Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() |
MBR660F_T0_00001SCHOTTKY BARRIER RECTIFIERS |
3005 | 1.24 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 50 µA @ 60 V | 60 V | 6A | -65°C ~ 175°C | 750 mV @ 6 A | |||
![]() |
![]() |
PG606R_R2_00001GLASS PASSIVATED JUNCTION FAST S |
2593 | 0.71 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 4V, 1MHz | 250 ns | 1 µA @ 600 V | 600 V | 6A | -50°C ~ 150°C | 1.3 V @ 6 A | |||
![]() Таблицы данных |
![]() |
IDP15E65D2XKSA1DIODE GEN PURP 650V 15A TO220 |
3340 | 1.87 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 47 ns | 40 µA @ 650 V | 650 V | 15A | -40°C ~ 175°C | 2.3 V @ 15 A | |||
![]() Таблицы данных |
![]() |
DNA30E2200FEDIODE GEN PURP 2.2KV 30A I4PAC |
3951 | 6.71 |
ДобавитьРасследования |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 700V, 1MHz | - | 40 µA @ 2200 V | 2200 V | 30A | -55°C ~ 175°C | 1.25 V @ 30 A | |||
![]() |
![]() |
ER501_R2_00001GLASS PASSIVATED JUNCTION SUPERF |
3977 | 0.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 35 ns | 1 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A | |||
![]() Таблицы данных |
![]() |
IMBD4448-G3-18DIODE GEN PURP 75V 150MA SOT23 |
2029 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 2.5 µA @ 70 V | 75 V | 150mA | 150°C (Max) | 1 V @ 10 mA | |||
![]() |
![]() |
MBR690F_T0_00001SCHOTTKY BARRIER RECTIFIERS |
2216 | 1.24 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 50 µA @ 90 V | 90 V | 6A | -65°C ~ 175°C | 800 mV @ 6 A | |||
![]() |
![]() |
SVM1560UB_R2_00001EXTREME LOW VF SCHOTTKY RECTIFIE |
2995 | 0.91 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 850pF @ 4V, 1MHz | - | 320 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |||
![]() Таблицы данных |
![]() |
FESB16JT-E3/45DIODE GEN PURP 600V 16A TO263AB |
2323 | 1.87 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | |||
![]() Таблицы данных |
![]() |
VS-40HF20DIODE GEN PURP 200V 40A DO203AB |
2633 | 6.89 |
ДобавитьРасследования |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 200 V | 200 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |||
![]() Таблицы данных |
![]() |
IMBD4448-G3-08DIODE GEN PURP 75V 150MA SOT23 |
2194 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 2.5 µA @ 70 V | 75 V | 150mA | 150°C (Max) | 1 V @ 10 mA | |||
![]() |
![]() |
MBR6100F_T0_00001SCHOTTKY BARRIER RECTIFIERS |
3073 | 1.24 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 50 µA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 800 mV @ 6 A | |||
![]() Таблицы данных |
![]() |
VS-15ETH06FP-N3DIODE GEN PURP 600V 15A TO220FP |
2692 | 1.92 |
ДобавитьРасследования |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 29 ns | 40 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A | ||
![]() Таблицы данных |
![]() |
STPSC20065DIDIODE SCHOTTKY 650V 20A TO220AC |
3114 | 6.96 |
ДобавитьРасследования |
Tube | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1250pF @ 0V, 1MHz | 0 ns | 300 µA @ 650 V | 650 V | 20A | -40°C ~ 175°C | 1.45 V @ 20 A | ||
![]() Таблицы данных |
![]() |
BAS21WQ-7-FDIODE GEN PURP 200V 200MA SOT323 |
3494 | 0.05 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA | -65°C ~ 150°C | 1.25 V @ 200 mA | ||
![]() |
![]() |
MBR6150F_T0_00001SCHOTTKY BARRIER RECTIFIERS |
2128 | 1.24 |
ДобавитьРасследования |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 50 µA @ 150 V | 150 V | 6A | -65°C ~ 175°C | 900 mV @ 6 A | |||
![]() |
![]() |
BD5200S_S2_00001SURFACE MOUNT SCHOTTKY BARRIER R |
2157 | 0.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 200 V | 200 V | 5A | -65°C ~ 175°C | 900 mV @ 5 A | |||
![]() Таблицы данных |
![]() |
IDDD06G65C6XTMA1SIC DIODES |
2403 | 1.92 |
ДобавитьРасследования |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 302pF @ 1V, 1MHz | 0 ns | 20 µA @ 420 V | 650 V | 18A (DC) | -55°C ~ 175°C | - | ||
![]() Таблицы данных |
![]() |
1N5284FED .24 MA DO35 |
3545 | 2.50 |
ДобавитьРасследования |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 264mA (DC) | -55°C ~ 200°C | 1 V @ 211.2 mA | |||
![]() Таблицы данных |
|
STPSC20065WYDIODE SCHOTTKY 650V 20A DO247 |
2515 | 6.96 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1250pF @ 0V, 1MHz | 0 ns | 300 µA @ 650 V | 650 V | 20A | -40°C ~ 175°C | 1.45 V @ 20 A |