Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SQJA80EP-T1_BE3N-CHANNEL 80-V (D-S) 175C MOSFET |
2169 | 1.39 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 4.5V, 10V | 7mOhm @ 10A, 10V | 2.5V @ 250µA | 75 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJ459EP-T1_BE3P-CHANNEL 60-V (D-S) 175C MOSFET |
2044 | 1.39 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 52A (Tc) | 4.5V, 10V | 18mOhm @ 3.5A, 10V | 2.5V @ 250µA | 108 nC @ 10 V | ±20V | 4586 pF @ 30 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PJD4NA90_L2_00001900V N-CHANNEL MOSFET |
3714 | 1.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 4A (Ta) | 10V | 3.4Ohm @ 2A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 710 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR7746PBFHEXFET POWER MOSFET |
2440 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR7746PBF-INFMOSFET N-CH 75V 56A DPAK |
3056 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | - | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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ISZ230N10NM6ATMA1TRENCH >=100V PG-TSDSON-8 |
3960 | 1.44 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Ta), 31A (Tc) | 8V, 10V | 23mOhm @ 10A, 10V | 3.3V @ 13µA | 9.3 nC @ 10 V | ±20V | 690 pF @ 50 V | - | 3W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NTMFS4C06NBT1GMOSFET N-CH 30V 20A/69A 5DFN |
2634 | 1.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 69A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.1V @ 250µA | 26 nC @ 10 V | ±20V | 1683 pF @ 15 V | - | 2.55W (Ta), 30.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RM50N150DFMOSFET N-CHANNEL 150V 50A 8DFN |
3288 | 0.64 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 10V | 19mOhm @ 30A, 10V | 4.5V @ 250µA | - | ±20V | 5200 pF @ 50 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVTFS6H880NLWFTAGMOSFET N-CH 80V 6.6A/22A 8WDFN |
2539 | 0.89 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 6.6A (Ta), 22A (Tc) | 4.5V, 10V | 29mOhm @ 5A, 10V | 2V @ 20µA | 9 nC @ 10 V | ±20V | 431 pF @ 40 V | - | 3.1W (Ta), 33W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0659DPA-00#J5AMOSFET N-CH 60V 30A 8WPAK |
2831 | 0.64 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Ta) | 10V | 8mOhm @ 15A, 10V | - | 30.6 nC @ 10 V | ±20V | 2400 pF @ 10 V | - | 55W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RQ6L035ATTCRPCH -60V -3.5A POWER MOSFET - RQ |
2536 | 0.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.5A (Ta) | 4.5V, 10V | 78mOhm @ 3.5A, 10V | 2.5V @ 1mA | 22 nC @ 10 V | ±20V | 1190 pF @ 30 V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount |
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SISS588DN-T1-GE3N-CHANNEL 80 V (D-S) MOSFET POWE |
2190 | 1.42 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16.9A (Ta), 58.1A (Tc) | 7.5V, 10V | 8mOhm @ 10A, 10V | 4V @ 250µA | 28.5 nC @ 10 V | ±20V | 1380 pF @ 40 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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ISC0803NLSATMA1MOSFET N-CH 100V 8.8A/37A 8TDSON |
3341 | 1.47 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.8A (Ta), 37A (Tc) | 4.5V, 10V | 16.9mOhm @ 20A, 10V | 2.3V @ 18µA | 15 nC @ 10 V | ±20V | 1000 pF @ 50 V | - | 2.5W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RM100N65DFMOSFET N-CHANNEL 65V 100A 8DFN |
2135 | 0.65 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 65 V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.5V @ 250µA | - | +20V, -12V | 9500 pF @ 25 V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RM052N100DFMOSFET N-CHANNEL 100V 70A 8DFN |
2651 | 0.65 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | - | +20V, -12V | 9100 pF @ 25 V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR2908PBFHEXFET POWER MOSFET |
2849 | 0.39 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33 nC @ 4.5 V | ±16V | 1890 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFU3806PBFMOSFET N-CH 60V 43A IPAK |
2293 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | - | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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PJD40N15_L2_00001150V N-CHANNEL ENHANCEMENT MODE |
2920 | 1.54 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Ta), 40A (Tc) | 10V | 35mOhm @ 20A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±20V | 2207 pF @ 75 V | - | 2W (Ta), 131W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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PJD60R620E_L2_00001600V N-CHANNEL SUPER JUNCTION MO |
3720 | 1.54 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.2A (Ta), 7A (Tc) | 10V | 620mOhm @ 2.4A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±20V | 457 pF @ 25 V | - | 2W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJ858AEP-T1_BE3MOSFET N-CH 40V 58A PPAK SO-8 |
3839 | 1.44 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Tc) | - | 6.3mOhm @ 14A, 10V | 2.5V @ 250µA | 55 nC @ 10 V | ±20V | 2450 pF @ 20 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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