Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK9Y14-80E,115

Таблицы данных

BUK9Y14-80E,115

BUK9Y14-80E,115

MOSFET N-CH 80V 62A LFPAK56

Nexperia USA Inc.

3696 1.28
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 62A (Tc) 5V 14mOhm @ 15A, 10V 2.1V @ 1mA 28.9 nC @ 5 V ±10V 4640 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR122LDP-T1-RE3 SIR122LDP-T1-RE3

SIR122LDP-T1-RE3

N-CHANNEL 80-V (D-S) MOSFET POWE

Vishay Siliconix

3439 1.29
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 17.2A (Ta), 62.3A (Tc) 4.5V, 10V 7.35mOhm @ 15A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2380 pF @ 40 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ479EP-T1_BE3

Таблицы данных

SQJ479EP-T1_BE3

SQJ479EP-T1_BE3

P-CHANNEL 80-V (D-S) 175C MOSFET

Vishay Siliconix

2107 1.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 80 V 32A (Tc) 4.5V, 10V 33mOhm @ 10A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 4500 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR4608LDP-T1-GE3

Таблицы данных

SIR4608LDP-T1-GE3

SIR4608LDP-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix

2217 1.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 13.3A (Ta), 43.4A (Tc) 4.5V, 10V 11.5mOhm @ 10A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 905 pF @ 30 V - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4C024NT1G

Таблицы данных

NTMFS4C024NT1G

NTMFS4C024NT1G

MOSFET N-CH 30V 21.7A/78A 5DFN

onsemi

2763 1.30
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 21.7A (Ta), 78A (Tc) 4.5V, 10V 2.8mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 1972 pF @ 15 V - 2.57W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPLK70R1K2P7ATMA1

Таблицы данных

IPLK70R1K2P7ATMA1

IPLK70R1K2P7ATMA1

MOSFET N-CH 700V TDSON-8

Infineon Technologies

3166 1.28
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V - - - - - - - - - - Surface Mount
SIR4606DP-T1-GE3

Таблицы данных

SIR4606DP-T1-GE3

SIR4606DP-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix

3539 1.32
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 10.5A (Ta), 16A (Tc) 7.5V, 10V 18.5mOhm @ 4A, 10V 4V @ 250µA 13.5 nC @ 10 V ±20V 540 pF @ 30 V - 3.7W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDT4N50NZU

Таблицы данных

FDT4N50NZU

FDT4N50NZU

POWER MOSFET, N-CHANNEL, UNIFETI

onsemi

2199 1.42
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® UltraFRFET™, Unifet™ II Active N-Channel MOSFET (Metal Oxide) 500 V 2A (Tc) 10V 3Ohm @ 1A, 10V 5.5V @ 250µA 9.1 nC @ 10 V ±25V 476 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVTFS6H880NWFTAG

Таблицы данных

NVTFS6H880NWFTAG

NVTFS6H880NWFTAG

MOSFET N-CH 80V 6.3A/21A 8WDFN

onsemi

2378 0.83
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta), 21A (Tc) 10V 32mOhm @ 5A, 10V 4V @ 20µA 6.9 nC @ 10 V ±20V 370 pF @ 40 V - 3.1W (Ta), 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPC8132,LQ(S

Таблицы данных

TPC8132,LQ(S

TPC8132,LQ(S

MOSFET P-CH 40V 7A 8SOP

Toshiba Semiconductor and Storage

3292 0.92
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 7A (Ta) 4.5V, 10V 25mOhm @ 3.5A, 10V 2V @ 200µA 34 nC @ 10 V +20V, -25V 1580 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
PJQ5428_R2_00001 PJQ5428_R2_00001

PJQ5428_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3328 1.43
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 130A (Tc) 4.5V, 10V 1.6mOhm @ 20A, 10V 2.5V @ 250µA 60 nC @ 4.5 V ±20V 6771 pF @ 25 V - 2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ459EP-T2_BE3

Таблицы данных

SQJ459EP-T2_BE3

SQJ459EP-T2_BE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

2762 1.34
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 52A (Tc) 4.5V, 10V 18mOhm @ 3.5A, 10V 2.5V @ 250µA 108 nC @ 10 V ±20V 4586 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ459EP-T2_GE3

Таблицы данных

SQJ459EP-T2_GE3

SQJ459EP-T2_GE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

3828 1.34
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 52A (Tc) 4.5V, 10V 18mOhm @ 3.5A, 10V 2.5V @ 250µA 108 nC @ 10 V ±20V 4586 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK4002DPD-00#J2

Таблицы данных

RJK4002DPD-00#J2

RJK4002DPD-00#J2

MOSFET N-CH 400V 3A MP3A

Renesas Electronics America Inc

2854 0.61
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 3A (Ta) 10V 2.9Ohm @ 1.5A, 10V - 6 nC @ 10 V ±30V 165 pF @ 25 V - 30W (Tc) 150°C (TJ) Surface Mount
HUFA76419S3ST

Таблицы данных

HUFA76419S3ST

HUFA76419S3ST

MOSFET N-CH 60V 29A D2PAK

Fairchild Semiconductor

2784 0.00
- +

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Расследования

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V 3V @ 250µA 28 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7470PBF

Таблицы данных

IRF7470PBF

IRF7470PBF

MOSFET N-CH 40V 10A 8SO

International Rectifier

3360 0.36
- +

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Расследования

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 2.8V, 10V 13mOhm @ 10A, 10V 2V @ 250µA 44 nC @ 4.5 V ±12V 3430 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUZ73AE3046

Таблицы данных

BUZ73AE3046

BUZ73AE3046

N-CHANNEL POWER MOSFET

Infineon Technologies

2447 0.00
- +

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Расследования

Bulk * Active - - - - - - - - - - - - - -
FDMS8020

Таблицы данных

FDMS8020

FDMS8020

MOSFET N-CH 30V 26A/42A 8PQFN

onsemi

6000 1.45
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 42A (Tc) 4.5V, 10V 2.5mOhm @ 26A, 10V 3V @ 250µA 61 nC @ 10 V ±20V 3800 pF @ 15 V - 2.5W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD100N04_L2_00001 PJD100N04_L2_00001

PJD100N04_L2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2156 1.45
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 17A (Ta), 100A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 4.5 V ±20V 5214 pF @ 25 V - 2W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NP45N06VDK-E1-AY

Таблицы данных

NP45N06VDK-E1-AY

NP45N06VDK-E1-AY

MOSFET N-CH 60V 45A TO252

Renesas Electronics America Inc

3438 1.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 11.6mOhm @ 23A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 2300 pF @ 25 V - 1.2W (Ta), 75W (Tc) 175°C Surface Mount
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