Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FCU4300N80ZMOSFET N-CH 800V 1.6A I-PAK |
1000 | 0.55 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.6A (Tc) | 10V | 4.3Ohm @ 800mA, 10V | 4.5V @ 160µA | 8.8 nC @ 10 V | ±20V | 355 pF @ 100 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDP5N60NZMOSFET N-CH 600V 4.5A TO220-3 |
858 | 0.55 |
ДобавитьРасследования |
Bulk | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 2Ohm @ 2.25A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±25V | 600 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB04N03LATMOSFET N-CH 25V 80A TO263-3 |
550 | 1.20 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 55A, 10V | 2V @ 60µA | 32 nC @ 5 V | ±20V | 3877 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQPF9N25CPOWER FIELD-EFFECT TRANSISTOR, 8 |
9565 | 0.56 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.8A (Tc) | 10V | 430mOhm @ 4.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 710 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCU3400N80ZMOSFET N-CH 800V 2A I-PAK |
1691 | 0.56 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | ±20V | 400 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF7805ZTRPBFMOSFET N-CH 30V 16A 8SO |
388 | 1.22 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta) | 4.5V, 10V | 6.8mOhm @ 16A, 10V | 2.25V @ 250µA | 27 nC @ 4.5 V | ±20V | 2080 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7821TRPBFMOSFET N-CH 30V 13.6A 8SO |
2425 | 1.23 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1010 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7620-100A,118NEXPERIA BUK7620 - TRANSISTOR >3 |
3180 | 0.57 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 63A (Tc) | 10V | 20mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 4373 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
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IRFU7746PBFTRENCH 40<-<100V |
3000 | 0.57 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQPF9N25CYDTUMOSFET N-CH 250V 8.8A TO220F-3 |
1795 | 0.57 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.8A (Tc) | 10V | 430mOhm @ 4.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 710 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF3709PBFIRF3709 - 12V-300V N-CHANNEL POW |
913 | 0.57 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQPF19N10MOSFET N-CH 100V 13.6A TO220F |
582 | 0.57 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 13.6A (Tc) | 10V | 100mOhm @ 6.8A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 780 pF @ 25 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUZ31 H3045AMOSFET N-CH 200V 14.5A D2PAK |
3380 | 1.26 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 14.5A (Tc) | 10V | 200mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 1120 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDP6030BLPOWER FIELD-EFFECT TRANSISTOR, 4 |
7865 | 0.58 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | 3V @ 250µA | 17 nC @ 5 V | ±20V | 1160 pF @ 15 V | - | 60W (Tc) | -65°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK7628-100A,118MOSFET N-CH 100V 47A D2PAK |
7200 | 0.58 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 10V | 28mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 3100 pF @ 25 V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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2SJ361RYTR-EPOWER FIELD-EFFECT TRANSISTOR, 2 |
7000 | 0.58 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFH5104TR2PBFMOSFET N-CH 40V 24A/100A PQFN |
354 | 1.30 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 24A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 100µA | 80 nC @ 10 V | ±20V | 3120 pF @ 25 V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPN80R1K4P7ATMA1MOSFET N-CH 800V 4A SOT223 |
377 | 1.31 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10 nC @ 10 V | ±20V | 250 pF @ 500 V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2SJ4032SJ403 - J-II (EXISTING TYPE), 2 |
1552 | 0.59 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FQPF20N06POWER FIELD-EFFECT TRANSISTOR, 1 |
1124 | 0.59 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 10V | 60mOhm @ 7.5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 590 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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