Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMNR70-30YLHX

Таблицы данных

PSMNR70-30YLHX

PSMNR70-30YLHX

MOSFET N-CH 30V 300A LFPAK56

Nexperia USA Inc.

3195 3.14
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 300A (Tj) - - - 80 nC @ 10 V - - Schottky Diode (Body) - 175°C (TJ) Surface Mount
SIHB10N40D-GE3

Таблицы данных

SIHB10N40D-GE3

SIHB10N40D-GE3

MOSFET N-CH 400V 10A TO263

Vishay Siliconix

3341 1.79
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL260N4F7

Таблицы данных

STL260N4F7

STL260N4F7

MOSFET N-CH 40V 120A POWERFLAT

STMicroelectronics

3119 2.99
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.1mOhm @ 24A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 5000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJQ100EL-T1_GE3

Таблицы данных

SQJQ100EL-T1_GE3

SQJQ100EL-T1_GE3

MOSFET N-CH 40V 200A PPAK 8 X 8

Vishay Siliconix

3570 3.17
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.5V @ 250µA 220 nC @ 10 V ±20V 14500 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP126N10N3GXKSA1

Таблицы данных

IPP126N10N3GXKSA1

IPP126N10N3GXKSA1

MOSFET N-CH 100V 58A TO220-3

Infineon Technologies

2174 1.80
- +

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Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 6V, 10V 12.3mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVMJS1D5N04CLTWG

Таблицы данных

NVMJS1D5N04CLTWG

NVMJS1D5N04CLTWG

MOSFET N-CH 40V 38A/200A 8LFPAK

onsemi

2495 3.08
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 130µA 70 nC @ 10 V ±20V 4300 pF @ 20 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC120N04S6N009ATMA1

Таблицы данных

IAUC120N04S6N009ATMA1

IAUC120N04S6N009ATMA1

MOSFET N-CH 40V 120A 8TDSON-33

Infineon Technologies

3765 3.14
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 7V, 10V 0.9mOhm @ 60A, 10V 3.4V @ 90µA 115 nC @ 10 V ±20V 7360 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD18510KTT

Таблицы данных

CSD18510KTT

CSD18510KTT

MOSFET N-CH 40V 274A DDPAK

Texas Instruments

3339 2.62
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 274A (Tc) 4.5V, 10V 1.7mOhm @ 100A, 10V 2.3V @ 250µA 153 nC @ 10 V ±20V 11400 pF @ 20 V - 250W (Ta) -55°C ~ 175°C (TJ) Surface Mount
STU3N62K3

Таблицы данных

STU3N62K3

STU3N62K3

MOSFET N-CH 620V 2.7A IPAK

STMicroelectronics

3712 1.56
- +

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Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 2.7A (Tc) 10V 2.5Ohm @ 1.4A, 10V 4.5V @ 50µA 13 nC @ 10 V ±30V 385 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IRFU310PBF

Таблицы данных

IRFU310PBF

IRFU310PBF

MOSFET N-CH 400V 1.7A TO251AA

Vishay Siliconix

3400 1.56
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD224PBF

Таблицы данных

IRFD224PBF

IRFD224PBF

MOSFET N-CH 250V 630MA 4DIP

Vishay Siliconix

2985 1.56
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 630mA (Ta) 10V 1.1Ohm @ 380mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFS7537TRLPBF

Таблицы данных

IRFS7537TRLPBF

IRFS7537TRLPBF

MOSFET N-CH 60V 173A D2PAK

Infineon Technologies

2724 2.64
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB155N3LH6

Таблицы данных

STB155N3LH6

STB155N3LH6

MOSFET N-CH 30V 80A D2PAK

STMicroelectronics

2934 2.90
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® DeepGATE™, STripFET™ VI Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 5V, 10V 3mOhm @ 40A, 10V 2.5V @ 250µA 80 nC @ 5 V ±20V 3800 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHP18NQ10T,127

Таблицы данных

PHP18NQ10T,127

PHP18NQ10T,127

MOSFET N-CH 100V 18A TO220AB

Nexperia USA Inc.

2666 1.57
- +

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Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 633 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU320PBF

Таблицы данных

IRFU320PBF

IRFU320PBF

MOSFET N-CH 400V 3.1A TO251AA

Vishay Siliconix

1499 1.58
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF8302MTRPBF

Таблицы данных

IRF8302MTRPBF

IRF8302MTRPBF

MOSFET N-CH 30V 31A DIRECTFET

Infineon Technologies

3157 3.20
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 190A (Tc) 4.5V, 10V 1.8mOhm @ 31A, 10V 2.35V @ 150µA 53 nC @ 4.5 V ±20V 6030 pF @ 15 V - 2.8W (Ta), 104W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF840ASTRLPBF

Таблицы данных

IRF840ASTRLPBF

IRF840ASTRLPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

3785 2.67
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL60R365P7AUMA1

Таблицы данных

IPL60R365P7AUMA1

IPL60R365P7AUMA1

MOSFET N-CH 600V 10A 4VSON

Infineon Technologies

31553 3.21
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 365mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 46W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPA50R380CEXKSA2

Таблицы данных

IPA50R380CEXKSA2

IPA50R380CEXKSA2

MOSFET N-CH 500V 6.3A TO220

Infineon Technologies

2145 1.59
- +

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Расследования

Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 6.3A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V - 29.2W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFZ14SPBF

Таблицы данных

IRFZ14SPBF

IRFZ14SPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix

3456 1.59
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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