Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSP45N20A35A, 200V, 0.065OHM, N-CHANNEL M |
1000 | 0.62 |
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Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 35A (Tc) | 10V | 65mOhm @ 17.5A, 10V | 4V @ 250µA | 152 nC @ 10 V | ±30V | 3940 pF @ 25 V | - | 175W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF7809AVTRPBFMOSFET N-CH 30V 13.3A 8SO |
413 | 1.44 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.3A (Ta) | 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 62 nC @ 5 V | ±12V | 3780 pF @ 16 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQP19N20CPOWER FIELD-EFFECT TRANSISTOR, 1 |
2000 | 0.63 |
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Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BUK9K5R1-30EXNEXPERIA BUK9K5R1 - DUAL N-CHANN |
3853 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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PSMN8R5-100ESFQNEXPERIA PSMN8R5 - NEXTPOWER 100 |
1000 | 0.63 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Ta) | 7V, 10V | 8.8mOhm @ 25A, 10V | 4V @ 1mA | 44.5 nC @ 10 V | ±20V | 3181 pF @ 50 V | - | 183W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFW550ATM40A, 100V, 0.04OHM, N-CHANNEL MO |
847 | 0.63 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDPF7N60NZTMOSFET N-CH 600V 6.5A TO220F |
5295 | 0.64 |
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Bulk | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.5A (Tc) | 10V | 1.25Ohm @ 3.25A, 10V | 5V @ 250µA | 17 nC @ 10 V | ±30V | 730 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SPD07N60S5AATMA1SPD07N60S5 - COOL MOS POWER MOSF |
3305 | 0.64 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BUK7E4R6-60E,127NEXPERIA BUK7E4 - TRANSISTOR >30 |
2920 | 0.64 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 4.6mOhm @ 25A, 10V | 4V @ 1mA | 82 nC @ 10 V | ±20V | 6230 pF @ 25 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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2SK3278-E2SK3278 - N-CHANNEL SILICON MOSF |
1998 | 0.64 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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SPU02N60S5XKSPU02N60 - 600V COOLMOS N-CHANNE |
1493 | 0.64 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPD180N10N3GATMA1MOSFET N-CH 100V 43A TO252-3 |
620 | 1.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF60B217TRENCH 40<-<100V |
4342 | 0.65 |
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Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 6V, 10V | 9mOhm @ 36A, 10V | 3.7V @ 50µA | 66 nC @ 10 V | ±20V | 2230 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK6607-75C,118MOSFET N-CH 75V 100A D2PAK |
804 | 0.66 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 7mOhm @ 25A, 10V | 2.8V @ 1mA | 123 nC @ 10 V | ±16V | 7600 pF @ 25 V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFZ46ZSPBFIRFZ46 - 12V-300V N-CHANNEL POWE |
800 | 0.66 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR5305TRLPBFMOSFET P-CH 55V 31A DPAK |
233 | 1.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTD4N60T4TRANS MOSFET N-CH 600V 4A 3-PIN( |
7138 | 0.67 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDP7N50MOSFET N-CH 500V 7A TO220-3 |
4402 | 0.67 |
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Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQI50N06TUMOSFET N-CH 60V 50A I2PAK |
1792 | 0.67 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 22mOhm @ 25A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±25V | 1540 pF @ 25 V | - | 3.75W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTD6N40TRANS MOSFET N-CH 400V 6A 3-PIN( |
1166 | 0.67 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
Запрос котировок
