Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTY08N50D2-TRL IXTY08N50D2-TRL

IXTY08N50D2-TRL

MOSFET N-CH 500V 800MA TO252AA

IXYS

2196 2.44
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 800mA (Tj) 0V 4.6Ohm @ 400mA, 0V 4.5V @ 25µA 12.7 nC @ 5 V ±20V 312 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB44N10TM

Таблицы данных

FQB44N10TM

FQB44N10TM

MOSFET N-CH 100V 43.5A D2PAK

onsemi

2022 1.91
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 43.5A (Tc) 10V 39mOhm @ 21.75A, 10V 4V @ 250µA 62 nC @ 10 V ±25V 1800 pF @ 25 V - 3.75W (Ta), 146W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK110A10PL,S4X

Таблицы данных

TK110A10PL,S4X

TK110A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

3252 1.14
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4.5V, 10V 10.8mOhm @ 18A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 36W (Tc) 175°C Through Hole
IPB054N08N3GATMA1

Таблицы данных

IPB054N08N3GATMA1

IPB054N08N3GATMA1

MOSFET N-CH 80V 80A D2PAK

Infineon Technologies

3671 2.31
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.4mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK1K0A60F,S4X

Таблицы данных

TK1K0A60F,S4X

TK1K0A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2429 1.16
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 3.8A, 10V 4V @ 770µA 24 nC @ 10 V ±30V 890 pF @ 300 V - 40W (Tc) 150°C Through Hole
FDB12N50TM

Таблицы данных

FDB12N50TM

FDB12N50TM

MOSFET N-CH 500V 11.5A D2PAK

onsemi

3884 1.96
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 650mOhm @ 6A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1315 pF @ 25 V - 165W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB86102LZ

Таблицы данных

FDB86102LZ

FDB86102LZ

MOSFET N-CH 100V 8.3A/30A TO263

onsemi

2602 1.96
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta), 30A (Tc) 4.5V, 10V 24mOhm @ 8.3A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 1275 pF @ 50 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TPHR8504PL,L1Q

Таблицы данных

TPHR8504PL,L1Q

TPHR8504PL,L1Q

MOSFET N-CH 40V 150A 8SOP

Toshiba Semiconductor and Storage

3995 1.85
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 0.85mOhm @ 50A, 10V 2.4V @ 1mA 103 nC @ 10 V ±20V 9600 pF @ 20 V - 1W (Ta), 170W (Tc) 175°C (TJ) Surface Mount
BSZ0602LSATMA1

Таблицы данных

BSZ0602LSATMA1

BSZ0602LSATMA1

MOSFET N-CH 80V 13A/40A TSDSON

Infineon Technologies

2169 1.94
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 13A (Ta), 40A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.3V @ 36µA 18 nC @ 4.5 V ±20V 2340 pF @ 40 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD90N06S4L03ATMA2

Таблицы данных

IPD90N06S4L03ATMA2

IPD90N06S4L03ATMA2

MOSFET N-CH 60V 90A TO252-31

Infineon Technologies

2860 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD9407L-F085

Таблицы данных

FDD9407L-F085

FDD9407L-F085

MOSFET N-CH 40V 100A DPAK

onsemi

3795 2.72
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 80A, 4.5V 3V @ 250µA 125 nC @ 10 V ±20V 6700 pF @ 25 V - 227W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FQB8N60CTM

Таблицы данных

FQB8N60CTM

FQB8N60CTM

MOSFET N-CH 600V 7.5A D2PAK

onsemi

3073 2.10
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1255 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB130N6F7

Таблицы данных

STB130N6F7

STB130N6F7

MOSFET N-CH 60V 80A D2PAK

STMicroelectronics

2394 2.32
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5mOhm @ 40A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2600 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB19NF20

Таблицы данных

STB19NF20

STB19NF20

MOSFET N-CH 200V 15A D2PAK

STMicroelectronics

2583 2.16
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MESH OVERLAY™ Active N-Channel MOSFET (Metal Oxide) 200 V 15A (Tc) 10V 160mOhm @ 7.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 800 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHJ8N60E-T1-GE3

Таблицы данных

SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

MOSFET N-CH 600V 8A PPAK SO-8

Vishay Siliconix

3636 2.30
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 520mOhm @ 4A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 754 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR870BDP-T1-RE3

Таблицы данных

SIR870BDP-T1-RE3

SIR870BDP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK

Vishay Siliconix

3734 2.31
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18.8A (Ta), 81A (Tc) 4.5V, 10V 6.1mOhm @ 15A, 10V 3V @ 250µA 110 nC @ 10 V ±20V 4870 pF @ 50 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5406TRPBF

Таблицы данных

IRFH5406TRPBF

IRFH5406TRPBF

MOSFET N-CH 60V 11A/40A 8PQFN

Infineon Technologies

2921 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 40A (Tc) 10V 14.4mOhm @ 24A, 10V 4V @ 50µA 35 nC @ 10 V ±20V 1256 pF @ 25 V - 3.6W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB60NF06LT4

Таблицы данных

STB60NF06LT4

STB60NF06LT4

MOSFET N-CH 60V 60A D2PAK

STMicroelectronics

3401 2.19
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 5V, 10V 14mOhm @ 30A, 10V 1V @ 250µA 66 nC @ 4.5 V ±15V 2000 pF @ 25 V - 110W (Tc) -65°C ~ 175°C (TJ) Surface Mount
FDD9409-F085

Таблицы данных

FDD9409-F085

FDD9409-F085

MOSFET N-CH 40V 90A DPAK

onsemi

2244 1.89
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.2mOhm @ 80A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 3130 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB8314PBF

Таблицы данных

IRLB8314PBF

IRLB8314PBF

MOSFET N-CH 30V 171A TO220-3

Infineon Technologies

3017 1.19
- +

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Расследования

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 171A (Tc) 4.5V, 10V 2.4mOhm @ 68A, 10V 2.2V @ 100µA 60 nC @ 4.5 V ±20V 5050 pF @ 15 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
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