Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7413ZGTRPBF

Таблицы данных

IRF7413ZGTRPBF

IRF7413ZGTRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies

2773 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 10mOhm @ 13A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1210 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7416GTRPBF

Таблицы данных

IRF7416GTRPBF

IRF7416GTRPBF

MOSFET P-CH 30V 10A 8SO

Infineon Technologies

3260 0.00
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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 20mOhm @ 5.6A, 10V 1V @ 250µA 92 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD90N06S4L03ATMA1

Таблицы данных

IPD90N06S4L03ATMA1

IPD90N06S4L03ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

3982 0.00
- +

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Расследования

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S4L05ATMA1

Таблицы данных

IPD90N06S4L05ATMA1

IPD90N06S4L05ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

2128 1.00
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Расследования

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 4.6mOhm @ 90A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N06S4L06ATMA1

Таблицы данных

IPD90N06S4L06ATMA1

IPD90N06S4L06ATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

2693 0.00
- +

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Расследования

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 6.3mOhm @ 90A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI023NE7N3 G

Таблицы данных

IPI023NE7N3 G

IPI023NE7N3 G

MOSFET N-CH 75V 120A TO262-3

Infineon Technologies

1500 2.11
- +

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Расследования

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) - 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V - 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI45N06S4L08AKSA1

Таблицы данных

IPI45N06S4L08AKSA1

IPI45N06S4L08AKSA1

MOSFET N-CH 60V 45A TO262-3

Infineon Technologies

3081 0.00
- +

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Расследования

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 8.2mOhm @ 45A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI45P03P4L11AKSA1

Таблицы данных

IPI45P03P4L11AKSA1

IPI45P03P4L11AKSA1

MOSFET P-CH 30V 45A TO262-3

Infineon Technologies

3327 0.00
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Расследования

Tube OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 11.1mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI50R199CPXKSA1

Таблицы данных

IPI50R199CPXKSA1

IPI50R199CPXKSA1

MOSFET N-CH 500V 17A TO262-3

Infineon Technologies

13987 1.33
- +

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Расследования

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R280C6XKSA1

Таблицы данных

IPI60R280C6XKSA1

IPI60R280C6XKSA1

MOSFET N-CH 600V 13.8A TO262-3

Infineon Technologies

6125 1.37
- +

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Расследования

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R380C6XKSA1

Таблицы данных

IPI60R380C6XKSA1

IPI60R380C6XKSA1

MOSFET N-CH 600V 10.6A TO262-3

Infineon Technologies

3390 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI70N10S3L12AKSA1

Таблицы данных

IPI70N10S3L12AKSA1

IPI70N10S3L12AKSA1

MOSFET N-CH 100V 70A TO262-3

Infineon Technologies

14500 0.61
- +

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Расследования

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V 2.4V @ 83µA 80 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S3H4AKSA1

Таблицы данных

IPI80N04S3H4AKSA1

IPI80N04S3H4AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

2971 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 4V @ 65µA 60 nC @ 10 V ±20V 3900 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S405AKSA1

Таблицы данных

IPI80N06S405AKSA1

IPI80N06S405AKSA1

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

2682 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 60µA 81 nC @ 10 V ±20V 6500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S407AKSA1

Таблицы данных

IPI80N06S407AKSA1

IPI80N06S407AKSA1

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

2501 1.00
- +

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Расследования

Tube,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S4L05AKSA1

Таблицы данных

IPI80N06S4L05AKSA1

IPI80N06S4L05AKSA1

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

13500 0.77
- +

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Расследования

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5.1mOhm @ 80A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S4L07AKSA1

Таблицы данных

IPI80N06S4L07AKSA1

IPI80N06S4L07AKSA1

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

2456 0.00
- +

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Расследования

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P03P4L04AKSA1

Таблицы данных

IPI80P03P4L04AKSA1

IPI80P03P4L04AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

2777 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P03P4L07AKSA1

Таблицы данных

IPI80P03P4L07AKSA1

IPI80P03P4L07AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies

2519 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 7.2mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI90N06S404AKSA1

Таблицы данных

IPI90N06S404AKSA1

IPI90N06S404AKSA1

MOSFET N-CH 60V 90A TO262-3

Infineon Technologies

2264 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
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