Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
FESB8BT-E3/45

Таблицы данных

FESB8BT-E3/45

FESB8BT-E3/45

DIODE GEN PURP 100V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2549 0.61
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 950 mV @ 8 A
JANTX1N6631 JANTX1N6631

JANTX1N6631

RECTIFIER

Microchip Technology

3134 14.45
- +

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Расследования

Bulk Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 10V, 1MHz 60 ns 4 µA @ 1000 V - 2A -65°C ~ 175°C 1.95 V @ 2 A
FESB8DT-E3/45

Таблицы данных

FESB8DT-E3/45

FESB8DT-E3/45

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2026 0.61
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 950 mV @ 8 A
UES1105E3/TR UES1105E3/TR

UES1105E3/TR

RECTIFIER UFR,FRR

Microchip Technology

2725 14.45
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 300 V 300 V 1A -55°C ~ 150°C 1.25 V @ 1 A
GIB1402-E3/45

Таблицы данных

GIB1402-E3/45

GIB1402-E3/45

DIODE GEN PURP 100V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3549 0.61
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 100 V 100 V 8A -65°C ~ 150°C 975 mV @ 8 A
1N6540 1N6540

1N6540

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

3570 14.46
- +

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Bulk RoHS - - Active - - - - - - - -
VS-15ETL06S-M3

Таблицы данных

VS-15ETL06S-M3

VS-15ETL06S-M3

DIODE GEN PURP 600V 15A TO263AB

Vishay General Semiconductor - Diodes Division

3203 0.61
- +

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Расследования

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 270 ns 10 µA @ 600 V 600 V 15A -65°C ~ 175°C 1.05 V @ 15 A
1N6625E3/TR 1N6625E3/TR

1N6625E3/TR

RECTIFIER UFR,FRR

Microchip Technology

3305 14.46
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 80 ns 1 µA @ 1 V 1.1 V 1A -65°C ~ 150°C 1.95 V @ 1.5 A
UPR10E3/TR13

Таблицы данных

UPR10E3/TR13

UPR10E3/TR13

DIODE GEN PURP 100V 2.5A DO216

Microchip Technology

2915 0.62
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 2 µA @ 100 V 100 V 2.5A -55°C ~ 150°C 975 mV @ 2 A
JANTX1N6622US/TR JANTX1N6622US/TR

JANTX1N6622US/TR

RECTIFIER UFR,FRR

Microchip Technology

2661 14.46
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 30 ns 500 nA @ 660 V 660 V 2A -65°C ~ 150°C 1.4 V @ 1.2 A
UPR15E3/TR13

Таблицы данных

UPR15E3/TR13

UPR15E3/TR13

DIODE GEN PURP 150V 2.5A DO216

Microchip Technology

2562 0.62
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 2 µA @ 150 V 150 V 2.5A -55°C ~ 150°C 975 mV @ 2 A
S85V

Таблицы данных

S85V

S85V

DIODE GEN PURP 1.4KV 85A DO5

GeneSiC Semiconductor

2824 14.48
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1400 V 85A -65°C ~ 150°C 1.1 V @ 85 A
UPR5E3/TR13

Таблицы данных

UPR5E3/TR13

UPR5E3/TR13

DIODE GEN PURP 50V 2.5A DO216

Microchip Technology

2436 0.62
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 2 µA @ 50 V 50 V 2.5A -55°C ~ 150°C 975 mV @ 2 A
PF8

Таблицы данных

PF8

PF8

DIODE GEN PURP 800V 850MA AXIAL

Semtech Corporation

3709 14.49
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 18pF @ 5V, 1MHz 300 ns 1 µA @ 800 V 800 V 850mA - 1.35 V @ 1.5 A
6A20G 6A20G

6A20G

6A, 200V, STANDARD RECOVERY RECT

Taiwan Semiconductor Corporation

3237 1.35
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
PF0

Таблицы данных

PF0

PF0

DIODE GEN PURP 1KV 850MA AXIAL

Semtech Corporation

3058 14.49
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 18pF @ 5V, 1MHz 300 ns 1 µA @ 1000 V 1000 V 850mA - 1.35 V @ 1.5 A
FCQS10A065

Таблицы данных

FCQS10A065

FCQS10A065

DIODE SCHOTTKY 65V 10A TO-220 FU

KYOCERA AVX

3576 0.62
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 400 µA @ 65 V 65 V 10A -40°C ~ 150°C 610 mV @ 5 A
PM6

Таблицы данных

PM6

PM6

DIODE GEN PURP 600V 2A AXIAL

Semtech Corporation

2709 14.49
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 18pF @ 4V, 1MHz 3 µs 1 mA @ 600 V 600 V 2A - 1 V @ 1 A
FCQS10A045

Таблицы данных

FCQS10A045

FCQS10A045

DIODE SCHOTTKY 45V 10A TO-220 FU

KYOCERA AVX

2817 0.62
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 350 µA @ 45 V 45 V 10A -40°C ~ 150°C 570 mV @ 5 A
PM8

Таблицы данных

PM8

PM8

DIODE GEN PURP 800V 1A AXIAL

Semtech Corporation

3957 14.49
- +

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Расследования

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 5V, 1MHz 3 µs 1 µA @ 800 V 800 V 1A - 2.1 V @ 1 A
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