Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRF1404ZMOSFET N-CH 40V 160A TO220AB |
3800 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP076N12N3GXKSA1MOSFET N-CH 120V 100A TO220-3 |
3977 | 3.90 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 7.6mOhm @ 100A, 10V | 4V @ 130µA | 101 nC @ 10 V | ±20V | 6640 pF @ 60 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STB25N80K5MOSFET N-CH 800V 19.5A D2PAK |
2483 | 6.62 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BTS282ZE3180AATMA2MOSFET N-CH 49V 80A TO263-7 |
2484 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | TEMPFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 49 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | ±20V | 4800 pF @ 25 V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB60R125C6ATMA1MOSFET N-CH 600V 30A D2PAK |
2970 | 7.30 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96 nC @ 10 V | ±20V | 2127 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TK17A80W,S4XMOSFET N-CH 800V 17A TO220SIS |
2675 | 4.02 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32 nC @ 10 V | ±20V | 2050 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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TK100A06N1,S4XMOSFET N-CH 60V 100A TO220SIS |
3401 | 2.87 |
ДобавитьРасследования |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 2.7mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 10500 pF @ 30 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFSL3207ZPBFMOSFET N-CH 75V 120A TO262 |
2092 | 4.03 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF40SC240ARMA1MOSFET N-CH 40V 360A TO263-7 |
2259 | 4.59 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 360A (Tc) | 6V, 10V | 0.65mOhm @ 100A, 10V | 3.7V @ 250µA | 458 nC @ 10 V | ±20V | 18000 pF @ 20 V | - | 2.4W (Ta), 417W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STP80NF10MOSFET N-CH 100V 80A TO220AB |
3017 | 4.04 |
ДобавитьРасследования |
Tube | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 15mOhm @ 40A, 10V | 4V @ 250µA | 182 nC @ 10 V | ±20V | 5500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IAUT300N08S5N012ATMA2MOSFET N-CH 80V 300A 8HSOF |
2310 | 7.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 275µA | 231 nC @ 10 V | ±20V | 16250 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STB42N60M2-EPMOSFET N-CH 600V 34A D2PAK |
2499 | 6.75 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M2-EP | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 87mOhm @ 17A, 10V | 4.75V @ 250µA | 55 nC @ 10 V | ±25V | 2370 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRL1404ZPBFMOSFET N-CH 40V 75A TO220AB |
3566 | 2.90 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPW80R360P7XKSA1MOSFET N-CH 800V 13A TO247-3 |
2333 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30 nC @ 10 V | ±20V | 930 pF @ 500 V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFZ40PBFMOSFET N-CH 60V 50A TO220AB |
200 | 2.91 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB4310PBFMOSFET N-CH 100V 130A TO220AB |
2966 | 4.10 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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HUF75344G3MOSFET N-CH 55V 75A TO247-3 |
3831 | 4.10 |
ДобавитьРасследования |
Bulk,Tube | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP48N20TMOSFET N-CH 200V 48A TO220AB |
2258 | 4.10 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 48A (Tc) | 10V | 50mOhm @ 24A, 10V | 4.5V @ 250µA | 60 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB23N60E-GE3MOSFET N-CH 600V 23A D2PAK |
3653 | 4.11 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±30V | 2418 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP80NF55-06MOSFET N-CH 55V 80A TO220AB |
3796 | 4.11 |
ДобавитьРасследования |
Tube | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 189 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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