Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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Таблицы данных |
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S2ATRDIODE GEN PURP 50V 2A SMB |
2567 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||
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Таблицы данных |
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RL202GP-TPDIODE GEN PURP 100V 2A DO15 |
2454 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | - | 100 V | 2A | -55°C ~ 150°C | - | |||
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Таблицы данных |
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STPSC10H065BY-TRAUTOMOTIVE 650 V POWER SCHOTTKY |
2570 | 3.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 480pF @ 0V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | - | ||
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Таблицы данных |
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BAS1602LE6327XTMA1DIODE GEN PURP 80V 200MA TSLP-2 |
3487 | 0.04 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 200mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |||
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Таблицы данных |
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IDL08G65C5XUMA2DIODE SCHOTTKY 650V 8A VSON-4 |
3727 | 4.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 250pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 150°C | 1.7 V @ 8 A | ||
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Таблицы данных |
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VS-70HF40DIODE GEN PURP 400V 70A DO203AB |
2172 | 8.00 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 15 mA @ 400 V | 400 V | 70A | -65°C ~ 150°C | 1.35 V @ 220 A | |||
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Таблицы данных |
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S2BTRDIODE GEN PURP 100V 2A SMB |
3679 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||
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Таблицы данных |
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RL203GP-TPDIODE GEN PURP 200V 2A DO15 |
3881 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | - | 200 V | 2A | -55°C ~ 150°C | - | |||
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Таблицы данных |
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1SS388-TPDIODE SCHOTTKY 40V 100MA SOD523 |
2186 | 0.04 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 25pF @ 0V, 1MHz | - | 5 µA @ 10 V | 40 V | 100mA | 125°C (Max) | 600 mV @ 50 mA | |||
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Таблицы данных |
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AIDW20S65C5XKSA1DIODE SCHOTTKY 650V 20A TO247 |
2612 | 8.01 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 584pF @ 1V, 1MHz | 0 ns | 120 µA @ 650 V | 650 V | 20A (DC) | -40°C ~ 175°C | 1.7 V @ 20 A | ||
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Таблицы данных |
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S2DTRDIODE GEN PURP 200V 2A SMB |
3556 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||
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Таблицы данных |
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RL205GP-TPDIODE GEN PURP 600V 2A DO15 |
3944 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | - | 600 V | 2A | -55°C ~ 150°C | - | |||
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Таблицы данных |
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STPSC10065GY-TRDIODES AND RECTIFIERS |
3055 | 3.65 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 670pF @ 0V, 1MHz | 0 ns | 130 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.45 V @ 10 A | ||
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Таблицы данных |
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1SS400 RJGDIODE GEN PURP 100V 200MA SOD523 |
3440 | 0.04 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 500mV, 1MHz | 4 ns | 100 nA @ 80 V | 100 V | 200mA | -55°C ~ 150°C | 1.2 V @ 100 mA | |||
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Таблицы данных |
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DSI30-08AS-TUBDIODE GEN PURP 800V 30A TO263 |
2036 | 2.69 |
ДобавитьРасследования |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 400V, 1MHz | - | 40 µA @ 800 V | 800 V | 30A | -40°C ~ 175°C | 1.29 V @ 30 A | |||
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Таблицы данных |
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VS-25F120DIODE GEN PURP 1.2KV 25A DO203AA |
3860 | 8.31 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 1200 V | 1200 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |||
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Таблицы данных |
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S2KTRDIODE GEN PURP 800V 2A SMB |
3191 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |||
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Таблицы данных |
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RL206GP-TPDIODE GEN PURP 800V 2A DO15 |
2377 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | - | 800 V | 2A | -55°C ~ 150°C | - | |||
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Таблицы данных |
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STPSC10H065G-TRDIODE SILICON 650V 10A D2PAK |
2313 | 3.70 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 480pF @ 0V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.75 V @ 10 A | |||
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Таблицы данных |
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1N5282DIODE GEN PURP 80V 200MA DO35 |
2432 | 0.04 |
ДобавитьРасследования |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 55 V | 80 V | 200mA | 175°C (Max) | 900 mV @ 100 mA |
Запрос котировок
