Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPS80R600P7AKMA1

Таблицы данных

IPS80R600P7AKMA1

IPS80R600P7AKMA1

MOSFET N-CH 800V 8A TO251-3

Infineon Technologies

19480 0.83
- +

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Расследования

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK12V60W,LVQ

Таблицы данных

TK12V60W,LVQ

TK12V60W,LVQ

MOSFET N-CH 600V 11.5A 4DFN

Toshiba Semiconductor and Storage

3873 1.09
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 104W (Tc) 150°C (TJ) Surface Mount
IPL65R650C6SATMA1

Таблицы данных

IPL65R650C6SATMA1

IPL65R650C6SATMA1

MOSFET N-CH 650V 6.7A THIN-PAK

Infineon Technologies

3034 1.00
- +

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Расследования

Tape & Reel (TR),Bulk CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 6.7A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 21 nC @ 10 V ±20V 440 pF @ 100 V - 56.8W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AOT3N100

Таблицы данных

AOT3N100

AOT3N100

MOSFET N-CH 1000V 2.8A TO220

Alpha & Omega Semiconductor Inc.

3552 1.09
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 2.8A (Tc) 10V 6Ohm @ 1.5A, 10V 4.5V @ 250µA 20 nC @ 10 V ±30V 830 pF @ 25 V - 132W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN6R9-100YSFX

Таблицы данных

PSMN6R9-100YSFX

PSMN6R9-100YSFX

MOSFET N-CH 100V 100A LFPAK56

Nexperia USA Inc.

2660 1.09
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V - - 50.3 nC @ 10 V - - - 238W 175°C (TJ) Surface Mount
IPD90P04P405AUMA1

Таблицы данных

IPD90P04P405AUMA1

IPD90P04P405AUMA1

MOSFET P-CH 40V 90A TO252-3

Infineon Technologies

2641 1.09
- +

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Расследования

Tape & Reel (TR) * Not For New Designs - - - - 10V - - - ±20V - - - - -
TN0610N3-G-P003

Таблицы данных

TN0610N3-G-P003

TN0610N3-G-P003

MOSFET N-CH 100V 500MA TO92-3

Microchip Technology

3225 1.09
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 500mA (Tj) 3V, 10V 1.5Ohm @ 750mA, 10V 2V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
PHP45NQ10T,127

Таблицы данных

PHP45NQ10T,127

PHP45NQ10T,127

MOSFET N-CH 100V 47A TO220AB

Nexperia USA Inc.

2202 1.00
- +

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Расследования

Bulk,Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 25mOhm @ 25A, 10V 4V @ 1mA 61 nC @ 10 V ±20V 2600 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF640NSTRRPBF

Таблицы данных

IRF640NSTRRPBF

IRF640NSTRRPBF

MOSFET N-CH 200V 18A D2PAK

Infineon Technologies

3334 1.10
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4124DY-T1-E3

Таблицы данных

SI4124DY-T1-E3

SI4124DY-T1-E3

MOSFET N-CH 40V 20.5A 8SO

Vishay Siliconix

2066 1.11
- +

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Расследования

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20.5A (Tc) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 77 nC @ 10 V ±20V 3540 pF @ 20 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4874BDY-T1-GE3

Таблицы данных

SI4874BDY-T1-GE3

SI4874BDY-T1-GE3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix

2327 1.11
- +

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Расследования

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 7mOhm @ 16A, 10V 3V @ 250µA 25 nC @ 4.5 V ±20V 3230 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP4N80E-GE3

Таблицы данных

SIHP4N80E-GE3

SIHP4N80E-GE3

MOSFET N-CH 800V 4.3A TO220AB

Vishay Siliconix

3436 1.11
- +

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Расследования

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF640S-GE3

Таблицы данных

SIHF640S-GE3

SIHF640S-GE3

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix

2199 1.11
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY02N120P-TRL IXTY02N120P-TRL

IXTY02N120P-TRL

MOSFET N-CH 1200V 200MA TO252

IXYS

2688 1.11
- +

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Расследования

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 200mA (Tc) 10V 75Ohm @ 100mA, 10V 4V @ 100µA 4.7 nC @ 10 V ±20V 104 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TQM150NB04CR RLG

Таблицы данных

TQM150NB04CR RLG

TQM150NB04CR RLG

MOSFET N-CH 40V 10A/41A PDFN56U

Taiwan Semiconductor Corporation

2842 1.11
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta), 41A (Tc) 7V, 10V 15mOhm @ 10A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 1044 pF @ 20 V - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
TN0610N3-G-P013

Таблицы данных

TN0610N3-G-P013

TN0610N3-G-P013

MOSFET N-CH 100V 500MA TO92-3

Microchip Technology

2147 1.09
- +

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Расследования

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 100 V 500mA (Tj) 3V, 10V 1.5Ohm @ 750mA, 10V 2V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJ401EP-T2_GE3

Таблицы данных

SQJ401EP-T2_GE3

SQJ401EP-T2_GE3

MOSFET P-CH 12V 32A PPAK SO-8

Vishay Siliconix

2209 1.09
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 32A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V 1.5V @ 250µA 164 nC @ 4.5 V ±8V 10015 pF @ 6 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ431EP-T2_GE3

Таблицы данных

SQJ431EP-T2_GE3

SQJ431EP-T2_GE3

MOSFET P-CH 200V 12A PPAK SO-8

Vishay Siliconix

2603 1.09
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 6V, 10V 213mOhm @ 3.8A, 10V 3.5V @ 250µA 106 nC @ 10 V ±20V 4355 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMT10H003SPSW-13

Таблицы данных

DMT10H003SPSW-13

DMT10H003SPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2389 1.09
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 152A (Tc) 6V, 10V 3mOhm @ 30A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 5542 pF @ 50 V - 2.2W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB80N4F6AG

Таблицы данных

STB80N4F6AG

STB80N4F6AG

MOSFET N-CH 40V 80A D2PAK

STMicroelectronics

2134 1.09
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, STripFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6mOhm @ 40A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 2150 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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