Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SCT3120ALGC11

Таблицы данных

SCT3120ALGC11

SCT3120ALGC11

SICFET N-CH 650V 21A TO247N

Rohm Semiconductor

3901 9.58
- +

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Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 18V 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 103W (Tc) 175°C (TJ) Through Hole
SCT3060ALGC11

Таблицы данных

SCT3060ALGC11

SCT3060ALGC11

SICFET N-CH 650V 39A TO247N

Rohm Semiconductor

3689 14.86
- +

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Расследования

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W (Tc) 175°C (TJ) Through Hole
SCT3080ALHRC11

Таблицы данных

SCT3080ALHRC11

SCT3080ALHRC11

SICFET N-CH 650V 30A TO247N

Rohm Semiconductor

2741 22.09
- +

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Расследования

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) Through Hole
SCT2080KEHRC11

Таблицы данных

SCT2080KEHRC11

SCT2080KEHRC11

SICFET N-CH 1200V 40A TO247N

Rohm Semiconductor

2638 41.78
- +

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Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 2080 pF @ 800 V - - 175°C (TJ) Through Hole
SCT3022ALHRC11

Таблицы данных

SCT3022ALHRC11

SCT3022ALHRC11

SICFET N-CH 650V 93A TO247N

Rohm Semiconductor

2969 76.37
- +

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Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 93A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 133 nC @ 18 V +22V, -4V 2208 pF @ 500 V - 339W 175°C (TJ) Through Hole
SCT3022KLHRC11

Таблицы данных

SCT3022KLHRC11

SCT3022KLHRC11

SICFET N-CH 1200V 95A TO247N

Rohm Semiconductor

2931 138.93
- +

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Расследования

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 95A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 178 nC @ 18 V +22V, -4V 2879 pF @ 800 V - 427W 175°C (TJ) Through Hole
BSS138-7-F

Таблицы данных

BSS138-7-F

BSS138-7-F

MOSFET N-CH 50V 200MA SOT23-3

Diodes Incorporated

3748 0.23
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002K-7

Таблицы данных

2N7002K-7

2N7002K-7

MOSFET N-CH 60V 380MA SOT23-3

Diodes Incorporated

3947 0.24
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 380mA (Ta) 5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 1mA 0.3 nC @ 4.5 V ±20V 50 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84-7-F

Таблицы данных

BSS84-7-F

BSS84-7-F

MOSFET P-CH 50V 130MA SOT23-3

Diodes Incorporated

2492 0.27
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V 10Ohm @ 100mA, 5V 2V @ 1mA - ±20V 45 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002BK,215

Таблицы данных

2N7002BK,215

2N7002BK,215

MOSFET N-CH 60V 350MA TO236AB

Nexperia USA Inc.

279780 0.27
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 10V 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 50 pF @ 10 V - 370mW (Ta) 150°C (TJ) Surface Mount
BSS138LT3G

Таблицы данных

BSS138LT3G

BSS138LT3G

MOSFET N-CH 50V 200MA SOT23-3

onsemi

400000 0.36
- +

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Расследования

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 5V 3.5Ohm @ 200mA, 5V 1.5V @ 1mA - ±20V 50 pF @ 25 V - 225mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN3731U-7

Таблицы данных

DMN3731U-7

DMN3731U-7

MOSFET N-CH 30V 900MA SOT23

Diodes Incorporated

2619 0.27
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 900mA (Ta) 1.8V, 4.5V 460mOhm @ 200mA, 4.5V 0.95V @ 250µA 5.5 nC @ 4.5 V ±8V 73 pF @ 25 V - 400mW -55°C ~ 150°C (TJ) Surface Mount
DMN67D7L-7

Таблицы данных

DMN67D7L-7

DMN67D7L-7

MOSFET N-CH 60V 210MA SOT23-3

Diodes Incorporated

3620 0.28
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 210mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA 0.821 nC @ 10 V ±40V 22 pF @ 25 V - 570mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMZ290UNE2YL

Таблицы данных

PMZ290UNE2YL

PMZ290UNE2YL

MOSFET N-CH 20V 1.2A DFN1006-3

Nexperia USA Inc.

2243 0.41
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 1.5V, 4.5V 320mOhm @ 1.2A, 4.5V 950mV @ 250µA 1.4 nC @ 4.5 V ±8V 46 pF @ 10 V - 350mW (Ta), 5.43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002,215

Таблицы данных

2N7002,215

2N7002,215

MOSFET N-CH 60V 300MA TO236AB

Nexperia USA Inc.

2356 0.31
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA - ±30V 50 pF @ 10 V - 830mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
2N7002K-T1-GE3

Таблицы данных

2N7002K-T1-GE3

2N7002K-T1-GE3

MOSFET N-CH 60V 300MA TO236

Vishay Siliconix

3049 0.31
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 30 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138PW,115

Таблицы данных

BSS138PW,115

BSS138PW,115

MOSFET N-CH 60V 320MA SOT323

Nexperia USA Inc.

2178 0.31
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 320mA (Ta) 10V 1.6Ohm @ 300mA, 10V 1.5V @ 250µA 0.8 nC @ 4.5 V ±20V 50 pF @ 10 V - 260mW (Ta), 830mW (Tc) -55°C ~ 150°C (TA) Surface Mount
NX3008NBK,215

Таблицы данных

NX3008NBK,215

NX3008NBK,215

MOSFET N-CH 30V 400MA TO236AB

Nexperia USA Inc.

3744 0.31
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 400mA (Tc) 1.8V, 4.5V 1.4Ohm @ 350mA, 4.5V 1.1V @ 250µA 0.68 nC @ 4.5 V ±8V 50 pF @ 15 V - 350mW (Ta), 1.14W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMG2305UX-13

Таблицы данных

DMG2305UX-13

DMG2305UX-13

MOSFET P-CH 20V 4.2A SOT23

Diodes Incorporated

2185 0.43
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.8V, 4.5V 52mOhm @ 4.2A, 4.5V 900mV @ 250µA 10.2 nC @ 4.5 V ±8V 808 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP3099L-13

Таблицы данных

DMP3099L-13

DMP3099L-13

MOSFET P-CH 30V 3.8A SOT23

Diodes Incorporated

3693 0.37
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 30 V 3.8A (Ta) 4.5V, 10V 65mOhm @ 3.8A, 10V 2.1V @ 250µA 5.2 nC @ 4.5 V ±20V 563 pF @ 25 V - 1.08W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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