Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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![]() Таблицы данных |
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IPS80R600P7AKMA1MOSFET N-CH 800V 8A TO251-3 |
19480 | 0.83 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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TK12V60W,LVQMOSFET N-CH 600V 11.5A 4DFN |
3873 | 1.09 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | Super Junction | 104W (Tc) | 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IPL65R650C6SATMA1MOSFET N-CH 650V 6.7A THIN-PAK |
3034 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | CoolMOS™ C6 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.7A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 21 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 56.8W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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AOT3N100MOSFET N-CH 1000V 2.8A TO220 |
3552 | 1.09 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 2.8A (Tc) | 10V | 6Ohm @ 1.5A, 10V | 4.5V @ 250µA | 20 nC @ 10 V | ±30V | 830 pF @ 25 V | - | 132W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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PSMN6R9-100YSFXMOSFET N-CH 100V 100A LFPAK56 |
2660 | 1.09 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | - | - | 50.3 nC @ 10 V | - | - | - | 238W | 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IPD90P04P405AUMA1MOSFET P-CH 40V 90A TO252-3 |
2641 | 1.09 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Not For New Designs | - | - | - | - | 10V | - | - | - | ±20V | - | - | - | - | - |
![]() Таблицы данных |
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TN0610N3-G-P003MOSFET N-CH 100V 500MA TO92-3 |
3225 | 1.09 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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PHP45NQ10T,127MOSFET N-CH 100V 47A TO220AB |
2202 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 10V | 25mOhm @ 25A, 10V | 4V @ 1mA | 61 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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IRF640NSTRRPBFMOSFET N-CH 200V 18A D2PAK |
3334 | 1.10 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1160 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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SI4124DY-T1-E3MOSFET N-CH 40V 20.5A 8SO |
2066 | 1.11 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20.5A (Tc) | 4.5V, 10V | 7.5mOhm @ 14A, 10V | 3V @ 250µA | 77 nC @ 10 V | ±20V | 3540 pF @ 20 V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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SI4874BDY-T1-GE3MOSFET N-CH 30V 12A 8SO |
2327 | 1.11 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 3V @ 250µA | 25 nC @ 4.5 V | ±20V | 3230 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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SIHP4N80E-GE3MOSFET N-CH 800V 4.3A TO220AB |
3436 | 1.11 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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SIHF640S-GE3MOSFET N-CH 200V 18A D2PAK |
2199 | 1.11 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTY02N120P-TRLMOSFET N-CH 1200V 200MA TO252 |
2688 | 1.11 |
ДобавитьРасследования |
Tape & Reel (TR) | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 200mA (Tc) | 10V | 75Ohm @ 100mA, 10V | 4V @ 100µA | 4.7 nC @ 10 V | ±20V | 104 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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TQM150NB04CR RLGMOSFET N-CH 40V 10A/41A PDFN56U |
2842 | 1.11 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta), 41A (Tc) | 7V, 10V | 15mOhm @ 10A, 10V | 3.8V @ 250µA | 20 nC @ 10 V | ±20V | 1044 pF @ 20 V | - | 3.1W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
![]() Таблицы данных |
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TN0610N3-G-P013MOSFET N-CH 100V 500MA TO92-3 |
2147 | 1.09 |
ДобавитьРасследования |
Tape & Box (TB) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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SQJ401EP-T2_GE3MOSFET P-CH 12V 32A PPAK SO-8 |
2209 | 1.09 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 32A (Tc) | 2.5V, 4.5V | 6mOhm @ 15A, 4.5V | 1.5V @ 250µA | 164 nC @ 4.5 V | ±8V | 10015 pF @ 6 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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SQJ431EP-T2_GE3MOSFET P-CH 200V 12A PPAK SO-8 |
2603 | 1.09 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 12A (Tc) | 6V, 10V | 213mOhm @ 3.8A, 10V | 3.5V @ 250µA | 106 nC @ 10 V | ±20V | 4355 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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DMT10H003SPSW-13MOSFET BVDSS: 61V~100V POWERDI50 |
2389 | 1.09 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 152A (Tc) | 6V, 10V | 3mOhm @ 30A, 10V | 4V @ 250µA | 85 nC @ 10 V | ±20V | 5542 pF @ 50 V | - | 2.2W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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STB80N4F6AGMOSFET N-CH 40V 80A D2PAK |
2134 | 1.09 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, STripFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 6mOhm @ 40A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |