Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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P3M171K0G7SICFET N-CH 1700V 7A TO-263-7 |
100 | 6.10 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 7A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | - | +19V, -8V | - | - | 100W | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCH041N65EFL4POWER FIELD-EFFECT TRANSISTOR, N |
232 | 7.45 |
ДобавитьРасследования |
Bulk | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298 nC @ 10 V | ±20V | 12560 pF @ 100 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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UJ4C075060B7S750V/60MOHM, N-OFF SIC CASCODE |
3715 | 50.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 25.8A (Tc) | 12V | 74mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1420 pF @ 400 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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FCH041N65F-F085MOSFET N-CH 650V 76A TO247-3 |
207 | 9.24 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 304 nC @ 10 V | ±20V | 13566 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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UJ4C075033B7S750V/33MOHM, N-OFF SIC CASCODE |
2063 | 50.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tc) | 12V | 41mOhm @ 30A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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P3M12040K3SICFET N-CH 1200V 63A TO-247-3 |
2962 | 20.98 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A | 15V | 48mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | - | +21V, -8V | - | - | 349W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF350MOSFET N-CH 400V 14A TO3 |
2705 | 23.19 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 14A (Tc) | 10V | 400mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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P3M12025K4SICFET N-CH 1200V 112A TO-247-4 |
2623 | 28.74 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 112A | 15V | 35mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | - | +19V, -8V | - | - | 577W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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P3M07013K4SICFET N-CH 750V 140A TO-247-4 |
2423 | 33.90 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 140A | 15V | 16mOhm @ 75A, 15V | 2.2V @ 75mA (Typ) | - | +19V, -8V | - | - | 428W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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P3M17040K4SICFET N-CH 1700V 73A TO-247-4 |
3811 | 35.86 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 73A | 15V | 60mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | - | +19V, -8V | - | - | 536W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IV1Q12050T3SIC MOSFET, 1200V 50MOHM, TO-247 |
3877 | 39.28 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2770 pF @ 800 V | - | 327W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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UJ4SC075009B7S750V/9MOHM, N-OFF SIC STACK CASC |
2214 | 41.61 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 106A (Tc) | 12V | 11.5mOhm @ 70A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3340 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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6BP16-26BP16 - 16 CHAN BP W RS-232 |
2311 | 488.16 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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EPC8002GANFET N-CH 65V 2A DIE |
2065 | 3.26 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 65 V | 2A (Ta) | 5V | 530mOhm @ 500mA, 5V | 2.5V @ 250µA | - | +6V, -4V | 21 pF @ 32.5 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
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EPC2059TRANS GAN 170V DIE .009OHM |
3434 | 3.61 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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EPC2066TRANSISTOR GAN 40V .001OHM |
13137 | 6.54 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 90A (Ta) | 5V | 1.1mOhm @ 50A, 5V | 2.5V @ 28mA | 33 nC @ 5 V | +6V, -4V | 4523 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SCT2H12NYTBSICFET N-CH 1700V 4A TO268 |
2975 | 6.96 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4A (Tc) | 18V | 1.5Ohm @ 1.1A, 18V | 4V @ 410µA | 14 nC @ 18 V | +22V, -6V | 184 pF @ 800 V | - | 44W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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EPC2302TRANS GAN 100V DIE .0019OHM |
2571 | 7.15 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 101A (Ta) | 5V | 1.8mOhm @ 50A, 5V | 2.5V @ 14mA | 23 nC @ 5 V | +6V, -4V | 3200 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SCT3160KW7TLSICFET N-CH 1200V 17A TO263-7 |
3930 | 11.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | - | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | 100W | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SCT2H12NZGC11SICFET N-CH 1700V 3.7A TO3PFM |
3938 | 7.85 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 3.7A (Tc) | 18V | 1.5Ohm @ 1.1A, 18V | 4V @ 900µA | 14 nC @ 18 V | +22V, -6V | 184 pF @ 800 V | - | 35W (Tc) | 175°C (TJ) | Through Hole |
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