Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CSD19536KTT

Таблицы данных

CSD19536KTT

CSD19536KTT

MOSFET N-CH 100V 200A DDPAK

Texas Instruments

2685 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk NexFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Ta) 6V, 10V 2.4mOhm @ 100A, 10V 3.2V @ 250µA 153 nC @ 10 V ±20V 12000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP17N25S3100AKSA1

Таблицы данных

IPP17N25S3100AKSA1

IPP17N25S3100AKSA1

MOSFET N-CH 250V 17A TO220-3

Infineon Technologies

3001 3.51
- +

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 17A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 54µA 19 nC @ 10 V ±20V 1500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP70030E-GE3

Таблицы данных

SUP70030E-GE3

SUP70030E-GE3

MOSFET N-CH 100V 150A TO220AB

Vishay Siliconix

3008 3.52
- +

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Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 7.5V, 10V 3.18mOhm @ 30A, 10V 4V @ 250µA 214 nC @ 10 V ±20V 10870 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP460BPBF

Таблицы данных

IRFP460BPBF

IRFP460BPBF

MOSFET N-CH 500V 20A TO247AC

Vishay Siliconix

2984 3.53
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 10A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 3094 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18535KTTT

Таблицы данных

CSD18535KTTT

CSD18535KTTT

MOSFET N-CH 60V 200A/279A DDPAK

Texas Instruments

3899 4.17
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta), 279A (Tc) 4.5V, 10V 2mOhm @ 100A, 10V 2.4V @ 250µA 81 nC @ 10 V ±20V 6620 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF840PBF-BE3 IRF840PBF-BE3

IRF840PBF-BE3

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix

1015 2.03
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP47P06

Таблицы данных

FQP47P06

FQP47P06

MOSFET P-CH 60V 47A TO220-3

onsemi

2540 3.54
- +

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Tube QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 10V 26mOhm @ 23.5A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3600 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB20NM50T4

Таблицы данных

STB20NM50T4

STB20NM50T4

MOSFET N-CH 550V 20A D2PAK

STMicroelectronics

3005 5.93
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ Active N-Channel MOSFET (Metal Oxide) 550 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 250µA 56 nC @ 10 V ±30V 1480 pF @ 25 V - 192W (Tc) -65°C ~ 150°C (TJ) Surface Mount
MCTL300N10Y-TP

Таблицы данных

MCTL300N10Y-TP

MCTL300N10Y-TP

MOSFET N-CH 100V 300A TOLL-8L

Micro Commercial Co

3402 6.95
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) - 1.45mOhm @ 30A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 13258 pF @ 50 V - 500W -55°C ~ 150°C (TJ) Surface Mount
AUIRFR4620TRL

Таблицы данных

AUIRFR4620TRL

AUIRFR4620TRL

MOSFET N-CH 200V 24A DPAK

Infineon Technologies

3998 3.73
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS4030TRL7PP

Таблицы данных

IRLS4030TRL7PP

IRLS4030TRL7PP

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies

3783 5.79
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R190P6XKSA1

Таблицы данных

IPA60R190P6XKSA1

IPA60R190P6XKSA1

MOSFET N-CH 600V 20.2A TO220-FP

Infineon Technologies

2919 1.00
- +

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Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 7.6A, 10V 4.5V @ 630µ 37 nC @ 10 V ±20V 1750 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB7430PBF

Таблицы данных

IRFB7430PBF

IRFB7430PBF

MOSFET N CH 40V 195A TO220

Infineon Technologies

3249 3.67
- +

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Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.3mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB24N80AE-GE3 SIHB24N80AE-GE3

SIHB24N80AE-GE3

MOSFET N-CH 800V 21A D2PAK

Vishay Siliconix

3487 3.73
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 21A (Tc) - 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STH275N8F7-2AG

Таблицы данных

STH275N8F7-2AG

STH275N8F7-2AG

MOSFET N-CH 80V 180A H2PAK-2

STMicroelectronics

3686 6.24
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.1mOhm @ 90A, 10V 4.5V @ 250µA 193 nC @ 10 V ±20V 13600 pF @ 50 V - 315W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA180N10T-TRL IXTA180N10T-TRL

IXTA180N10T-TRL

MOSFET N-CH 100V 180A TO263

IXYS

3972 6.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Trench Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±20V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI9540GPBF

Таблицы данных

IRFI9540GPBF

IRFI9540GPBF

MOSFET P-CH 100V 11A TO220-3

Vishay Siliconix

3288 3.79
- +

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Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 10V 200mOhm @ 6.6A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPA11N80C3XKSA1

Таблицы данных

SPA11N80C3XKSA1

SPA11N80C3XKSA1

MOSFET N-CH 800V 11A TO220-FP

Infineon Technologies

2799 3.79
- +

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Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 85 nC @ 10 V ±20V 1600 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90100E-GE3

Таблицы данных

SUP90100E-GE3

SUP90100E-GE3

N-CHANNEL 200 V (D-S) MOSFET TO-

Vishay Siliconix

2082 3.80
- +

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Bulk TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 7.5V, 10V 10.9mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3930 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN004-60B,118

Таблицы данных

PSMN004-60B,118

PSMN004-60B,118

MOSFET N-CH 60V 75A D2PAK

Nexperia USA Inc.

2013 3.48
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 3.6mOhm @ 25A, 10V 4V @ 1mA 168 nC @ 10 V ±20V 8300 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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