Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPCC8003-H(TE12LQM

Таблицы данных

TPCC8003-H(TE12LQM

TPCC8003-H(TE12LQM

MOSFET N-CH 30V 13A 8TSON

Toshiba Semiconductor and Storage

2023 0.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 16.9mOhm @ 6.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1300 pF @ 10 V - 700mW (Ta), 22W (Tc) 150°C (TJ) Surface Mount
TPCC8005-H(TE12LQM

Таблицы данных

TPCC8005-H(TE12LQM

TPCC8005-H(TE12LQM

MOSFET N-CH 30V 26A 8TSON

Toshiba Semiconductor and Storage

3436 0.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta) 4.5V, 10V 6.4mOhm @ 13A, 10V 2.3V @ 500µA 35 nC @ 10 V ±20V 2900 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCC8006-H(TE12LQM

Таблицы данных

TPCC8006-H(TE12LQM

TPCC8006-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage

3113 0.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8mOhm @ 11A, 10V 2.3V @ 200µA 27 nC @ 10 V ±20V 2200 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C (TJ) Surface Mount
TPCC8008(TE12L,QM)

Таблицы данных

TPCC8008(TE12L,QM)

TPCC8008(TE12L,QM)

MOSFET N-CH 30V 25A 8TSON

Toshiba Semiconductor and Storage

3257 0.00
- +

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Cut Tape (CT) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.8mOhm @ 12.5A, 10V 2.5V @ 1A 30 nC @ 10 V ±25V 1600 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCC8A01-H(TE12LQM

Таблицы данных

TPCC8A01-H(TE12LQM

TPCC8A01-H(TE12LQM

MOSFET N-CH 30V 21A 8TSON

Toshiba Semiconductor and Storage

2946 0.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 9.9mOhm @ 10.5A, 10V 2.3V @ 1mA 20 nC @ 10 V ±20V 1900 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCP8004(TE85L,F)

Таблицы данных

TPCP8004(TE85L,F)

TPCP8004(TE85L,F)

MOSFET N-CH 30V 8.3A PS-8

Toshiba Semiconductor and Storage

2960 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V, 10V 8.5mOhm @ 4.2A, 10V 2.5V @ 1mA 26 nC @ 10 V ±20V 1270 pF @ 10 V - 840mW (Ta) 150°C (TJ) Surface Mount
TPCP8103-H(TE85LFM

Таблицы данных

TPCP8103-H(TE85LFM

TPCP8103-H(TE85LFM

MOSFET P-CH 40V 4.8A PS-8

Toshiba Semiconductor and Storage

3960 0.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSIII-H Obsolete P-Channel MOSFET (Metal Oxide) 40 V 4.8A (Ta) 4.5V, 10V 40mOhm @ 2.4A, 10V 2V @ 1mA 19 nC @ 10 V ±20V 800 pF @ 10 V - 840mW (Ta) 150°C (TJ) Surface Mount
IXFK74N50P2

Таблицы данных

IXFK74N50P2

IXFK74N50P2

MOSFET N-CH 500V 74A TO264AA

IXYS

2920 0.00
- +

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Расследования

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 74A (Tc) 10V 77mOhm @ 500mA, 10V 5V @ 4mA 165 nC @ 10 V ±30V 9900 pF @ 25 V - 1400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX74N50P2

Таблицы данных

IXFX74N50P2

IXFX74N50P2

MOSFET N-CH 500V 74A PLUS247-3

IXYS

2719 0.00
- +

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Tube HiPerFET™, PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 74A (Tc) 10V 77mOhm @ 500mA, 10V 5V @ 4mA 165 nC @ 10 V ±30V 9900 pF @ 25 V - 1400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB120N50P2

Таблицы данных

IXFB120N50P2

IXFB120N50P2

MOSFET N-CH 500V 120A PLUS264

IXYS

2835 0.00
- +

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Расследования

Tube HiPerFET™, PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 120A (Tc) 10V 43mOhm @ 500mA, 10V 5V @ 8mA 300 nC @ 10 V ±30V 19000 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) Through Hole
HAT1072H-EL-E

