Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI60R520CPAKSA1

Таблицы данных

IPI60R520CPAKSA1

IPI60R520CPAKSA1

MOSFET N-CH 600V 6.8A TO262-3

Infineon Technologies

3768 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 340µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R600CPAKSA1

Таблицы данных

IPI60R600CPAKSA1

IPI60R600CPAKSA1

MOSFET N-CH 600V 6.1A TO262-3

Infineon Technologies

3916 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI70N04S307AKSA1

Таблицы данных

IPI70N04S307AKSA1

IPI70N04S307AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

2274 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 50µA 40 nC @ 10 V ±20V 2700 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI70N10S312AKSA1

Таблицы данных

IPI70N10S312AKSA1

IPI70N10S312AKSA1

MOSFET N-CH 100V 70A TO262-3

Infineon Technologies

19500 0.76
- +

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Расследования

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 11.6mOhm @ 70A, 10V 4V @ 83µA 66 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI11N60CFDHKSA1

Таблицы данных

SPI11N60CFDHKSA1

SPI11N60CFDHKSA1

MOSFET N-CH 650V 11A TO262-3

Infineon Technologies

3625 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 440mOhm @ 7A, 10V 5V @ 500µA 64 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI15N60CFDHKSA1

Таблицы данных

SPI15N60CFDHKSA1

SPI15N60CFDHKSA1

MOSFET N-CH 650V 13.4A TO262-3

Infineon Technologies

3302 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.4A (Tc) 10V 330mOhm @ 9.4A, 10V 5V @ 750µA 84 nC @ 10 V ±20V 1820 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI15N65C3XKSA1

Таблицы данных

SPI15N65C3XKSA1

SPI15N65C3XKSA1

MOSFET N-CH 650V 15A TO262-3

Infineon Technologies

13833 1.65
- +

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Расследования

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI20N60CFDHKSA1

Таблицы данных

SPI20N60CFDHKSA1

SPI20N60CFDHKSA1

MOSFET N-CH 650V 20.7A TO262-3

Infineon Technologies

3634 0.00
- +

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Расследования

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 220mOhm @ 13.1A, 10V 5V @ 1mA 124 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI70N10SL16AKSA1

Таблицы данных

IPI70N10SL16AKSA1

IPI70N10SL16AKSA1

MOSFET N-CH 100V 70A TO262-3

Infineon Technologies

9000 1.54
- +

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Расследования

Bulk,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80CN10N G

Таблицы данных

IPI80CN10N G

IPI80CN10N G

MOSFET N-CH 100V 13A TO262-3

Infineon Technologies

2265 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 80mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N03S4L03AKSA1

Таблицы данных

IPI80N03S4L03AKSA1

IPI80N03S4L03AKSA1

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies

2423 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N03S4L04AKSA1

Таблицы данных

IPI80N03S4L04AKSA1

IPI80N03S4L04AKSA1

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies

3321 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.7mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S204AKSA1

Таблицы данных

IPI80N04S204AKSA1

IPI80N04S204AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

3335 0.00
- +

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Расследования

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S2H4AKSA1

Таблицы данных

IPI80N04S2H4AKSA1

IPI80N04S2H4AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

2713 0.00
- +

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Расследования

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S303AKSA1

Таблицы данных

IPI80N04S303AKSA1

IPI80N04S303AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

164000 1.11
- +

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Расследования

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S304AKSA1

Таблицы данных

IPI80N04S304AKSA1

IPI80N04S304AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

3560 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S306AKSA1

Таблицы данных

IPI80N04S306AKSA1

IPI80N04S306AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

3660 0.00
- +

Добавить

Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S207AKSA1

Таблицы данных

IPI80N06S207AKSA1

IPI80N06S207AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

3000 0.76
- +

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Расследования

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S208AKSA1

Таблицы данных

IPI80N06S208AKSA1

IPI80N06S208AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

3622 0.00
- +

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Расследования

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S2L05AKSA1

Таблицы данных

IPI80N06S2L05AKSA1

IPI80N06S2L05AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies

3131 0.00
- +

Добавить

Расследования

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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