Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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BSC005N03LS5IATMA1TRENCH <= 40V |
2616 | 3.09 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Ta), 433A (Tc) | 4.5V, 10V | 0.55mOhm @ 50A, 10V | 2V @ 10mA | 128 nC @ 10 V | ±20V | 8000 pF @ 15 V | - | 3W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCPF7N60YDTUMOSFET N-CH 600V 7A TO220F-3 |
3952 | 1.01 |
ДобавитьРасследования |
Bulk | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 920 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BXL4004-1EBXL4004 - N-CHANNEL POWER MOSFET |
500 | 1.02 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 3.9mOhm @ 50A, 10V | - | 140 nC @ 10 V | ±20V | 8200 pF @ 20 V | - | 75W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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FDB8870MOSFET N-CH 30V 23A/160A TO263AB |
800 | 1.03 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta), 160A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 132 nC @ 10 V | ±20V | 5200 pF @ 15 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS52N15DTRLPMOSFET N-CH 150V 51A D2PAK |
250 | 3.22 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 51A (Tc) | 10V | 32mOhm @ 36A, 10V | 5V @ 250µA | 89 nC @ 10 V | ±30V | 2770 pF @ 25 V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN070-200P,127NEXPERIA PSMN070-200P - 35A, 200 |
8812 | 1.04 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 35A (Tc) | 10V | 70mOhm @ 17A, 10V | 4V @ 1mA | 77 nC @ 10 V | ±20V | 4570 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRF3315SAUIRF3315 - 120V-300V N-CHANNEL |
4720 | 1.04 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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2SK3415LS2SK3415LS - MOSFET 40A, 60V, 0. |
3378 | 1.04 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BSC070N10NS5SCATMA1MOSFET N-CH 100V 14A/82A 8SWSON |
3562 | 3.22 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 82A (Tc) | 6V, 10V | 7mOhm @ 40A, 10V | 3.8V @ 50µA | 38 nC @ 10 V | ±20V | 2700 pF @ 50 V | - | 3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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2SK3415LS2SK3415LS - MOSFET 40A, 60V, 0. |
2000 | 1.04 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NTP6413ANGPOWER MOSFET 100V 42A, SINGLE N- |
1085 | 1.04 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 28mOhm @ 42A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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2SK14302SK1430 - 10A, 100V, 0.16OHM, N- |
717 | 1.04 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FQPF2N80YDTUMOSFET N-CH 800V 1.5A TO220F-3 |
725 | 1.05 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.5A (Tc) | 10V | 6.3Ohm @ 750mA, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB90N06S4L04ATMA2MOSFET N-CH 60V 90A TO263-3 |
2509 | 3.31 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170 nC @ 10 V | ±16V | 13000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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UPA2706GR-E1-AUPA2706GR-E1-A - MOS FIELD EFFEC |
10000 | 1.06 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 20A (Tc) | 4V, 10V | 15mOhm @ 5.5A, 10V | 2.5V @ 1mA | 7.1 nC @ 5 V | ±20V | 660 pF @ 10 V | - | 3W (Ta), 15W (Tc) | 150°C | Surface Mount |
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Таблицы данных |
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AUIRLU3114ZAUIRLU3114Z - 20V-40V N-CHANNEL |
3631 | 1.06 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDI9409-F085FDI9409 - N-CHANNEL POWERTRENCH |
1600 | 1.06 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2980 pF @ 25 V | - | 94W (Tj) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA65R420CFDIPA65R420 - 650V AND 700V COOLMO |
975 | 1.06 |
ДобавитьРасследования |
Bulk | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCI7N60MOSFET N-CH 600V 7A I2PAK |
398 | 1.06 |
ДобавитьРасследования |
Bulk | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 920 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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UPA2706GR-E1-ATUPA2706GR-E1-AT - MOS FIELD EFFE |
7500 | 1.07 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 20A (Tc) | 4V, 10V | 15mOhm @ 5.5A, 10V | 2.5V @ 1mA | 7.1 nC @ 5 V | ±20V | 660 pF @ 10 V | - | 3W (Ta), 15W (Tc) | 150°C | Surface Mount |
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