Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
JANTX1N4246

Таблицы данных

JANTX1N4246

JANTX1N4246

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

2309 4.38
- +

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Bulk Military, MIL-PRF-19500/286 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 3 A
CDLL0.5A20

Таблицы данных

CDLL0.5A20

CDLL0.5A20

DIODE SCHOTTKY 20V 500MA DO213AA

Microchip Technology

2953 3.14
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 0V, 1MHz - 10 µA @ 20 V 20 V 500mA -65°C ~ 125°C 650 mV @ 500 mA
MBR60150PTE3/TU MBR60150PTE3/TU

MBR60150PTE3/TU

DIODE SCHOTTKY 60A 150V TO-247AD

Microchip Technology

3839 1.76
- +

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Tube RoHS - - Active - - - - - - - -
1N5401-E3/73

Таблицы данных

1N5401-E3/73

1N5401-E3/73

DIODE GEN PURP 100V 3A DO201AD

Vishay General Semiconductor - Diodes Division

2334 0.00
- +

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Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A -50°C ~ 150°C 1.2 V @ 3 A
UPR60/TR7

Таблицы данных

UPR60/TR7

UPR60/TR7

DIODE GEN PURP 600V 2A POWERMITE

Microchip Technology

2152 7.20
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.6 V @ 2 A
SF5406-TAP

Таблицы данных

SF5406-TAP

SF5406-TAP

DIODE GEN PURP 600V 3A SOD64

Vishay General Semiconductor - Diodes Division

3761 0.59
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 5 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.7 V @ 3 A
JAN1N3613/TR JAN1N3613/TR

JAN1N3613/TR

STD RECTIFIER

Microchip Technology

2347 4.38
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/228 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 300 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N4245

Таблицы данных

1N4245

1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

2454 3.14
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 3 A
MBR60200PTE3/TU MBR60200PTE3/TU

MBR60200PTE3/TU

DIODE SCHOTTKY 60A 200V TO-247AD

Microchip Technology

3228 1.76
- +

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Расследования

Tube RoHS - - Active - - - - - - - -
1N5404-E3/73

Таблицы данных

1N5404-E3/73

1N5404-E3/73

DIODE GEN PURP 400V 3A DO201AD

Vishay General Semiconductor - Diodes Division

2778 0.00
- +

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Расследования

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -50°C ~ 150°C 1.2 V @ 3 A
JANTX1N5416/TR

Таблицы данных

JANTX1N5416/TR

JANTX1N5416/TR

RECTIFIER UFR,FRR

Microchip Technology

2206 7.20
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/411 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 1 µA @ 100 V 100 V 3A -65°C ~ 175°C 1.5 V @ 9 A
SF5407-TAP

Таблицы данных

SF5407-TAP

SF5407-TAP

DIODE GEN PURP 800V 3A SOD64

Vishay General Semiconductor - Diodes Division

2698 0.59
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 5 µA @ 800 V 800 V 3A -55°C ~ 175°C 1.7 V @ 3 A
1N5617E3/TR 1N5617E3/TR

1N5617E3/TR

RECTIFIER UFR,FRR

Microchip Technology

2869 4.38
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 12V, 1MHz 150 ns 500 nA @ 400 V 400 V 1A -65°C ~ 175°C 800 mV @ 3 A
1N485B

Таблицы данных

1N485B

1N485B

ZENER DIODE

Microchip Technology

2251 3.14
- +

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Расследования

Bulk RoHS - - Active - - - - - - - -
MBR6040PTE3/TU MBR6040PTE3/TU

MBR6040PTE3/TU

DIODE SCHOTTKY 60A 40V TO-247AD

Microchip Technology

2648 1.76
- +

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Расследования

Tube RoHS - - Active - - - - - - - -
1N5407-E3/73

Таблицы данных

1N5407-E3/73

1N5407-E3/73

DIODE GEN PURP 800V 3A DO201AD

Vishay General Semiconductor - Diodes Division

2489 0.00
- +

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Расследования

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -50°C ~ 150°C 1.2 V @ 3 A
VS-40HFLR10S02

Таблицы данных

VS-40HFLR10S02

VS-40HFLR10S02

DIODE GEN PURP 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

2501 7.21
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 100 µA @ 100 V 100 V 40A -40°C ~ 125°C 1.95 V @ 40 A
SF5406-TR

Таблицы данных

SF5406-TR

SF5406-TR

DIODE GEN PURP 600V 3A SOD64

Vishay General Semiconductor - Diodes Division

3036 0.59
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 5 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.7 V @ 3 A
JAN1N3614/TR JAN1N3614/TR

JAN1N3614/TR

STD RECTIFIER

Microchip Technology

3679 4.38
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/228 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
CDLL0.2A30/TR

Таблицы данных

CDLL0.2A30/TR

CDLL0.2A30/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

3284 3.14
- +

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Расследования

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 50pF @ 0V, 1MHz - 5 µA @ 30 V 30 V 200mA -65°C ~ 125°C 500 mV @ 200 mA
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