Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMS7650DC

Таблицы данных

FDMS7650DC

FDMS7650DC

MOSFET N-CH 30V 47A POWER56

onsemi

3677 5.42
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Ta), 100A (Tc) 4.5V, 10V 0.99mOhm @ 36A, 10V 2.7V @ 250µA 206 nC @ 10 V ±20V 14765 pF @ 15 V - 3.3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS4C01NT1G

Таблицы данных

NVMFS4C01NT1G

NVMFS4C01NT1G

MOSFET N-CH 30V 49A/319A 5DFN

onsemi

3244 5.18
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 49A (Ta), 319A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.84W (Ta), 161W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4610PBF

Таблицы данных

IRFB4610PBF

IRFB4610PBF

MOSFET N-CH 100V 73A TO220AB

Infineon Technologies

3189 2.74
- +

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMFS0D5N03CT1G

Таблицы данных

NTMFS0D5N03CT1G

NTMFS0D5N03CT1G

MOSFET, POWER, SINGLE N-CHANNEL

onsemi

2213 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 65A (Ta), 464A (Tc) 4.5V, 10V 0.52mOhm @ 30A, 10V 2.2V @ 330µA 178 nC @ 10 V ±20V 13000 pF @ 15 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
IRFS7430TRL7PP

Таблицы данных

IRFS7430TRL7PP

IRFS7430TRL7PP

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

3500 4.39
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410TRLPBF

Таблицы данных

IRFS4410TRLPBF

IRFS4410TRLPBF

MOSFET N-CH 100V 88A D2PAK

Infineon Technologies

2858 4.54
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB3307ZPBF

Таблицы данных

IRFB3307ZPBF

IRFB3307ZPBF

MOSFET N-CH 75V 120A TO220AB

Infineon Technologies

3789 2.85
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Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2907ZSTRLPBF

Таблицы данных

IRF2907ZSTRLPBF

IRF2907ZSTRLPBF

MOSFET N-CH 75V 160A D2PAK

Infineon Technologies

2373 4.56
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB2532

Таблицы данных

FDB2532

FDB2532

MOSFET N-CH 150V 8A/79A D2PAK

onsemi

2497 4.61
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Ta), 79A (Tc) 6V, 10V 16mOhm @ 33A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 5870 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7534PBF

Таблицы данных

IRFB7534PBF

IRFB7534PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies

3602 2.90
- +

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Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN4R6-60PS,127

Таблицы данных

PSMN4R6-60PS,127

PSMN4R6-60PS,127

MOSFET N-CH 60V 100A TO220AB

Nexperia USA Inc.

3366 2.90
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.6mOhm @ 25A, 10V 4V @ 1mA 70.8 nC @ 10 V ±20V 4426 pF @ 30 V - 211W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDBL86561-F085

Таблицы данных

FDBL86561-F085

FDBL86561-F085

MOSFET N-CH 60V 300A 8HPSOF

onsemi

3338 5.80
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 300A (Tc) 10V 1.1mOhm @ 80A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 13650 pF @ 30 V - 429W (Tj) -55°C ~ 175°C (TJ) Surface Mount
RJ1P12BBDTLL

Таблицы данных

RJ1P12BBDTLL

RJ1P12BBDTLL

MOSFET N-CH 100V 120A LPTL

Rohm Semiconductor

3209 5.52
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 5.8mOhm @ 50A, 10V 4V @ 2.5mA 80 nC @ 10 V ±20V 4170 pF @ 50 V - 178W (Tc) 150°C (TJ) Surface Mount
NP100P04PLG-E1-AY

Таблицы данных

NP100P04PLG-E1-AY

NP100P04PLG-E1-AY

MOSFET P-CH 40V 100A TO263

Renesas Electronics America Inc

2591 4.24
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.7mOhm @ 50A, 10V 2.5V @ 1mA 320 nC @ 10 V ±20V 15100 pF @ 10 V - 1.8W (Ta), 200W (Tc) 175°C (TJ) Surface Mount
IPP60R280C6XKSA1

Таблицы данных

IPP60R280C6XKSA1

IPP60R280C6XKSA1

MOSFET N-CH 600V 13.8A TO220-3

Infineon Technologies

2944 3.27
- +

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Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB17N80C3ATMA1

Таблицы данных

SPB17N80C3ATMA1

SPB17N80C3ATMA1

MOSFET N-CH 800V 17A TO263-3

Infineon Technologies

2945 5.94
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 177 nC @ 10 V ±20V 2300 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB52N15DPBF

Таблицы данных

IRFB52N15DPBF

IRFB52N15DPBF

MOSFET N-CH 150V 51A TO220AB

Infineon Technologies

748 3.28
- +

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 51A (Tc) 10V 32mOhm @ 36A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2770 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUM40010EL-GE3

Таблицы данных

SUM40010EL-GE3

SUM40010EL-GE3

MOSFET N-CH 40V 120A D2PAK

Vishay Siliconix

3893 3.03
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® ThunderFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 2.5V @ 250µA 230 nC @ 10 V ±20V 11155 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NP100P06PDG-E1-AY

Таблицы данных

NP100P06PDG-E1-AY

NP100P06PDG-E1-AY

MOSFET P-CH 60V 100A TO263

Renesas Electronics America Inc

2630 4.70
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 2.5V @ 1mA 300 nC @ 10 V ±20V 15000 pF @ 10 V - 1.8W (Ta), 200W (Tc) 175°C (TJ) Surface Mount
SQD50P04-09L_GE3

Таблицы данных

SQD50P04-09L_GE3

SQD50P04-09L_GE3

MOSFET P-CH 40V 50A TO252

Vishay Siliconix

3470 3.05
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 9.4mOhm @ 17A, 10V 2.5V @ 250µA 155 nC @ 10 V ±20V 6675 pF @ 20 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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