Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SK315B M4G

Таблицы данных

SK315B M4G

SK315B M4G

DIODE SCHOTTKY 150V 3A DO214AA

Taiwan Semiconductor Corporation

3388 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
S15MC S15MC

S15MC

DIODE GEN PURP 1KV 15A DO214AB

Taiwan Semiconductor Corporation

2922 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 15A (DC) -55°C ~ 150°C 1.1 V @ 15 A
RMPG06DHE3_A/73

Таблицы данных

RMPG06DHE3_A/73

RMPG06DHE3_A/73

DIODE GEN PURP 200V 1A MPG06

Vishay General Semiconductor - Diodes Division

2444 0.11
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 6.6pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S15KC S15KC

S15KC

DIODE GEN PURP 800V 15A DO214AB

Taiwan Semiconductor Corporation

3453 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 800 V 800 V 15A (DC) -55°C ~ 150°C 1.1 V @ 15 A
RMPG06GHE3_A/73

Таблицы данных

RMPG06GHE3_A/73

RMPG06GHE3_A/73

DIODE GEN PURP 400V 1A MPG06

Vishay General Semiconductor - Diodes Division

3934 0.11
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 6.6pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S15JC S15JC

S15JC

DIODE GEN PURP 600V 15A DO214AB

Taiwan Semiconductor Corporation

3311 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 15A (DC) -55°C ~ 150°C 1.1 V @ 15 A
RMPG06JHE3_A/73

Таблицы данных

RMPG06JHE3_A/73

RMPG06JHE3_A/73

DIODE GEN PURP 600V 1A MPG06

Vishay General Semiconductor - Diodes Division

2752 0.11
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 6.6pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S15GC S15GC

S15GC

DIODE GEN PURP 400V 15A DO214AB

Taiwan Semiconductor Corporation

3827 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 15A (DC) -55°C ~ 150°C 1.1 V @ 15 A
SK13B M4G

Таблицы данных

SK13B M4G

SK13B M4G

DIODE SCHOTTKY 30V 1A DO214AA

Taiwan Semiconductor Corporation

2877 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 500 mV @ 1 A
RG 10AV

Таблицы данных

RG 10AV

RG 10AV

DIODE GEN PURP 600V 1A AXIAL

Sanken

2908 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 500 µA @ 600 V 600 V 1A -40°C ~ 150°C 2 V @ 1 A
SK14B M4G

Таблицы данных

SK14B M4G

SK14B M4G

DIODE SCHOTTKY 40V 1A DO214AA

Taiwan Semiconductor Corporation

3906 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 1A -55°C ~ 125°C 500 mV @ 1 A
RG 2AV

Таблицы данных

RG 2AV

RG 2AV

DIODE GEN PURP 600V 1A AXIAL

Sanken

2808 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 500 µA @ 600 V 600 V 1A -40°C ~ 150°C 2 V @ 1 A
SK16B M4G

Таблицы данных

SK16B M4G

SK16B M4G

DIODE SCHOTTKY 60V 1A DO214AA

Taiwan Semiconductor Corporation

2322 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 1A -55°C ~ 150°C 750 mV @ 1 A
RM 10BV

Таблицы данных

RM 10BV

RM 10BV

DIODE GEN PURP 800V 1.2A AXIAL

Sanken

3187 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 800 V 800 V 1.2A -40°C ~ 150°C 910 mV @ 1.5 A
CMG05(TE12L,Q,M)

Таблицы данных

CMG05(TE12L,Q,M)

CMG05(TE12L,Q,M)

DIODE GEN PURP 400V 1A M-FLAT

Toshiba Semiconductor and Storage

2969 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - - 10 µA @ 400 V 400 V 1A -40°C ~ 150°C 1.1 V @ 1 A
RU 2AMV

Таблицы данных

RU 2AMV

RU 2AMV

DIODE GEN PURP 600V 1.1A AXIAL

Sanken

3284 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 600 V 600 V 1.1A -40°C ~ 150°C 1.2 V @ 1.1 A
CRH02(TE85L,Q,M)

Таблицы данных

CRH02(TE85L,Q,M)

CRH02(TE85L,Q,M)

DIODE GEN PURP 200V 500MA S-FLAT

Toshiba Semiconductor and Storage

3513 0.11
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 200 V 200 V 500mA 150°C (Max) 950 mV @ 500 mA
RU 3BV

Таблицы данных

RU 3BV

RU 3BV

DIODE GEN PURP 800V 1.1A AXIAL

Sanken

3713 0.32
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 600 V 800 V 1.1A -40°C ~ 150°C 1.5 V @ 1 A
SURA8205T3G-VF01

Таблицы данных

SURA8205T3G-VF01

SURA8205T3G-VF01

DIODE GEN PURP 50V 2A SMA

onsemi

2026 0.11
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 2 µA @ 50 V 50 V 2A -65°C ~ 175°C 940 mV @ 2 A
RU 3CV

Таблицы данных

RU 3CV

RU 3CV

DIODE GEN PURP 1KV 1.5A AXIAL

Sanken

2990 0.32
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 1000 V 1000 V 1.5A -40°C ~ 150°C 2 V @ 1.5 A
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