Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-85HFLR60S05

Таблицы данных

VS-85HFLR60S05

VS-85HFLR60S05

DIODE GEN PURP 600V 85A DO203AB

Vishay General Semiconductor - Diodes Division

2756 15.19
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 600 V 600 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
FR607GP-TP

Таблицы данных

FR607GP-TP

FR607GP-TP

DIODE GPP FAST 6A R-6

Micro Commercial Co

3722 0.63
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 500 ns - 1000 V 6A -55°C ~ 150°C -
VS-71HF140

Таблицы данных

VS-71HF140

VS-71HF140

DIODE GEN PURP 1.4KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

2344 15.19
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 4.5 mA @ 1400 V 1400 V 70A -65°C ~ 150°C 1.46 V @ 220 A
SK520C V7G

Таблицы данных

SK520C V7G

SK520C V7G

DIODE SCHOTTKY 5A 200V DO-214AB

Taiwan Semiconductor Corporation

2550 0.63
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 300 µA @ 200 V 200 V 5A -55°C ~ 150°C 950 mV @ 5 A
VS-71HFR140

Таблицы данных

VS-71HFR140

VS-71HFR140

DIODE GEN PURP 1.4KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

3720 15.19
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 4.5 mA @ 1400 V 1400 V 70A -65°C ~ 150°C 1.46 V @ 220 A
TSPB15U45S S2G

Таблицы данных

TSPB15U45S S2G

TSPB15U45S S2G

DIODE SCHOTTKY 45V 15A SMPC4.0

Taiwan Semiconductor Corporation

2949 0.63
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 45 V 45 V 15A -55°C ~ 150°C 560 mV @ 15 A
JANHCE1N5806 JANHCE1N5806

JANHCE1N5806

RECTIFIER UFR,FRR

Microchip Technology

3587 15.20
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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 1A -65°C ~ 175°C 875 mV @ 1 A
TSPB15U50S S2G

Таблицы данных

TSPB15U50S S2G

TSPB15U50S S2G

DIODE SCHOTTKY 50V 15A SMPC4.0

Taiwan Semiconductor Corporation

3088 0.63
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 2 mA @ 50 V 50 V 15A -55°C ~ 150°C 560 mV @ 15 A
JANHCE1N5804 JANHCE1N5804

JANHCE1N5804

RECTIFIER UFR,FRR

Microchip Technology

2677 15.20
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Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 100 V 100 V 1A -65°C ~ 175°C 875 mV @ 1 A
V35PW15-M3/I

Таблицы данных

V35PW15-M3/I

V35PW15-M3/I

DIODE SCHOTTKY 150V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

2123 0.63
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1620pF @ 4V, 1MHz - 250 µA @ 150 V 150 V 35A -40°C ~ 150°C 1.4 V @ 35 A
JANHCE1N5802 JANHCE1N5802

JANHCE1N5802

RECTIFIER UFR,FRR

Microchip Technology

2582 15.20
- +

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Bulk Military, MIL-PRF-19500/561 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 50 V 50 V 1A -65°C ~ 175°C 875 mV @ 1 A
SF1608G C0G

Таблицы данных

SF1608G C0G

SF1608G C0G

DIODE GEN PURP 600V 16A TO220AB

Taiwan Semiconductor Corporation

2544 0.63
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 16A -55°C ~ 150°C 1.7 V @ 8 A
JANTX1N6621U JANTX1N6621U

JANTX1N6621U

DIODE GEN PURP 400V 1.2A A-MELF

Microchip Technology

2972 15.21
- +

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Расследования

Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 500 nA @ 400 V 400 V 1.2A -65°C ~ 150°C 1.4 V @ 1.2 A
JAN1N4148-1

Таблицы данных

JAN1N4148-1

JAN1N4148-1

DIODE GEN PURP 75V 200MA DO35

Microchip Technology

3230 0.63
- +

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Расследования

Bulk Military, MIL-PRF-19500/116 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 20 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 175°C 1.2 V @ 100 mA
JANTXV1N5819-1/TR JANTXV1N5819-1/TR

JANTXV1N5819-1/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

3231 15.21
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/586 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 70pF @ 5V, 1MHz - 50 µA @ 45 V 45 V 1A -65°C ~ 125°C 490 mV @ 1 A
RFV8TJ6SGC9

Таблицы данных

RFV8TJ6SGC9

RFV8TJ6SGC9

DIODE GEN PURP 600V 8A TO220ACFP

Rohm Semiconductor

993 1.39
- +

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Расследования

Tube,Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 10 µA @ 600 V 600 V 8A 150°C (Max) 2.8 V @ 8 A
1N6074US

Таблицы данных

1N6074US

1N6074US

DIODE GEN PURP 100V 3A D5A

Microchip Technology

2466 15.24
- +

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Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 1 µA @ 100 V 100 V 3A -65°C ~ 155°C 2.04 V @ 9.4 A
V20150SG-E3/4W

Таблицы данных

V20150SG-E3/4W

V20150SG-E3/4W

DIODE SCHOTTKY 150V 20A TO220AB

Vishay General Semiconductor - Diodes Division

2639 0.63
- +

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Расследования

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 150 V 150 V 20A -55°C ~ 150°C 1.6 V @ 20 A
JANTX1N6621/TR JANTX1N6621/TR

JANTX1N6621/TR

RECTIFIER UFR,FRR

Microchip Technology

3794 15.27
- +

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Расследования

Tape & Reel (TR) Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 10V, 1MHz 30 ns 500 nA @ 440 V 440 V 2A -65°C ~ 150°C 1.4 V @ 1.2 A
FESF8AT-E3/45

Таблицы данных

FESF8AT-E3/45

FESF8AT-E3/45

DIODE GEN PURP 50V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

3056 0.63
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 950 mV @ 8 A
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