Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRLMS2002MOSFET N-CH 20V 6.5A MICRO6 |
2203 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | ±12V | 1310 pF @ 15 V | - | 2W (Ta) | - | Surface Mount |
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Таблицы данных |
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IRF7521D1MOSFET N-CH 20V 2.4A MICRO8 |
3813 | 0.00 |
ДобавитьРасследования |
Tube | FETKY™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 2.7V, 4.5V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA (Min) | 8 nC @ 4.5 V | ±12V | 260 pF @ 15 V | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7523D1MOSFET N-CH 30V 2.7A MICRO8 |
2456 | 0.00 |
ДобавитьРасследования |
Tube | FETKY™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.7A (Ta) | 4.5V, 10V | 130mOhm @ 1.7A, 10V | 1V @ 250µA | 12 nC @ 10 V | ±20V | 210 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7607MOSFET N-CH 20V 6.5A MICRO8 |
2841 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | ±12V | 1310 pF @ 15 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFU9310MOSFET P-CH 400V 1.8A TO251AA |
2838 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU9N20DMOSFET N-CH 200V 9.4A IPAK |
3665 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27 nC @ 10 V | ±30V | 560 pF @ 25 V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFUC20MOSFET N-CH 600V 2A TO251AA |
3814 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRLU2705MOSFET N-CH 55V 28A I-PAK |
2072 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25 nC @ 5 V | ±16V | 880 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF7413AMOSFET N-CH 30V 12A 8SO |
2918 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 13.5mOhm @ 6.6A, 10V | 1V @ 250µA | 79 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 2.5W (Ta) | - | Surface Mount |
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Таблицы данных |
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IRF7452MOSFET N-CH 100V 4.5A 8SO |
2373 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.5A (Ta) | 10V | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 930 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7457MOSFET N-CH 20V 15A 8SO |
3111 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 42 nC @ 4.5 V | ±20V | 3100 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7459MOSFET N-CH 20V 12A 8SO |
2437 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | 2V @ 250µA | 35 nC @ 4.5 V | ±12V | 2480 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7460MOSFET N-CH 20V 12A 8SO |
2850 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 12A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 2050 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7464MOSFET N-CH 200V 1.2A 8SO |
2940 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 1.2A (Ta) | 10V | 730mOhm @ 720mA, 10V | 5.5V @ 250µA | 14 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7466MOSFET N-CH 30V 11A 8SO |
2150 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 23 nC @ 4.5 V | ±20V | 2100 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7467MOSFET N-CH 30V 11A 8SO |
3932 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32 nC @ 4.5 V | ±12V | 2530 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7468MOSFET N-CH 40V 9.4A 8SO |
3208 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34 nC @ 4.5 V | ±12V | 2460 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4420DYMOSFET N-CH 30V 12.5A 8SO |
2245 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78 nC @ 10 V | ±20V | 2240 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFL024NMOSFET N-CH 55V 2.8A SOT223 |
3600 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFL1006MOSFET N-CH 60V 1.6A SOT223 |
3264 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A (Ta) | 10V | 220mOhm @ 1.6A, 10V | 4V @ 250µA | 8 nC @ 10 V | ±20V | 160 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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