Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK2498-AZ2SK2498 - SWITCHING N-CHANNEL PO |
414 | 3.27 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Ta) | 4V, 10V | 9mOhm @ 25A, 10V | 2V @ 1mA | 152 nC @ 10 V | ±20V | 3400 pF @ 10 V | - | 2W (Ta), 35W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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2N6787POWER FIELD-EFFECT TRANSISTOR, N |
943 | 3.31 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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SPA20N65C3XKSPA20N65 - 650V AND 700V COOLMOS |
165 | 3.32 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH190N65F-F085MOSFET N-CH 650V 20.6A TO247-3 |
294 | 3.33 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.6A (Tc) | 10V | 190mOhm @ 27A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±20V | 3181 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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EMB1426QMME/NOPBEMB1426 - HALF BRIDGE BASED MOSF |
500 | 3.43 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
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2SK3354-AZ2SK3354-AZ - SWITCHING N-CHANNEL |
946 | 3.45 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 83A (Tc) | 4V, 10V | 8mOhm @ 42A, 10V | 2.5V @ 1mA | 106 nC @ 10 V | ±20V | 6300 pF @ 10 V | - | 1.5W (Ta), 100W (Tc) | 150°C | Through Hole |
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2SK3357-A2SK3357 - N-CHANNEL POWER MOSFET |
294 | 3.72 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Ta) | 4V, 10V | 5.8mOhm @ 38A, 10V | 2.5V @ 1mA | 170 nC @ 10 V | ±20V | 9800 pF @ 10 V | - | 3W (Ta), 150W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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IAUA250N04S6N007AUMA1MOSFET_(20V 40V) PG-HSOF-5 |
2769 | 3.73 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 435A (Tj) | 7V, 10V | 0.7mOhm @ 100A, 10V | 3V @ 130µA | 151 nC @ 10 V | ±20V | 9898 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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P3M06120K3SICFET N-CH 650V 27A TO-247-3 |
3935 | 9.05 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 27A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA | - | +20V, -8V | - | - | 131W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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P3M06120K4SICFET N-CH 650V 27A TO-247-4 |
2662 | 9.05 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 27A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA | - | +20V, -8V | - | - | 131W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPZ65R095C7IPZ65R095 - 650V AND 700V COOLMO |
410 | 4.25 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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2N6847POWER FIELD-EFFECT TRANSISTOR, P |
186 | 4.34 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRFP2907AUIRFP2907 - 75V-100V N-CHANNEL |
450 | 4.35 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 90A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620 nC @ 10 V | ±20V | 13000 pF @ 25 V | - | 470W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDP039N08B-F102MOSFET N-CH 80V 120A TO220-3 |
399 | 4.39 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 4.5V @ 250µA | 133 nC @ 10 V | ±20V | 9450 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SPB11N60C3ATMA1MOSFET N-CH 650V 11A TO263-3 |
2029 | 4.59 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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P3M06060T3SICFET N-CH 650V 46A TO220-3 |
2150 | 10.38 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | - | +20V, -8V | - | - | 170W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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P3M06060K3SICFET N-CH 650V 48A TO247-3 |
2150 | 10.38 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | - | +20V, -8V | - | - | 188W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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P3M06060K4SICFET N-CH 650V 48A TO247-4 |
3790 | 10.38 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | - | +20V, -8V | - | - | 188W | -55°C ~ 175°C (TJ) | Through Hole |
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NP110N055PUJ-E1B-AYNP110N055PUJ-E1B-AY - SWITCHINGN |
1000 | 5.51 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 2.4mOhm @ 55A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 14250 pF @ 25 V | - | 1.8W (Ta), 288W (Tc) | 175°C | Surface Mount |
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Таблицы данных |
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P3M06040K3SICFET N-CH 650V 68A TO247-3 |
138 | 12.17 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 68A | 15V | 50mOhm @ 40A, 15V | 2.4V @ 7.5mA (Typ) | - | +20V, -8V | - | - | 254W | -55°C ~ 175°C (TJ) | Through Hole |
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