Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SFT15GHR0G

Таблицы данных

SFT15GHR0G

SFT15GHR0G

DIODE GEN PURP 300V 1A TS-1

Taiwan Semiconductor Corporation

2521 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 1A -55°C ~ 150°C 1.3 V @ 1 A
ESH3D-E3/9AT

Таблицы данных

ESH3D-E3/9AT

ESH3D-E3/9AT

DIODE GEN PURP 200V 3A DO214AB

Vishay General Semiconductor - Diodes Division

2643 0.32
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 40 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C 900 mV @ 3 A
SFT16GHR0G

Таблицы данных

SFT16GHR0G

SFT16GHR0G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3651 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MURS320-E3/9AT

Таблицы данных

MURS320-E3/9AT

MURS320-E3/9AT

DIODE GEN PURP 200V 3A DO214AB

Vishay General Semiconductor - Diodes Division

2328 0.32
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 200 V 200 V 3A -65°C ~ 175°C 875 mV @ 3 A
SFT18GHR0G

Таблицы данных

SFT18GHR0G

SFT18GHR0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

2688 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
ESH3B-E3/57T

Таблицы данных

ESH3B-E3/57T

ESH3B-E3/57T

DIODE GEN PURP 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division

2455 0.32
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 40 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 900 mV @ 3 A
ES1AHE3_A/I

Таблицы данных

ES1AHE3_A/I

ES1AHE3_A/I

DIODE GEN PURP 50V 1A DO214AC

Vishay General Semiconductor - Diodes Division

2210 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 25 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 920 mV @ 1 A
ESH3C-E3/57T

Таблицы данных

ESH3C-E3/57T

ESH3C-E3/57T

DIODE GEN PURP 150V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3685 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 40 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C 900 mV @ 3 A
ES1BHE3_A/I

Таблицы данных

ES1BHE3_A/I

ES1BHE3_A/I

DIODE GEN PURP 100V 1A DO214AC

Vishay General Semiconductor - Diodes Division

3796 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 25 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 920 mV @ 1 A
ESH3BHE3_A/H

Таблицы данных

ESH3BHE3_A/H

ESH3BHE3_A/H

DIODE GEN PURP 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3923 0.32
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 70pF @ 4V, 1MHz 40 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 900 mV @ 3 A
ES1CHE3_A/I

Таблицы данных

ES1CHE3_A/I

ES1CHE3_A/I

DIODE GEN PURP 150V 1A DO214AC

Vishay General Semiconductor - Diodes Division

2227 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 25 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 920 mV @ 1 A
ESH3BHE3_A/I

Таблицы данных

ESH3BHE3_A/I

ESH3BHE3_A/I

DIODE GEN PURP 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3369 0.32
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 70pF @ 4V, 1MHz 40 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 900 mV @ 3 A
UF4005-M3/73

Таблицы данных

UF4005-M3/73

UF4005-M3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2161 0.11
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
ESH3CHE3_A/H

Таблицы данных

ESH3CHE3_A/H

ESH3CHE3_A/H

DIODE GEN PURP 150V 3A DO214AB

Vishay General Semiconductor - Diodes Division

2699 0.32
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 70pF @ 4V, 1MHz 40 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C 900 mV @ 3 A
UF4006-M3/73

Таблицы данных

UF4006-M3/73

UF4006-M3/73

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3012 0.11
- +

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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
ESH3CHE3_A/I

Таблицы данных

ESH3CHE3_A/I

ESH3CHE3_A/I

DIODE GEN PURP 150V 3A DO214AB

Vishay General Semiconductor - Diodes Division

2963 0.32
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 70pF @ 4V, 1MHz 40 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C 900 mV @ 3 A
SF2L8G R0G

Таблицы данных

SF2L8G R0G

SF2L8G R0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

3781 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
ESH3DHE3_A/I

Таблицы данных

ESH3DHE3_A/I

ESH3DHE3_A/I

DIODE GEN PURP 200V 3A DO214AB

Vishay General Semiconductor - Diodes Division

2014 0.32
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 70pF @ 4V, 1MHz 40 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C 900 mV @ 3 A
SK110B M4G

Таблицы данных

SK110B M4G

SK110B M4G

DIODE SCHOTTKY 100V 1A DO214AA

Taiwan Semiconductor Corporation

2728 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 1A -55°C ~ 150°C 850 mV @ 1 A
MURS320HE3_A/I

Таблицы данных

MURS320HE3_A/I

MURS320HE3_A/I

DIODE GEN PURP 200V 4A DO214AB

Vishay General Semiconductor - Diodes Division

3599 0.32
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 200 V 200 V 4A -65°C ~ 175°C 890 mV @ 4 A
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