1G

MOSFET N-CH 40V 5DFN

onsemi

3302 2.78
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 20 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF640STRLPBF

Таблицы данных

IRF640STRLPBF

IRF640STRLPBF

MOSFET N-CH 200V 18A TO263

Vishay Siliconix

3636 2.30
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CSD19502Q5B

Таблицы данных

CSD19502Q5B

CSD19502Q5B

MOSFET N-CH 80V 100A 8VSON

Texas Instruments

2275 2.78
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® NexFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Ta) 6V, 10V 4.1mOhm @ 19A, 10V 3.3V @ 250µA 62 nC @ 10 V ±20V 4870 pF @ 40 V - 3.1W (Ta), 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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