Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	TRS6E65F,S1Q DODE SCHOTTKY 650V TO220 Toshiba Semiconductor and Storage	2670	2.98	- + Добавить Расследования	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	22pF @ 650V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A (DC)	175°C (Max)	1.6 V @ 6 A
Таблицы данных	1N1184 DIODE GEN PURP 100V 35A DO5 GeneSiC Semiconductor	2181	13.04	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	100 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
Таблицы данных	SK22ATR DIODE SCHOTTKY 20V 2A SMA SMC Diode Solutions	3722	0.05	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	250pF @ 4V, 1MHz	-	1 mA @ 20 V	20 V	2A	-55°C ~ 125°C	550 mV @ 2 A
Таблицы данных	1N5391-E3/54 DIODE GEN PURP 50V 1.5A DO204AL Vishay General Semiconductor - Diodes Division	3251	0.05	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 50 V	50 V	1.5A	-50°C ~ 150°C	1.4 V @ 1.5 A
Таблицы данных	DSEP12-12A DIODE GEN PURP 1.2KV 15A TO220AC IXYS	3089	2.35	- + Добавить Расследования	Tube	HiPerFRED™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	100 µA @ 1200 V	1200 V	15A	-55°C ~ 175°C	2.75 V @ 15 A
Таблицы данных	1N4151WS-G3-08 DIODE GEN PURP 50V 150MA SOD323 Vishay General Semiconductor - Diodes Division	3692	0.04	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	4 ns	50 nA @ 50 V	50 V	150mA	-55°C ~ 150°C	1 V @ 50 mA
Таблицы данных	C4D02120A DIODE SCHOTTKY 1.2KV 2A TO220-2 Wolfspeed, Inc.	3195	2.99	- + Добавить Расследования	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	167pF @ 0V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.8 V @ 2 A
Таблицы данных	AIDW30S65C5XKSA1 DIODE SCHOTTKY 650V 30A TO247 Infineon Technologies	2900	9.93	- + Добавить Расследования	Tube	Automotive, AEC-Q100/101, CoolSiC™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	860pF @ 1V, 1MHz	0 ns	120 µA @ 650 V	650 V	30A (DC)	-40°C ~ 175°C	1.7 V @ 30 A
Таблицы данных	1N4006G R0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	2912	0.05	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1 V @ 1 A
Таблицы данных	1N5396-E3/54 DIODE GEN PURP 500V 1.5A DO204AL Vishay General Semiconductor - Diodes Division	3861	0.05	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	2 µs	5 µA @ 500 V	500 V	1.5A	-50°C ~ 150°C	1.4 V @ 1.5 A
Таблицы данных	STTH12R06G DIODE GEN PURP 600V 12A D2PAK STMicroelectronics	2571	2.35	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	45 ns	45 µA @ 600 V	600 V	12A	175°C (Max)	2.9 V @ 12 A
Таблицы данных	1N4003B-G DIODE GEN PURP 200V 1A DO41 Comchip Technology	3270	0.04	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
Таблицы данных	D4015L56TP DIODE GEN PURP 400V 9.5A TO220 Littelfuse Inc.	2635	3.03	- + Добавить Расследования	Tube	Teccor®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	10 µA @ 400 V	400 V	9.5A	-40°C ~ 125°C	1.6 V @ 9.5 A
Таблицы данных	VS-16FL100S05 DIODE GEN PURP 1KV 16A DO203AA Vishay General Semiconductor - Diodes Division	3817	9.98	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	500 ns	50 µA @ 1000 V	1000 V	16A	-65°C ~ 150°C	1.4 V @ 16 A
Таблицы данных	BAS19W RVG DIODE GEN PURP 100V 200MA SOT323 Taiwan Semiconductor Corporation	3369	0.05	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 100 V	100 V	200mA	-55°C ~ 150°C	1.25 V @ 100 mA
Таблицы данных	XBW1SS400-G SWITCHING DIODE Torex Semiconductor Ltd	2937	0.05	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	0.5pF @ 0V, 1MHz	4 ns	100 nA @ 80 V	80 V	100mA	150°C	1.2 V @ 100 mA
Таблицы данных	DSEP12-12B DIODE GEN PURP 1.2KV 15A TO220AC IXYS	2578	2.35	- + Добавить Расследования	Tube	HiPerFRED™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	100 µA @ 1200 V	1200 V	15A	-55°C ~ 175°C	3.25 V @ 15 A
Таблицы данных	1N4005B-G DIODE GEN PURP 600V 1A DO41 Comchip Technology	2082	0.04	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
Таблицы данных	RHRG3060-F085 DIODE GEN PURP 600V 30A TO247-2 onsemi	2673	3.12	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	250 µA @ 600 V	600 V	30A	-55°C ~ 175°C	2.1 V @ 30 A
Таблицы данных	VS-25FR120 DIODE GEN PURP 1.2KV 25A DO203AA Vishay General Semiconductor - Diodes Division	3121	10.25	- + Добавить Расследования	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	12 mA @ 1200 V	1200 V	25A	-65°C ~ 175°C	1.3 V @ 78 A

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