Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SFT1446-HMOSFET N-CH 60V 20A TP |
2000 | 0.32 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 4V, 10V | 51mOhm @ 10A, 10V | 2.6V @ 1mA | 16 nC @ 10 V | ±20V | 750 pF @ 20 V | - | 1W (Ta), 23W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPF13N03LA GMOSFET N-CH 25V 30A TO252-3 |
630 | 0.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 8.3 nC @ 5 V | ±20V | 1043 pF @ 15 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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5P40P40V,RD(MAX)<85M@-10V,RD(MAX)<12 |
2209 | 0.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 5.3A (Ta) | 4.5V, 10V | 85mOhm @ 5A, 10V | 3V @ 250µA | 14 nC @ 10 V | ±20V | 650 pF @ 20 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7575-55A,127NEXPERIA BUK7575 - N-CHANNEL MO |
9897 | 0.33 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | - | ±20V | 483 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SFT1423-TL-EMOSFET N-CH 500V 2A TP-FA |
3500 | 0.33 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2A (Ta) | 4V, 10V | 4.9Ohm @ 1A, 10V | - | 8.7 nC @ 10 V | ±20V | 175 pF @ 30 V | - | 1W (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDD1600N10ALZDPOWER FIELD-EFFECT TRANSISTOR, 6 |
2400 | 0.33 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | 5V, 10V | 160mOhm @ 3.4A, 10V | 2.8V @ 250µA | 3.61 nC @ 10 V | ±20V | 225 pF @ 50 V | - | 14.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9540-100A,127NEXPERIA BUK9540 - N-CHANNEL MOS |
2063 | 0.33 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 39A (Tc) | 4.5V, 10V | 39mOhm @ 25A, 10V | 2V @ 1mA | 48 nC @ 5 V | ±15V | 3072 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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MMSF7N03HDR2TRANS MOSFET N-CH 30V 8.2A 8-PIN |
1666 | 0.33 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
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PJA3403_R1_0000130V P-CHANNEL ENHANCEMENT MODE M |
675 | 0.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | 2.5V, 10V | 98mOhm @ 3.1A, 10V | 1.3V @ 250µA | 11 nC @ 10 V | ±12V | 443 pF @ 15 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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2SK2109-T1-AZ2SK2109-T1-AZ - N-CHANNEL MOS FE |
6956 | 0.35 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 4V, 10V | 800mOhm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 111 pF @ 10 V | - | 2W (Ta) | 150°C | Surface Mount |
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Таблицы данных |
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PHB20N06T,118MOSFET N-CH 55V 20.3A D2PAK |
5428 | 0.35 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | 11 nC @ 10 V | ±20V | 483 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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2SJ635-TL-E2SJ635 - P-CHANNEL SILICON MOSFE |
4400 | 0.36 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta) | 4V, 10V | 60mOhm @ 6A, 10V | 2.6V @ 1mA | 45 nC @ 10 V | ±20V | 2200 pF @ 20 V | - | 1W (Ta), 30W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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PSMN018-100ESFQNEXPERIA PSMN018 - NEXTPOWER 100 |
4976 | 0.37 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 53A (Ta) | 7V, 10V | 18mOhm @ 15A, 10V | 4V @ 1mA | 21.4 nC @ 10 V | ±20V | 1482 pF @ 50 V | - | 111W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVD4806NT4G-VF01NVD4806 - SINGLE N-CHANNEL POWER |
2500 | 0.37 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Ta), 79A (Tc) | 4.5V, 11.5V | 6mOhm @ 30A, 11.5V | 2.5V @ 250µA | 37 nC @ 11.5 V | ±20V | 2142 pF @ 12 V | - | 1.4W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SPB42N03S2L-13MOSFET N-CH 30V 42A TO263-3 |
173 | 0.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5 nC @ 10 V | ±20V | 1130 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PJW7N06A_R2_0000160V N-CHANNEL ENHANCEMENT MODE M |
2734 | 0.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6.6A (Tc) | 4.5V, 10V | 34mOhm @ 6A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 1173 pF @ 25 V | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPN50R3K0CEATMA1MOSFET N-CH 500V 2.6A SOT223 |
659 | 0.57 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.6A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLTS2242TRPBFMOSFET P-CH 20V 6.9A 6TSOP |
239 | 0.57 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.9A (Ta) | 2.5V, 4.5V | 32mOhm @ 6.9A, 4.5V | 1.1V @ 10µA | 12 nC @ 4.5 V | ±12V | 905 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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2SK3447TZ-E2SK3447TZ-E - SILICON N CHANNEL |
10000 | 0.38 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Ta) | 4V, 10V | 1.95Ohm @ 500mA, 10V | 2.5V @ 1mA | 4.5 nC @ 10 V | ±20V | 85 pF @ 10 V | - | 900mW (Ta) | 150°C | Through Hole |
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Таблицы данных |
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G30N02TN20V,RD(MAX)<13M@4.5V,VTH0.5V~1. |
2159 | 0.62 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 30A (Ta) | 4.5V | 13mOhm @ 20A, 4.5V | 1.2V @ 250µA | 15 nC @ 10 V | ±12V | 900 pF @ 10 V | - | 40W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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