Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-15EWX06FNTRR-M3

Таблицы данных

VS-15EWX06FNTRR-M3

VS-15EWX06FNTRR-M3

DIODE GEN PURP 600V 15A D-PAK

Vishay General Semiconductor - Diodes Division

2971 0.62
- +

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Расследования

Tape & Reel (TR) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 22 ns 50 µA @ 600 V 600 V 15A -65°C ~ 175°C 3.2 V @ 15 A
VS-85HFL20S05

Таблицы данных

VS-85HFL20S05

VS-85HFL20S05

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division

3488 14.67
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 200 V 200 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
VFT3080S-E3/4W

Таблицы данных

VFT3080S-E3/4W

VFT3080S-E3/4W

DIODE SCHOTTKY 30A 80V ITO-220AB

Vishay General Semiconductor - Diodes Division

2528 0.62
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 80 V 80 V 30A -55°C ~ 150°C 950 mV @ 30 A
1N5821US/TR 1N5821US/TR

1N5821US/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

2173 14.69
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 30 V 30 V 3A -65°C ~ 125°C 500 mV @ 3 A
RFV8TG6SGC9

Таблицы данных

RFV8TG6SGC9

RFV8TG6SGC9

DIODE GEN PURP 600V 8A TO220AC

Rohm Semiconductor

993 1.36
- +

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Tube,Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 10 µA @ 600 V 600 V 8A 150°C (Max) 2.8 V @ 8 A
1N5802US

Таблицы данных

1N5802US

1N5802US

DIODE GEN PURP 50V 1.1A

Semtech Corporation

3283 14.70
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 5V, 1MHz 25 ns 1 µA @ 50 V 50 V 1.1A - 875 mV @ 1 A
S5D V7G

Таблицы данных

S5D V7G

S5D V7G

DIODE GEN PURP 200V 5A DO214AB

Taiwan Semiconductor Corporation

3509 1.08
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 200 V 200 V 5A -55°C ~ 150°C 1.15 V @ 5 A
1N5804US

Таблицы данных

1N5804US

1N5804US

DIODE GEN PURP 100V 1.1A

Semtech Corporation

3894 14.70
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 5V, 1MHz 25 ns 1 µA @ 100 V 100 V 1.1A - 875 mV @ 1 A
S5J V7G

Таблицы данных

S5J V7G

S5J V7G

DIODE GEN PURP 600V 5A DO214AB

Taiwan Semiconductor Corporation

3621 0.62
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.15 V @ 5 A
1N5806US

Таблицы данных

1N5806US

1N5806US

DIODE GEN PURP 150V 1.1A

Semtech Corporation

2424 14.70
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 5V, 1MHz 25 ns 1 µA @ 150 V 150 V 1.1A - 875 mV @ 1 A
SDT20B60VCT

Таблицы данных

SDT20B60VCT

SDT20B60VCT

SCHOTTKY RECTIFIER TO220AB

Diodes Incorporated

3255 0.62
- +

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Расследования

Tube RoHS - - Active - - - - - - - -
JANTXV1N5620US JANTXV1N5620US

JANTXV1N5620US

RECTIFIER

Microchip Technology

3005 14.70
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Расследования

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs - 800 V 1A -65°C ~ 200°C 1.3 V @ 3 A
SDT20B60VCTFP SDT20B60VCTFP

SDT20B60VCTFP

SCHOTTKY RECTIFIER ITO-220AB

Diodes Incorporated

3260 0.62
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 10A -55°C ~ 150°C 600 mV @ 10 A
JANTX1N6630/TR JANTX1N6630/TR

JANTX1N6630/TR

RECTIFIER UFR,FRR

Microchip Technology

3285 14.70
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 10V, 1MHz 50 ns 2 µA @ 990 V 900 V 3A -65°C ~ 175°C 1.7 V @ 3 A
BYWF29-100-E3/45

Таблицы данных

BYWF29-100-E3/45

BYWF29-100-E3/45

DIODE GEN PURP 100V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

2645 0.62
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 100 V 100 V 8A -65°C ~ 150°C 1.3 V @ 20 A
1N3647 1N3647

1N3647

STANDARD RECTIFIER

Microchip Technology

3368 14.75
- +

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Расследования

Bulk Military, MIL-PRF-19500/279 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 3000 V - 250mA -65°C ~ 150°C 5 V @ 250 mA
BYWF29-150-E3/45

Таблицы данных

BYWF29-150-E3/45

BYWF29-150-E3/45

DIODE GEN PURP 150V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

2906 0.62
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 150 V 150 V 8A -65°C ~ 150°C 1.3 V @ 20 A
VS-85HFL40S05

Таблицы данных

VS-85HFL40S05

VS-85HFL40S05

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

2427 14.77
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 400 V 400 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
BYWF29-50-E3/45

Таблицы данных

BYWF29-50-E3/45

BYWF29-50-E3/45

DIODE GEN PURP 50V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

3415 0.62
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 50 V 50 V 8A -65°C ~ 150°C 1.3 V @ 20 A
VS-85HFLR40S05

Таблицы данных

VS-85HFLR40S05

VS-85HFLR40S05

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

3793 14.77
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 400 V 400 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
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