Таблицы данных

HAT1072H-EL-E

HAT1072H-EL-E

MOSFET P-CH 30V 40A LFPAK

Renesas Electronics America Inc

2020 0.00
- +

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Расследования

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V - 155 nC @ 10 V +10V, -20V 9500 pF @ 10 V - 30W (Tc) 150°C (TJ) Surface Mount
HAT2170H-EL-E

Таблицы данных

HAT2170H-EL-E

HAT2170H-EL-E

MOSFET N-CH 40V 45A LFPAK

Renesas Electronics America Inc

3593 0.00
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 45A (Ta) 7V, 10V 4.2mOhm @ 22.5A, 10V 3V @ 1mA 62 nC @ 10 V ±20V 4650 pF @ 10 V - 30W (Tc) 150°C (TJ) Surface Mount
HAT2172H-EL-E

Таблицы данных

HAT2172H-EL-E

HAT2172H-EL-E

MOSFET N-CH 40V 30A LFPAK

Renesas Electronics America Inc

3906 0.00
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta) 7V, 10V 7.5mOhm @ 15A, 10V 3V @ 1mA 32 nC @ 10 V ±20V 2420 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
SSM3J108TU(TE85L)

Таблицы данных

SSM3J108TU(TE85L)

SSM3J108TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage

2752 0.00
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Tape & Reel (TR) U-MOSIII Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.8V, 4V 158mOhm @ 800mA, 4V 1V @ 1mA - ±8V 250 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
TK40P03M1(T6RSS-Q)

Таблицы данных

TK40P03M1(T6RSS-Q)

TK40P03M1(T6RSS-Q)

MOSFET N-CH 30V 40A DP

Toshiba Semiconductor and Storage

2040 0.00
- +

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Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.3V @ 100µA 17.5 nC @ 10 V ±20V 1150 pF @ 10 V - - - Surface Mount
TK40P04M1(T6RSS-Q)

Таблицы данных

TK40P04M1(T6RSS-Q)

TK40P04M1(T6RSS-Q)

MOSFET N-CH 40V 40A DP

Toshiba Semiconductor and Storage

3945 0.00
- +

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Расследования

Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 4.5V, 10V 11mOhm @ 20A, 10V 2.3V @ 200µA 29 nC @ 10 V ±20V 1920 pF @ 10 V - 47W (Tc) 150°C (TJ) Surface Mount
TK4A60DA(STA4,Q,M)

Таблицы данных

TK4A60DA(STA4,Q,M)

TK4A60DA(STA4,Q,M)

MOSFET N-CH 600V 3.5A TO220SIS

Toshiba Semiconductor and Storage

3603 0.00
- +

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Расследования

Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) Through Hole
RSS100N03FU6TB

Таблицы данных

RSS100N03FU6TB

RSS100N03FU6TB

MOSFET N-CH 30V 10A 8SOP

Rohm Semiconductor

2181 0.00
- +

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Расследования

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 13mOhm @ 10A, 10V 2.5V @ 1mA 14 nC @ 5 V 20V 1070 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RSS105N03FU6TB

Таблицы данных

RSS105N03FU6TB

RSS105N03FU6TB

MOSFET N-CH 30V 10.5A 8SOP

Rohm Semiconductor

2097 0.00
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Расследования

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.5A (Ta) 4V, 10V 11.7mOhm @ 10.5A, 10V 2.5V @ 1mA 15 nC @ 5 V 20V 1130 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RSS110N03FU6TB

Таблицы данных

RSS110N03FU6TB

RSS110N03FU6TB

MOSFET N-CH 30V 11A 8SOP

Rohm Semiconductor

3941 0.00
- +

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Расследования

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4V, 10V 10.7mOhm @ 11A, 10V 2.5V @ 1mA 17 nC @ 5 V 20V 1300 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
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