Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFS33N15DMOSFET N-CH 150V 33A D2PAK |
2912 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS9N60AMOSFET N-CH 600V 9.2A D2PAK |
3984 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFSL31N20DMOSFET N-CH 200V 31A TO262 |
3185 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110 nC @ 10 V | ±30V | 2370 pF @ 25 V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRL1104SMOSFET N-CH 40V 104A D2PAK |
3973 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 2.4W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRL2703SMOSFET N-CH 30V 24A D2PAK |
2311 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 40mOhm @ 14A, 10V | 1V @ 250µA | 15 nC @ 4.5 V | ±16V | 450 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRL3402SMOSFET N-CH 20V 85A D2PAK |
3636 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA (Min) | 78 nC @ 4.5 V | ±10V | 3300 pF @ 15 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR18N15DMOSFET N-CH 150V 18A DPAK |
3247 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 900 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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94-2335MOSFET N-CH 55V 28A DPAK |
3325 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25 nC @ 5 V | ±16V | 880 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR8503MOSFET N-CH 30V 44A DPAK |
2887 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 44A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±20V | 1650 pF @ 25 V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFU110MOSFET N-CH 100V 4.3A TO251AA |
2458 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU1205MOSFET N-CH 55V 44A IPAK |
3630 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU13N15DMOSFET N-CH 150V 14A IPAK |
2778 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29 nC @ 10 V | ±30V | 620 pF @ 25 V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU18N15DMOSFET N-CH 150V 18A IPAK |
2997 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 900 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFU214MOSFET N-CH 250V 2.2A TO251AA |
2653 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU224MOSFET N-CH 250V 3.8A TO251AA |
2271 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU3910MOSFET N-CH 100V 16A IPAK |
3400 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU4105MOSFET N-CH 55V 27A IPAK |
2184 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU6215MOSFET P-CH 150V 13A IPAK |
2719 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU9024NMOSFET P-CH 55V 11A IPAK |
3045 | 0.00 |
ДобавитьРасследования |
Tube | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU9214MOSFET P-CH 250V 2.7A TO251AA |
3068 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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