Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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![]() Таблицы данных |
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1N5616C.TRDIODE GEN PURP 400V 1A AXIAL |
2980 | 4.38 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 23pF @ 5V, 1MHz | 2 µs | 500 nA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.1 V @ 1 A | |||
![]() Таблицы данных |
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DSEP29-06BDIODE GEN PURP 600V 30A TO220AC |
3673 | 3.18 |
ДобавитьРасследования |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 250 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.52 V @ 30 A | ||
![]() Таблицы данных |
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VS-HFA16TB120SR-M3DIODE GEN PURP 1.2KV 16A D2PAK |
3859 | 1.76 |
ДобавитьРасследования |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 135 ns | 20 µA @ 1200 V | 1200 V | 16A (DC) | -55°C ~ 150°C | 3.93 V @ 32 A | ||
![]() Таблицы данных |
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ES 1FV0DIODE GEN PURP 1.5KV 500MA AXIAL |
2357 | 0.55 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1500 V | 1500 V | 500mA | -40°C ~ 150°C | 2 V @ 500 mA | |||
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1N5189/TRRECTIFIER UFR,FRR |
2208 | 7.25 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 2 µA @ 500 V | 500 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |||
![]() Таблицы данных |
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GP30B-E3/54DIODE GEN PURP 100V 3A DO201AD |
3971 | 0.59 |
ДобавитьРасследования |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.2 V @ 3 A | ||
![]() Таблицы данных |
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S6BDIODE GEN PURP 100V 6A DO4 |
3228 | 4.39 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |||
![]() Таблицы данных |
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CDBJSC8650-GDIODE, SIC STKY 8A 650V TO-220-2 |
2228 | 3.18 |
ДобавитьРасследования |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 560pF @ 0V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | |||
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D6025LCTPRECTIFIER 600V 25AMP TO-220L |
3455 | 1.76 |
ДобавитьРасследования |
Tube | Dxx25L | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 10 µA @ 600 V | 600 V | 15.9A | -40°C ~ 125°C | 1.6 V @ 15 A | ||
![]() Таблицы данных |
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BYV98-50-TAPDIODE AVALANCHE 50V 4A SOD64 |
2592 | 0.55 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |||
![]() Таблицы данных |
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1N5420E3/TRRECTIFIER UFR,FRR |
2594 | 7.25 |
ДобавитьРасследования |
Tape & Reel (TR) | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | - | 600 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | ||
![]() Таблицы данных |
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GP30D-E3/54DIODE GEN PURP 200V 3A DO201AD |
3194 | 0.59 |
ДобавитьРасследования |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A | ||
![]() Таблицы данных |
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S6BRDIODE GEN PURP REV 100V 6A DO4 |
2190 | 4.39 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |||
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RFS30TZ6SGC13650V 30A, TO-247-2L, ULTRA SOFT |
3368 | 5.73 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 650 V | 650 V | 30A | 175°C | 2.3 V @ 30 A | |||
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C6D08065Q-TR8A 650V SIC SCHOTTKY QFN |
2269 | 3.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),- | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 518pF @ 0V, 1MHz | - | 20 µA @ 650 V | 650 V | 28A (DC) | -55°C ~ 175°C | 1.5 V @ 8 A | |||
![]() Таблицы данных |
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BYW172D-TAPDIODE AVALANCHE 200V 3A SOD64 |
3242 | 0.55 |
ДобавитьРасследования |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |||
![]() Таблицы данных |
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1N5188/TRRECTIFIER UFR,FRR |
3403 | 7.25 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 2 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |||
![]() Таблицы данных |
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1N5407GP-E3/54DIODE GEN PURP 800V 3A DO201AD |
3289 | 0.59 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 800 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |||
![]() Таблицы данных |
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S6DDIODE GEN PURP 200V 6A DO4 |
2238 | 4.39 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 200 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |||
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RFL30TZ6SGC13650V 30A, TO-247-2L, ULTRA SOFT |
3319 | 5.73 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 5 µA @ 650 V | 650 V | 30A | 175°C | 1.5 V @ 30 A |