Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD50N06S214ATMA1

Таблицы данных

IPD50N06S214ATMA1

IPD50N06S214ATMA1

MOSFET N-CH 55V 50A TO252-3

Infineon Technologies

2675 1.00
- +

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Расследования

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 10V 14.4mOhm @ 32A, 10V 4V @ 80µA 52 nC @ 10 V ±20V 1485 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50N06S2L13ATMA1

Таблицы данных

IPD50N06S2L13ATMA1

IPD50N06S2L13ATMA1

MOSFET N-CH 55V 50A TO252-3

Infineon Technologies

2287 0.00
- +

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Расследования

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 4.5V, 10V 12.7mOhm @ 34A, 10V 2V @ 80µA 69 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50R399CP

Таблицы данных

IPD50R399CP

IPD50R399CP

MOSFET N-CH 550V 9A TO252-3

Infineon Technologies

3407 0.00
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Расследования

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R520CP

Таблицы данных

IPD50R520CP

IPD50R520CP

MOSFET N-CH 550V 7.1A TO252-3

Infineon Technologies

2175 0.00
- +

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Расследования

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD64CN10N G

Таблицы данных

IPD64CN10N G

IPD64CN10N G

MOSFET N-CH 100V 17A TO252-3

Infineon Technologies

2655 0.00
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Расследования

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 64mOhm @ 17A, 10V 4V @ 20µA 9 nC @ 10 V ±20V 569 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80N06S3-09

Таблицы данных

IPD80N06S3-09

IPD80N06S3-09

MOSFET N-CH 55V 80A TO252-3

Infineon Technologies

2751 1.00
- +

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Расследования

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8.4mOhm @ 40A, 10V 4V @ 55µA 88 nC @ 10 V ±20V 6100 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI024N06N3GHKSA1

Таблицы данных

IPI024N06N3GHKSA1

IPI024N06N3GHKSA1

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies

3791 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI028N08N3GHKSA1

Таблицы данных

IPI028N08N3GHKSA1

IPI028N08N3GHKSA1

MOSFET N-CH 80V 100A TO262-3

Infineon Technologies

2699 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.8mOhm @ 100A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14200 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI030N10N3GHKSA1

Таблицы данных

IPI030N10N3GHKSA1

IPI030N10N3GHKSA1

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies

2124 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI032N06N3 G

Таблицы данных

IPI032N06N3 G

IPI032N06N3 G

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies

2524 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI037N06L3GHKSA1

Таблицы данных

IPI037N06L3GHKSA1

IPI037N06L3GHKSA1

MOSFET N-CH 60V 90A TO262-3

Infineon Technologies

2248 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.7mOhm @ 90A, 10V 2.2V @ 93µA 79 nC @ 4.5 V ±20V 13000 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI037N08N3GHKSA1

Таблицы данных

IPI037N08N3GHKSA1

IPI037N08N3GHKSA1

MOSFET N-CH 80V 100A TO262-3

Infineon Technologies

3666 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI06CN10N G

Таблицы данных

IPI06CN10N G

IPI06CN10N G

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies

3586 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.5mOhm @ 100A, 10V 4V @ 180µA 139 nC @ 10 V ±20V 9200 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI070N06N G

Таблицы данных

IPI070N06N G

IPI070N06N G

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

2932 0.00
- +

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Расследования

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 180µA 118 nC @ 10 V ±20V 4100 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI070N08N3 G

Таблицы данных

IPI070N08N3 G

IPI070N08N3 G

MOSFET N-CH 80V 80A TO262-3

Infineon Technologies

3904 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI072N10N3GXKSA1

Таблицы данных

IPI072N10N3GXKSA1

IPI072N10N3GXKSA1

MOSFET N-CH 100V 80A TO262-3

Infineon Technologies

500 1.37
- +

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Расследования

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7.2mOhm @ 80A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI075N15N3GHKSA1

Таблицы данных

IPI075N15N3GHKSA1

IPI075N15N3GHKSA1

MOSFET N-CH 150V 100A TO262-3

Infineon Technologies

2724 0.00
- +

Добавить

Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI08CN10N G

Таблицы данных

IPI08CN10N G

IPI08CN10N G

MOSFET N-CH 100V 95A TO262-3

Infineon Technologies

3909 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 95A (Tc) 10V 8.5mOhm @ 95A, 10V 4V @ 130µA 100 nC @ 10 V ±20V 6660 pF @ 50 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI08CNE8N G

Таблицы данных

IPI08CNE8N G

IPI08CNE8N G

MOSFET N-CH 85V 95A TO262-3

Infineon Technologies

3373 0.00
- +

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Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 95A (Tc) 10V 6.4mOhm @ 95A, 10V 4V @ 130µA 99 nC @ 10 V ±20V 6690 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100N04S303AKSA1

Таблицы данных

IPI100N04S303AKSA1

IPI100N04S303AKSA1

MOSFET N-CH 40V 100A TO262-3

Infineon Technologies

3137 0.00
- +

Добавить

Расследования

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 150µA 145 nC @ 10 V ±20V 9600 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
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