Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRFR3504ZAUIRFR3504 - 20V-40V N-CHANNEL A |
6989 | 0.82 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB034N06L3GATMA1MOSFET N-CH 60V 90A D2PAK |
2381 | 2.20 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.4mOhm @ 90A, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | ±20V | 13000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF3205ZSTRLPBFMOSFET N-CH 55V 75A D2PAK |
288 | 2.21 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN2R8-40BS,118MOSFET N-CH 40V 100A D2PAK |
6867 | 0.83 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.9mOhm @ 10A, 10V | 4V @ 1mA | 71 nC @ 10 V | ±20V | 4491 pF @ 20 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB65R600C6ATMA1IPB65R600 - 650V AND 700V COOLMO |
5500 | 0.83 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PHP45NQ10T,127NEXPERIA PHP45NQ10T - 47A, 100V |
5250 | 5250.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 10V | 25mOhm @ 25A, 10V | 4V @ 1mA | 61 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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IRF6637TRPBFIRF6637 - 12V-300V N-CHANNEL POW |
5204 | 0.83 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 59A (Tc) | 4.5V, 10V | 7.7mOhm @ 14A, 10V | 2.35V @ 250µA | 17 nC @ 4.5 V | ±20V | 1330 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2SJ2542SJ254 - P-CHANNEL MOS SILICON F |
4100 | 0.83 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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2SJ589LS2SJ589 - LARGE-SIGNAL POWER MOSF |
4000 | 0.83 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FCP25N60N-F102MOSFET N-CH 600V 25A TO220-3 |
581 | 2.82 |
ДобавитьРасследования |
Bulk | SupreMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 3352 pF @ 100 V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFS4115-7PAUIRFS4115 - 120V-300V N-CHANNEL |
323 | 2.89 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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GPI65015TOGANFET N-CH 650V 15A TO220 |
3285 | 7.50 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A | 6V | - | 1.2V @ 3.5mA | 3.3 nC @ 6 V | +7.5V, -12V | 123 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCI25N60N-F102MOSFET N-CH 600V 25A I2PAK |
787 | 2.94 |
ДобавитьРасследования |
Bulk | SupreMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 3352 pF @ 100 V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RE1C002UNTCLMOSFET N-CH 20V 200MA EMT3F |
3942 | 0.25 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.2V, 2.5V | 1.2Ohm @ 100mA, 2.5V | 1V @ 1mA | - | ±8V | 25 pF @ 10 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2N7002ET1GMOSFET N-CH 60V 260MA SOT23-3 |
2568 | 0.25 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 260mA (Ta) | 4.5V, 10V | 2.5Ohm @ 240mA, 10V | 2.5V @ 250µA | 0.81 nC @ 5 V | ±20V | 26.7 pF @ 25 V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSS138K-13MOSFET N-CH 50V 310MA SOT23 |
3012 | 0.34 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 310mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 250µA | 0.95 nC @ 10 V | ±20V | 23.2 pF @ 25 V | - | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMN62D0U-13MOSFET N-CH 60V 380MA SOT23 |
3357 | 0.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 380mA (Ta) | 1.8V, 4.5V | 2Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.5 nC @ 4.5 V | ±20V | 32 pF @ 30 V | - | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFU220BTUIRFU220 - HEXFET N-CHANNEL POWER |
2232 | 0.83 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFS7762TRLPBFMOSFET N-CH 75V 85A D2PAK |
3496 | 2.22 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET®, StrongIRFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 85A (Tc) | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4440 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN2R8-40BS,118NEXPERIA PSMN2R8-40BS - 100A, 40 |
1809 | 0.83 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.9mOhm @ 10A, 10V | 4V @ 1mA | 71 nC @ 10 V | ±20V | 4491 pF @ 20 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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