Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPAW60R280P7SE8228XKSA1MOSFET N-CH 600V 12A TO220 |
2007 | 1.07 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AOW7S60MOSFET N-CH 600V 7A TO262 |
3796 | 1.07 |
ДобавитьРасследования |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | ±30V | 372 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDMS86263P-23507XFET -150V 53.0 MOHM PQFN56 |
2961 | 1.07 |
ДобавитьРасследования |
Tape & Reel (TR) | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 4.4A (Ta), 22A (Tc) | 6V, 10V | 53mOhm @ 4.4A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±25V | 3905 pF @ 75 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLI520GPBFMOSFET N-CH 100V 7.2A TO220-3 |
3418 | 1.07 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.2A (Tc) | 4V, 5V | 270mOhm @ 4.3A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP13N60DM2MOSFET N-CH 600V 11A TO220 |
2206 | 1.07 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 365mOhm @ 5.5A, 10V | 5V @ 250µA | 19 nC @ 10 V | ±25V | 730 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SI4413DDY-T1-GE3MOSFET P-CHANNEL 8SOIC |
2776 | 1.07 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | - | - | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 1.6V @ 250µA | 114 nC @ 10 V | - | 4780 pF @ 15 V | - | - | -55°C ~ 125°C | Surface Mount |
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Таблицы данных |
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NVTYS002N03CLTWGT6 30V N-CH LL IN LFPAK33 |
3261 | 1.07 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 29A (Ta), 140A (Tc) | 4.5V, 10V | 2.25mOhm @ 50A, 10V | 2.2V @ 250µA | 37 nC @ 10 V | ±20V | 2697 pF @ 15 V | - | 3.2W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK766R0-60E,118MOSFET N-CH 60V 75A D2PAK |
3976 | 1.07 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 6mOhm @ 25A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±20V | 4520 pF @ 25 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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TSM170N06CH C5GMOSFET N-CHANNEL 60V 38A TO251 |
2097 | 1.07 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 38A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | 28.5 nC @ 10 V | ±20V | 900 pF @ 25 V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK3A60DA(STA4,Q,M)MOSFET N-CH 600V 2.5A TO220SIS |
2558 | 1.08 |
ДобавитьРасследования |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF3007PBFMOSFET N-CH 75V 75A TO220AB |
2450 | 0.82 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF610STRRPBFMOSFET N-CH 200V 3.3A D2PAK |
2497 | 1.08 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF614STRRPBFMOSFET N-CH 250V 2.7A D2PAK |
2811 | 1.08 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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STL5N80K5MOSFET N-CH 800V 3A PWRFLAT VHV |
2566 | 1.08 |
ДобавитьРасследования |
Tape & Reel (TR) | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 5V @ 100µA | 5 nC @ 10 V | ±30V | 177 pF @ 100 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AOWF11N70MOSFET N-CH 700V 11A TO262F |
2398 | 1.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 11A (Tc) | 10V | 870mOhm @ 5.5A, 10V | 4.5V @ 250µA | 45 nC @ 10 V | ±30V | 2150 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RSJ300N10TLMOSFET N-CH 100V 30A LPTS |
2292 | 1.08 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 30A (Ta) | 4V, 10V | 52mOhm @ 15A, 10V | 2.5V @ 1mA | 50 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Surface Mount |
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FDMS86163P-23507XFET -100V 22.0 MOHM PQFN56 |
2265 | 1.08 |
ДобавитьРасследования |
Tape & Reel (TR) | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 7.9A (Ta), 50A (Tc) | 6V, 10V | 22mOhm @ 7.9A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±25V | 4085 pF @ 50 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TSM4NB60CH X0GMOSFET N-CHANNEL 600V 4A TO251 |
2447 | 1.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TSM4NB60CP ROGMOSFET N-CHANNEL 600V 4A TO252 |
2774 | 2.12 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPU80R600P7AKMA1MOSFET N-CH 800V 8A TO251-3 |
3443 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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