Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STD9HN65M2 STD9HN65M2

STD9HN65M2

MOSFET N-CH 650V 5.5A DPAK

STMicroelectronics

2540 1.14
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ M2 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.5A (Tc) 10V 820mOhm @ 2.5A, 10V 4V @ 250µA 11.5 nC @ 10 V ±25V 325 pF @ 100 V - 60W (Tc) 150°C (TJ) Surface Mount
SIHFS9N60A-GE3

Таблицы данных

SIHFS9N60A-GE3

SIHFS9N60A-GE3

MOSFET N-CH 600V 9.2A TO263

Vishay Siliconix

3270 1.14
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL13N65M2

Таблицы данных

STL13N65M2

STL13N65M2

MOSFET N-CH 650V 6.5A POWERFLAT

STMicroelectronics

2304 1.14
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 6.5A (Tc) 10V 475mOhm @ 3A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK6A45DA(STA4,Q,M)

Таблицы данных

TK6A45DA(STA4,Q,M)

TK6A45DA(STA4,Q,M)

MOSFET N-CH 450V 5.5A TO220SIS

Toshiba Semiconductor and Storage

3710 1.12
- +

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Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 5.5A (Ta) 10V 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) Through Hole
IRLR3110ZTRRPBF

Таблицы данных

IRLR3110ZTRRPBF

IRLR3110ZTRRPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies

3637 1.12
- +

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Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80N04S306ATMA1

Таблицы данных

IPD80N04S306ATMA1

IPD80N04S306ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies

3054 1.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80N04S306BATMA1

Таблицы данных

IPD80N04S306BATMA1

IPD80N04S306BATMA1

MOSFET N-CHANNEL_30/40V

Infineon Technologies

2358 1.12
- +

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Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
NVMFS6H801NWFT3G

Таблицы данных

NVMFS6H801NWFT3G

NVMFS6H801NWFT3G

TRENCH 8 80V NFET

onsemi

2630 1.12
- +

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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 23A (Ta), 157A (Tc) 10V 2.8mOhm @ 50A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 4120 pF @ 40 V - 3.8W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6004KNJTL

Таблицы данных

R6004KNJTL

R6004KNJTL

MOSFET N-CHANNEL 600V 4A TO263

Rohm Semiconductor

1000 0.97
- +

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Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 5V @ 1mA 10.2 nC @ 10 V ±20V 280 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GKI03061

Таблицы данных

GKI03061

GKI03061

MOSFET N-CH 30V 14A 8DFN

Sanken

2624 1.12
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 6.2mOhm @ 31A, 10V 2.5V @ 350µA 24.6 nC @ 10 V ±20V 1480 pF @ 15 V - 3.1W (Ta), 46W (Tc) 150°C (TJ) Surface Mount
GKI04076

Таблицы данных

GKI04076

GKI04076

MOSFET N-CH 40V 11A 8DFN

Sanken

2562 1.12
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 11A (Ta) 4.5V, 10V 8.3mOhm @ 23.3A, 10V 2.5V @ 350µA 24.9 nC @ 10 V ±20V 1470 pF @ 25 V - 3.1W (Ta), 46W (Tc) 150°C (TJ) Surface Mount
NTTFS002N04CTAG

Таблицы данных

NTTFS002N04CTAG

NTTFS002N04CTAG

MOSFET N-CH 40V 27A/136A 8WDFN

onsemi

2077 1.12
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 136A (Tc) 10V 2.4mOhm @ 50A, 10V 3.5V @ 90µA 34 nC @ 10 V ±20V 2250 pF @ 25 V - 3.2W (Ta), 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105ZTRL

Таблицы данных

AUIRFR4105ZTRL

AUIRFR4105ZTRL

MOSFET N-CH 55V 20A DPAK

Infineon Technologies

2495 1.00
- +

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Расследования

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF2250N80Z

Таблицы данных

FCPF2250N80Z

FCPF2250N80Z

MOSFET N-CH 800V 2.6A TO220F

onsemi

2242 1.12
- +

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Tube,Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 21.9W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY02N50D-TRL

Таблицы данных

IXTY02N50D-TRL

IXTY02N50D-TRL

MOSFET N-CH

IXYS

3726 1.13
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Tape & Reel (TR) Depletion Active - - - 250mA (Tj) - - - - - - - - - -
RCX050N25

Таблицы данных

RCX050N25

RCX050N25

MOSFET N-CH 250V 5A TO220FM

Rohm Semiconductor

3906 1.13
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 5A (Ta) 10V 1100mOhm @ 2.5A, 10V 5.5V @ 1mA 9 nC @ 10 V ±30V 410 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TK6Q65W,S1Q

Таблицы данных

TK6Q65W,S1Q

TK6Q65W,S1Q

MOSFET N-CH 650V 5.8A IPAK

Toshiba Semiconductor and Storage

2350 1.13
- +

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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1.05Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) Through Hole
STU5N80K5

Таблицы данных

STU5N80K5

STU5N80K5

MOSFET N-CH 800V 4A IPAK

STMicroelectronics

2032 1.13
- +

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Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.75Ohm @ 2A, 10V 5V @ 100µA 5 nC @ 10 V ±30V 177 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOB7S60L

Таблицы данных

AOB7S60L

AOB7S60L

MOSFET N-CH 600V 7A TO263

Alpha & Omega Semiconductor Inc.

3111 1.13
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® aMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 3.9V @ 250µA 8.2 nC @ 10 V ±30V 372 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK4A80E,S4X

Таблицы данных

TK4A80E,S4X

TK4A80E,S4X

PB-FPOWERMOSFETTRANSISTORTO-220S

Toshiba Semiconductor and Storage

3458 1.09
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Ta) 10V 3.5Ohm @ 2A, 10V 4V @ 400µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C Through Hole
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