Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
	1N5819-1/TR DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	3303	7.16	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	70pF @ 5V, 1MHz	-	50 µA @ 45 V	45 V	1A	-65°C ~ 125°C	340 mV @ 1 A
Таблицы данных	UGS5JHMNG DIODE GEN PURP 600V 5A TO263AB Taiwan Semiconductor Corporation	2681	0.59	- + Добавить Расследования	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	20 ns	20 µA @ 600 V	600 V	5A	-55°C ~ 150°C	2 V @ 5 A
	JANHCB1N6642 SIGNAL/COMPUTER DIODE Microchip Technology	3495	4.35	- + Добавить Расследования	Tape & Reel (TR)	Military, MIL-PRF-19500/394	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	5pF @ 0V, 1MHz	5 ns	500 nA @ 75 V	75 V	300mA	-65°C ~ 175°C	1.2 V @ 100 mA
Таблицы данных	FFSP2065B-F085 SIC DIODE 650V onsemi	3434	3.13	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	866pF @ 1V, 100kHz	0 ns	40 µA @ 650 V	650 V	20A	-55°C ~ 175°C	1.7 V @ 20 A
Таблицы данных	HSM830J/TR13 DIODE SCHOTTKY 30V 8A DO214AB Microchip Technology	2686	1.76	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 30 V	30 V	8A	-55°C ~ 175°C	620 mV @ 8 A
Таблицы данных	HS5F V7G DIODE GEN PURP 300V 5A DO214AB Taiwan Semiconductor Corporation	3125	0.55	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	5A	-55°C ~ 150°C	1 V @ 5 A
	1N5819-1E3 DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	3569	7.16	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	70pF @ 5V, 1MHz	-	50 µA @ 45 V	45 V	1A	-65°C ~ 125°C	490 mV @ 1 A
Таблицы данных	ES 1F DIODE GEN PURP 1.5KV 500MA AXIAL Sanken	2470	0.59	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1500 V	1500 V	500mA	-40°C ~ 150°C	2 V @ 500 mA
Таблицы данных	VS-EBU15006-F4 DIODE GP 600V 150A POWERTAB Vishay General Semiconductor - Diodes Division	3643	4.35	- + Добавить Расследования	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	8 µA @ 600 V	600 V	150A	-55°C ~ 175°C	1.63 V @ 150 A
Таблицы данных	APT15DQ60SG FRED DQ 600 V 15 A TO-268 Microchip Technology	2806	3.13	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	21 ns	25 µA @ 600 V	-	15A	-55°C ~ 175°C	2.4 V @ 15 A
Таблицы данных	HSM835J/TR13 DIODE SCHOTTKY 35V 8A DO214AB Microchip Technology	3102	1.76	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 35 V	35 V	8A	-55°C ~ 175°C	620 mV @ 8 A
Таблицы данных	RN 4Z DIODE GEN PURP 200V 3.5A AXIAL Sanken	2460	0.55	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	100 ns	50 µA @ 200 V	200 V	3.5A	-40°C ~ 150°C	920 mV @ 3.5 A
	JAN1N5802 DIODE GEN PURP 50V 2.5A AXIAL Microchip Technology	3089	7.18	- + Добавить Расследования	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 10V, 1MHz	25 ns	1 µA @ 50 V	50 V	2.5A	-65°C ~ 175°C	975 mV @ 2.5 A
Таблицы данных	BYV98-200-TAP DIODE AVALANCHE 200V 4A SOD64 Vishay General Semiconductor - Diodes Division	2138	0.59	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	35 ns	10 µA @ 200 V	200 V	4A	-55°C ~ 175°C	1.1 V @ 5 A
	STPSC20065CWL DFD THYR TRIAC & RECTIFIER STMicroelectronics	3427	4.36	- + Добавить Расследования	Tube	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	670pF @ 0V, 1MHz	0 ns	130 µA @ 650 V	650 V	10A	-40°C ~ 175°C	1.45 V @ 10 A
Таблицы данных	CDLL485B DIODE GEN PURP 180V 200MA DO213 Microchip Technology	2717	3.14	- + Добавить Расследования	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	-	100 µA @ 180 V	180 V	200mA	-65°C ~ 175°C	1 V @ 100 mA
Таблицы данных	HSM840J/TR13 DIODE SCHOTTKY 40V 8A DO214AB Microchip Technology	3308	1.76	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 40 V	40 V	8A	-55°C ~ 175°C	620 mV @ 8 A
Таблицы данных	1N5408-E3/73 DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division	2385	0.00	- + Добавить Расследования	Cut Tape (CT),Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	5 µA @ 1000 V	1000 V	3A	-50°C ~ 150°C	1.2 V @ 3 A
Таблицы данных	UPR60/TR13 DIODE GEN PURP 600V 2A POWERMITE Microchip Technology	2004	7.20	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	30 ns	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.6 V @ 2 A
Таблицы данных	BYW178-TAP DIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division	2864	0.59	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	60 ns	1 µA @ 800 V	800 V	3A	-55°C ~ 175°C	1.9 V @ 3 A

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