Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
UG1A-E3/54

Таблицы данных

UG1A-E3/54

UG1A-E3/54

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3283 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
SB1230-TP SB1230-TP

SB1230-TP

DIODE SCHOTTKY 3A DO-201AD

Micro Commercial Co

2476 0.32
- +

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Расследования

- RoHS - - Last Time Buy - - - - - - - -
UG1C-E3/54

Таблицы данных

UG1C-E3/54

UG1C-E3/54

DIODE GEN PURP 150V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2533 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
SGL41-20-E3/97

Таблицы данных

SGL41-20-E3/97

SGL41-20-E3/97

DIODE SCHOTTKY 20V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3235 0.32
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 1A -55°C ~ 125°C 500 mV @ 1 A
BYG10K-E3/TR

Таблицы данных

BYG10K-E3/TR

BYG10K-E3/TR

DIODE AVALANCHE 800V 1.5A

Vishay General Semiconductor - Diodes Division

2577 0.11
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 4 µs 1 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
SGL41-30-E3/97

Таблицы данных

SGL41-30-E3/97

SGL41-30-E3/97

DIODE SCHOTTKY 30V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3178 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 500 mV @ 1 A
MUR105SHM4G

Таблицы данных

MUR105SHM4G

MUR105SHM4G

DIODE GEN PURP 50V 1A DO214AA

Taiwan Semiconductor Corporation

2160 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 2 µA @ 50 V 50 V 1A -55°C ~ 175°C 875 mV @ 1 A
V10P8HM3_A/I

Таблицы данных

V10P8HM3_A/I

V10P8HM3_A/I

DIODE SCHOTTKY 80V 10A TO277A

Vishay General Semiconductor - Diodes Division

3266 0.32
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Расследования

Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 800 µA @ 80 V 80 V 10A -40°C ~ 150°C 680 mV @ 10 A
MUR110SHM4G

Таблицы данных

MUR110SHM4G

MUR110SHM4G

DIODE GEN PURP 100V 1A DO214AA

Taiwan Semiconductor Corporation

3851 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 2 µA @ 100 V 100 V 1A -55°C ~ 175°C 875 mV @ 1 A
AR3PD-M3/87A

Таблицы данных

AR3PD-M3/87A

AR3PD-M3/87A

DIODE AVALANCHE 200V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

3455 0.32
- +

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Расследования

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 44pF @ 4V, 1MHz 140 ns 10 µA @ 200 V 200 V 1.8A (DC) -55°C ~ 175°C 1.6 V @ 3 A
MUR115SHM4G

Таблицы данных

MUR115SHM4G

MUR115SHM4G

DIODE GEN PURP 150V 1A DO214AA

Taiwan Semiconductor Corporation

3722 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 2 µA @ 150 V 150 V 1A -55°C ~ 175°C 875 mV @ 1 A
AR3PG-M3/87A

Таблицы данных

AR3PG-M3/87A

AR3PG-M3/87A

DIODE AVALANCHE 400V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

2248 0.32
- +

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Расследования

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 44pF @ 4V, 1MHz 140 ns 10 µA @ 400 V 400 V 1.8A (DC) -55°C ~ 175°C 1.6 V @ 3 A
MUR120SHM4G

Таблицы данных

MUR120SHM4G

MUR120SHM4G

DIODE GEN PURP 200V 1A DO214AA

Taiwan Semiconductor Corporation

2070 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 2 µA @ 200 V 200 V 1A -55°C ~ 175°C 875 mV @ 1 A
AR3PJ-M3/87A

Таблицы данных

AR3PJ-M3/87A

AR3PJ-M3/87A

DIODE AVALANCHE 600V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

3609 0.32
- +

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Расследования

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 44pF @ 4V, 1MHz 140 ns 10 µA @ 600 V 600 V 1.8A (DC) -55°C ~ 175°C 1.6 V @ 3 A
MUR140SHM4G

Таблицы данных

MUR140SHM4G

MUR140SHM4G

DIODE GEN PURP 400V 1A DO214AA

Taiwan Semiconductor Corporation

3833 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.25 V @ 1 A
AR3PJ-M3/86A

Таблицы данных

AR3PJ-M3/86A

AR3PJ-M3/86A

DIODE AVALANCHE 600V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

2340 0.32
- +

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Расследования

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 44pF @ 4V, 1MHz 140 ns 10 µA @ 600 V 600 V 1.8A (DC) -55°C ~ 175°C 1.6 V @ 3 A
MUR160SHM4G

Таблицы данных

MUR160SHM4G

MUR160SHM4G

DIODE GEN PURP 600V 1A DO214AA

Taiwan Semiconductor Corporation

2201 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
AR3PG-M3/86A

Таблицы данных

AR3PG-M3/86A

AR3PG-M3/86A

DIODE AVALANCHE 400V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

3986 0.32
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 44pF @ 4V, 1MHz 140 ns 10 µA @ 400 V 400 V 1.8A (DC) -55°C ~ 175°C 1.6 V @ 3 A
VS-MBRS130-M3/5BT

Таблицы данных

VS-MBRS130-M3/5BT

VS-MBRS130-M3/5BT

DIODE SCHOTTKY 30V 1A SMB

Vishay General Semiconductor - Diodes Division

3326 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 200pF @ 5V, 1MHz - 1 mA @ 30 V 30 V 1A -55°C ~ 125°C 420 mV @ 1 A
S5B S5B

S5B

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation

2674 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 1.15 V @ 5 A
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