Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
IDP2321XUMA1 IDP2321XUMA1

IDP2321XUMA1

IC AC/DC DGTL PLATFORM 16SOIC

Infineon Technologies

2751 3.02
- +

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Tape & Reel (TR) RoHS - - Not For New Designs - - - - - - - -
SE20DB-M3/I

Таблицы данных

SE20DB-M3/I

SE20DB-M3/I

DIODE GEN PURP 200V 3.9A TO263AC

Vishay General Semiconductor - Diodes Division

3353 1.21
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 150pF @ 4V, 1MHz 3 µs 25 µA @ 100 V 100 V 3.9A -55°C ~ 175°C 1.2 V @ 20 A
1N486BUR 1N486BUR

1N486BUR

DIODE RECT STD RECOVERY

Microchip Technology

2560 4.31
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Tape & Reel (TR) RoHS - - Active - - - - - - - -
DPF15I600APA DPF15I600APA

DPF15I600APA

PWR DIODE DISC-FRED TO-220AB / T

IXYS

2546 1.73
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Tube RoHS - - Active - - - - - - - -
SE20DJ-M3/I

Таблицы данных

SE20DJ-M3/I

SE20DJ-M3/I

DIODE GEN PURP 600V 3.9A TO263AC

Vishay General Semiconductor - Diodes Division

3050 0.54
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 150pF @ 4V, 1MHz 3 µs 25 µA @ 600 V 600 V 3.9A -55°C ~ 175°C 1.2 V @ 20 A
APT60D20BG

Таблицы данных

APT60D20BG

APT60D20BG

DIODE GEN PURP 200V 60A TO247

Microchip Technology

3611 3.03
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 31 ns 250 µA @ 200 V 200 V 60A -55°C ~ 175°C 1.3 V @ 60 A
SE20DD-M3/I

Таблицы данных

SE20DD-M3/I

SE20DD-M3/I

DIODE GEN PURP 200V 3.9A TO263AC

Vishay General Semiconductor - Diodes Division

2717 1.21
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 150pF @ 4V, 1MHz 3 µs 25 µA @ 200 V 200 V 3.9A -55°C ~ 175°C 1.2 V @ 20 A
JAN1N5614

Таблицы данных

JAN1N5614

JAN1N5614

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

2906 4.31
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Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 200 V 200 V 1A -65°C ~ 200°C 1.3 V @ 3 A
DSS10-01AS-TUB

Таблицы данных

DSS10-01AS-TUB

DSS10-01AS-TUB

DIODE SCHOTTKY 100V 10A TO263AB

IXYS

3695 1.73
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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 100 V 100 V 10A -55°C ~ 175°C 840 mV @ 10 A
TSPB5H120S S1G

Таблицы данных

TSPB5H120S S1G

TSPB5H120S S1G

DIODE SCHOTTKY 120V 5A SMPC4.0

Taiwan Semiconductor Corporation

3833 0.58
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 150 µA @ 120 V 120 V 5A -55°C ~ 150°C 740 mV @ 5 A
1N4938UR-1

Таблицы данных

1N4938UR-1

1N4938UR-1

DIODE GEN PURP 175V 100MA DO213

Microchip Technology

3759 3.03
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Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 50 ns 100 nA @ 175 V 175 V 100mA -65°C ~ 175°C 1 V @ 100 mA
SE20DG-M3/I

Таблицы данных

SE20DG-M3/I

SE20DG-M3/I

DIODE GEN PURP 400V 3.9A TO263AC

Vishay General Semiconductor - Diodes Division

3490 1.21
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 150pF @ 4V, 1MHz 3 µs 25 µA @ 400 V 400 V 3.9A -55°C ~ 175°C 1.2 V @ 20 A
JAN1N5615

Таблицы данных

JAN1N5615

JAN1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

3711 4.31
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Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.6 V @ 3 A
VS-APH3006LHN3

Таблицы данных

VS-APH3006LHN3

VS-APH3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

3277 1.73
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Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 26 ns 30 µA @ 600 V 600 V 30A -55°C ~ 175°C 2.65 V @ 30 A
TSPB5H150S S1G

Таблицы данных

TSPB5H150S S1G

TSPB5H150S S1G

DIODE SCHOTTKY 150V 5A SMPC4.0

Taiwan Semiconductor Corporation

3253 0.54
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 5A -55°C ~ 150°C 840 mV @ 5 A
1N5616/TR

Таблицы данных

1N5616/TR

1N5616/TR

STD RECTIFIER

Microchip Technology

2433 3.03
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 400 V 400 V 1A -65°C ~ 200°C 1.3 V @ 3 A
NTS10120MFST1G

Таблицы данных

NTS10120MFST1G

NTS10120MFST1G

DIODE SCHOTTKY 120V 10A 5DFN

onsemi

2405 1.11
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 30 µA @ 120 V 120 V 10A -55°C ~ 175°C 820 mV @ 10 A
JAN1N5616

Таблицы данных

JAN1N5616

JAN1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

2727 4.31
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Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 400 V 400 V 1A -65°C ~ 200°C 1.3 V @ 3 A
VS-EPU3006LHN3

Таблицы данных

VS-EPU3006LHN3

VS-EPU3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

2420 1.73
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Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 30 µA @ 600 V 600 V 30A -55°C ~ 175°C 2 V @ 30 A
RFVS8TG6SGC9

Таблицы данных

RFVS8TG6SGC9

RFVS8TG6SGC9

DIODE GEN PURP 600V 8A TO220AC

Rohm Semiconductor

939 1.20
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Tube,Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 10 µA @ 600 V 600 V 8A 150°C (Max) 3 V @ 8 A
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