Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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NDP6060LMOSFET N-CH 60V 48A TO220-3 |
2438 | 3.22 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 5V, 10V | 20mOhm @ 24A, 10V | 2V @ 250µA | 60 nC @ 5 V | ±16V | 2000 pF @ 25 V | - | 100W (Tc) | -65°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTY08N100D2MOSFET N-CH 1000V 800MA TO252 |
3324 | 3.24 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 800mA (Tc) | - | 21Ohm @ 400mA, 0V | - | 14.6 nC @ 5 V | ±20V | 325 pF @ 25 V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB40NF20MOSFET N-CH 200V 40A D2PAK |
3304 | 5.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | STripFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 40A (Tc) | 10V | 45mOhm @ 20A, 10V | 4V @ 250µA | 75 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDBL0240N100MOSFET N-CH 100V 210A 8HPSOF |
2547 | 6.54 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Tc) | 10V | 2.8mOhm @ 80A, 10V | 4V @ 250µA | 111 nC @ 10 V | ±20V | 8755 pF @ 50 V | - | 3.5W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STP24N60M2MOSFET N-CH 600V 18A TO220 |
2826 | 3.30 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDMS86202ET120MOSFET N-CH 120V 13.5/102A PWR56 |
2486 | 6.61 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 13.5A (Ta), 102A (Tc) | 6V, 10V | 7.2mOhm @ 13.5A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 4585 pF @ 60 V | - | 3.3W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMNR55-40SSHJPSMNR55-40SSH/SOT1235/LFPAK88 |
3951 | 6.22 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 500A (Ta) | 10V | 0.55mOhm @ 25A, 10V | 3.6V @ 1mA | 267 nC @ 10 V | ±20V | 21162 pF @ 25 V | - | 375W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB3207PBFMOSFET N-CH 75V 170A TO220AB |
2300 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 170A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7600 pF @ 50 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTMFS6H800NT1GMOSFET N-CH 80V 28A/203A 5DFN |
3647 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 28A (Ta), 203A (Tc) | 6V, 10V | 2.1mOhm @ 50A, 10V | 4V @ 330µA | 85 nC @ 10 V | ±20V | 5530 pF @ 40 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN7R0-100PS,127MOSFET N-CH 100V 100A TO220AB |
3334 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 12mOhm @ 15A, 10V | 4V @ 1mA | 125 nC @ 10 V | ±20V | 6686 pF @ 50 V | - | 269W (Tc) | - | Through Hole |
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Таблицы данных |
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STP11N60DM2MOSFET N-CH 600V 10A TO220 |
3728 | 1.93 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 420mOhm @ 5A, 10V | 5V @ 250µA | 16.5 nC @ 10 V | ±25V | 614 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH6N100D2MOSFET N-CH 1000V 6A TO247 |
2637 | 9.18 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 6A (Tc) | - | 2.2Ohm @ 3A, 0V | - | 95 nC @ 5 V | ±20V | 2650 pF @ 25 V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH1N200P3MOSFET N-CH 2000V 1A TO247 |
2002 | 9.22 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 1A (Tc) | 10V | 40Ohm @ 500mA, 10V | 4V @ 250µA | 23.5 nC @ 10 V | ±20V | 646 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R099C6FKSA1MOSFET N-CH 600V 37.9A TO247-3 |
2099 | 9.36 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPT020N10N5ATMA1MOSFET N-CH 100V 31A/260A 8HSOF |
2490 | 7.37 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Ta), 260A (Tc) | 6V, 10V | 2mOhm @ 150A, 10V | 3.8V @ 202µA | 152 nC @ 10 V | ±20V | 11000 pF @ 50 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AOT20S60LMOSFET N-CH 600V 20A TO220 |
2152 | 3.39 |
ДобавитьРасследования |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8 nC @ 10 V | ±30V | 1038 pF @ 100 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF100B201MOSFET N-CH 100V 192A TO220AB |
3292 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 192A (Tc) | 10V | 4.2mOhm @ 115A, 10V | 4V @ 250µA | 255 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SUP90142E-GE3MOSFET N-CH 200V 90A TO220AB |
2003 | 3.43 |
ДобавитьРасследования |
Tube | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 7.5V, 10V | 15.2mOhm @ 30A, 10V | 4V @ 250µA | 87 nC @ 10 V | ±20V | 31200 pF @ 100 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFS4310TRLPBFMOSFET N-CH 100V 130A D2PAK |
2139 | 5.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STB15N80K5MOSFET N CH 800V 14A D2PAK |
3399 | 5.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 14A (Tc) | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±30V | 1100 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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