Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SCS206AGHRC

Таблицы данных

SCS206AGHRC

SCS206AGHRC

DIODE SCHOTTKY 650V 6A TO-220-2

Rohm Semiconductor

935 4.56
- +

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Tube Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 219pF @ 1V, 1MHz 0 ns 120 µA @ 600 V 650 V 6A (DC) 175°C (Max) 1.55 V @ 6 A
BY254-CT

Таблицы данных

BY254-CT

BY254-CT

CUT-TAPE VERSION. STANDARD RECO

DComponents

1700 0.81
- +

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Strip RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 5 µA @ 800 V 800 V 3A -50°C ~ 150°C 1.1 V @ 3 A
SK110

Таблицы данных

SK110

SK110

Schottky D, 100V, 1.00A

DComponents

210000 0.09
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 100 V 100 V 1A -50°C ~ 150°C 850 mV @ 1 A
1N4006T/R

Таблицы данных

1N4006T/R

1N4006T/R

STD 1A, CASE TYPE: DO-41

EIC SEMICONDUCTOR INC.

40000 0.03
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 2 µs 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
HS3A V7G

Таблицы данных

HS3A V7G

HS3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

1614 1.02
- +

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Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1 V @ 3 A
1N5298

Таблицы данных

1N5298

1N5298

FED 1.1 MA DO35

Solid State Inc.

910 2.50
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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 100 V 1.21A (DC) -55°C ~ 200°C 1.4 V @ 968 mA
PCDP2065G1_T0_00001

Таблицы данных

PCDP2065G1_T0_00001

PCDP2065G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

2000 4.87
- +

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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 747pF @ 1V, 1MHz 0 ns 120 µA @ 650 V 650 V 20A (DC) -55°C ~ 175°C 1.7 V @ 20 A
SL1045

Таблицы данных

SL1045

SL1045

SCHOTTKY DIODE TO-277 45V 10A

NextGen Components

246000 0.82
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 45 V 45 V 10A - 450 mV @ 10 A
S2D

Таблицы данных

S2D

S2D

ST Rect, 200V, 2A

DComponents

123000 0.09
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 1.5 µs 5 µA @ 200 V 200 V 2A -50°C ~ 150°C 1.15 V @ 2 A
S4K V7G

Таблицы данных

S4K V7G

S4K V7G

DIODE GEN PURP 800V 4A DO214AB

Taiwan Semiconductor Corporation

1565 1.02
- +

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Cut Tape (CT),Digi-Reel® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 4A -55°C ~ 150°C 1.15 V @ 4 A
1N5308

Таблицы данных

1N5308

1N5308

FED 2.7 MA DO35

Solid State Inc.

860 2.50
- +

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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 100 V 2.97A (DC) -55°C ~ 200°C 2.15 V @ 2.376 A
TRS10A65F,S1Q TRS10A65F,S1Q

TRS10A65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=10

Toshiba Semiconductor and Storage

238 4.90
- +

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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 36pF @ 650V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A (DC) 175°C (Max) 1.6 V @ 10 A
ES3F

Таблицы данных

ES3F

ES3F

SF Rect, 300V, 3.00A, 25ns

DComponents

3000 0.82
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 5 µA @ 300 V 300 V 3A -50°C ~ 150°C 1.3 V @ 3 A
FRL1M

Таблицы данных

FRL1M

FRL1M

Fast Rect. 1000V, 1.00A, 500ns

DComponents

81000 0.09
- +

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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 500 ns 5 µA @ 1000 V 1000 V 1A -50°C ~ 150°C 1.3 V @ 1 A
HS3G V7G

Таблицы данных

HS3G V7G

HS3G V7G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

1072 1.02
- +

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Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5290

Таблицы данных

1N5290

1N5290

FED .47 MA DO35

Solid State Inc.

760 2.50
- +

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Box RoHS - Standard Active Through Hole - - - 100 V - -55°C ~ 200°C -
1N6662 1N6662

1N6662

RECT , .5AMP 400V DO7

Solid State Inc.

2261 4.95
- +

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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 400 V 500mA - -
MUR460-D1-0000

Таблицы данных

MUR460-D1-0000

MUR460-D1-0000

DIODE GEN PURP 600V 4A DO201AD

Yangzhou Yangjie Electronic Technology Co.,Ltd

1050 0.82
- +

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Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 51pF @ 4V, 1MHz 50 ns 2.5 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.28 V @ 4 A
S2B

Таблицы данных

S2B

S2B

ST Rect, 100V, 2A

DComponents

36000 0.09
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 1.5 µs 5 µA @ 100 V 100 V 2A -50°C ~ 150°C 1.15 V @ 2 A
BYC405X-400PQ BYC405X-400PQ

BYC405X-400PQ

DUAL HYPERFAST POWER DIODE

WeEn Semiconductors

4098 1.03
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 10 µA @ 400 V 400 V 10A 150°C 1.5 V @ 5 A
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