Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() |
STD9HN65M2MOSFET N-CH 650V 5.5A DPAK |
2540 | 1.14 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M2 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.5A (Tc) | 10V | 820mOhm @ 2.5A, 10V | 4V @ 250µA | 11.5 nC @ 10 V | ±25V | 325 pF @ 100 V | - | 60W (Tc) | 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
SIHFS9N60A-GE3MOSFET N-CH 600V 9.2A TO263 |
3270 | 1.14 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
STL13N65M2MOSFET N-CH 650V 6.5A POWERFLAT |
2304 | 1.14 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.5A (Tc) | 10V | 475mOhm @ 3A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 590 pF @ 100 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
TK6A45DA(STA4,Q,M)MOSFET N-CH 450V 5.5A TO220SIS |
3710 | 1.12 |
ДобавитьРасследования |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 5.5A (Ta) | 10V | 1.35Ohm @ 2.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | - | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
![]() |
IRLR3110ZTRRPBFMOSFET N-CH 100V 42A DPAK |
3637 | 1.12 |
ДобавитьРасследования |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48 nC @ 4.5 V | ±16V | 3980 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
IPD80N04S306ATMA1MOSFET N-CH 40V 90A TO252-3 |
3054 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 52µA | 47 nC @ 10 V | ±20V | 3250 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
IPD80N04S306BATMA1MOSFET N-CHANNEL_30/40V |
2358 | 1.12 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() Таблицы данных |
![]() |
NVMFS6H801NWFT3GTRENCH 8 80V NFET |
2630 | 1.12 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 23A (Ta), 157A (Tc) | 10V | 2.8mOhm @ 50A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 4120 pF @ 40 V | - | 3.8W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
R6004KNJTLMOSFET N-CHANNEL 600V 4A TO263 |
1000 | 0.97 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2 nC @ 10 V | ±20V | 280 pF @ 25 V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
GKI03061MOSFET N-CH 30V 14A 8DFN |
2624 | 1.12 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 6.2mOhm @ 31A, 10V | 2.5V @ 350µA | 24.6 nC @ 10 V | ±20V | 1480 pF @ 15 V | - | 3.1W (Ta), 46W (Tc) | 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
GKI04076MOSFET N-CH 40V 11A 8DFN |
2562 | 1.12 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Ta) | 4.5V, 10V | 8.3mOhm @ 23.3A, 10V | 2.5V @ 350µA | 24.9 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.1W (Ta), 46W (Tc) | 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
NTTFS002N04CTAGMOSFET N-CH 40V 27A/136A 8WDFN |
2077 | 1.12 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 136A (Tc) | 10V | 2.4mOhm @ 50A, 10V | 3.5V @ 90µA | 34 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 3.2W (Ta), 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
AUIRFR4105ZTRLMOSFET N-CH 55V 20A DPAK |
2495 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
FCPF2250N80ZMOSFET N-CH 800V 2.6A TO220F |
2242 | 1.12 |
ДобавитьРасследования |
Tube,Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.6A (Tc) | 10V | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14 nC @ 10 V | ±20V | 585 pF @ 100 V | - | 21.9W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
![]() |
IXTY02N50D-TRLMOSFET N-CH |
3726 | 1.13 |
ДобавитьРасследования |
Tape & Reel (TR) | Depletion | Active | - | - | - | 250mA (Tj) | - | - | - | - | - | - | - | - | - | - |
![]() Таблицы данных |
![]() |
RCX050N25MOSFET N-CH 250V 5A TO220FM |
3906 | 1.13 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 5A (Ta) | 10V | 1100mOhm @ 2.5A, 10V | 5.5V @ 1mA | 9 nC @ 10 V | ±30V | 410 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
![]() |
TK6Q65W,S1QMOSFET N-CH 650V 5.8A IPAK |
2350 | 1.13 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
![]() |
STU5N80K5MOSFET N-CH 800V 4A IPAK |
2032 | 1.13 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 5V @ 100µA | 5 nC @ 10 V | ±30V | 177 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
![]() |
AOB7S60LMOSFET N-CH 600V 7A TO263 |
3111 | 1.13 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | ±30V | 372 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
![]() |
TK4A80E,S4XPB-FPOWERMOSFETTRANSISTORTO-220S |
3458 | 1.09 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Ta) | 10V | 3.5Ohm @ 2A, 10V | 4V @ 400µA | 15 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 35W (Tc) | 150°C | Through Hole |