Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N4007

Таблицы данных

1N4007

1N4007

DIODE GEN PURP 1000V 1A DO-41

Rectron USA

239997 0.03
- +

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Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 200 nA @ 1000 V 1000 V 1A -55°C ~ 150°C 1 V @ 1 A
RFNL5BM6SFHTL

Таблицы данных

RFNL5BM6SFHTL

RFNL5BM6SFHTL

SUPER FAST RECOVERY DIODE (AEC-Q

Rohm Semiconductor

1877 0.97
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 60 ns 10 µA @ 600 V 600 V 5A 150°C (Max) 1.3 V @ 5 A
NXPSC10650B6J

Таблицы данных

NXPSC10650B6J

NXPSC10650B6J

DIODE SCHOTTKY 650V 10A D2PAK

WeEn Semiconductors

3190 6.48
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 300pF @ 1V, 1MHz 0 ns 250 µA @ 650 V 650 V 10A 175°C (Max) 1.7 V @ 10 A
FERD15S50SB-TR

Таблицы данных

FERD15S50SB-TR

FERD15S50SB-TR

DIODE RECT 50V 15A DPAK

STMicroelectronics

4578 0.98
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) FERD (Field Effect Rectifier Diode) Active Surface Mount - - 650 µA @ 50 V 50 V 15A 150°C (Max) 490 mV @ 15 A
S15GCHV7G

Таблицы данных

S15GCHV7G

S15GCHV7G

DIODE GEN PURP 400V 15A DO214AB

Taiwan Semiconductor Corporation

1690 0.98
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 15A -55°C ~ 150°C 1.1 V @ 15 A
PSDH6060L1_T0_00001

Таблицы данных

PSDH6060L1_T0_00001

PSDH6060L1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1494 2.30
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 205 ns 250 µA @ 600 V 600 V 60A -55°C ~ 150°C 1.75 V @ 60 A
NTE5962

Таблицы данных

NTE5962

NTE5962

R-400PRV 25A CATH CASE

NTE Electronics, Inc

411 4.11
- +

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Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 1 mA @ 400 V 400 V 25A -65°C ~ 175°C 1.7 V @ 57 A
1N5401T/R

Таблицы данных

1N5401T/R

1N5401T/R

STD 3A, CASE TYPE: DO-201AD

EIC SEMICONDUCTOR INC.

45000 0.08
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 28pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A (DC) -65°C ~ 175°C 950 mV @ 3 A
SK56C V7G

Таблицы данных

SK56C V7G

SK56C V7G

DIODE SCHOTTKY 5A 60V DO-214AB

Taiwan Semiconductor Corporation

1374 0.98
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 750 mV @ 5 A
PSDH6060S1_T0_00001

Таблицы данных

PSDH6060S1_T0_00001

PSDH6060S1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1470 2.30
- +

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Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 85 ns 250 µA @ 600 V 600 V 60A -55°C ~ 150°C 2.3 V @ 60 A
NTE5963

Таблицы данных

NTE5963

NTE5963

R-400PRV 25A ANODE CASE

NTE Electronics, Inc

116 4.11
- +

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Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 1 mA @ 400 V 400 V 25A -65°C ~ 175°C 1.7 V @ 57 A
FERD20U50DJF-TR

Таблицы данных

FERD20U50DJF-TR

FERD20U50DJF-TR

DIODE RECT 50V 20A POWERFLAT

STMicroelectronics

1364 0.98
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) FERD (Field Effect Rectifier Diode) Active Surface Mount - - 800 µA @ 50 V 50 V 20A 150°C (Max) 510 mV @ 20 A
BY12

Таблицы данных

BY12

BY12

HV DIODE D7.3X22 12000V 0.5A

Diotec Semiconductor

18000 2.33
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 1 µA @ 12000 V 12000 V 500mA -50°C ~ 150°C 10 V @ 500 mA
VS-E5PX7506L-N3

Таблицы данных

VS-E5PX7506L-N3

VS-E5PX7506L-N3

75A, 600V, "X" SERIES FRED PT IN

Vishay General Semiconductor - Diodes Division

890 4.15
- +

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Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 48 ns 25 µA @ 600 V 600 V 75A -55°C ~ 175°C 2.2 V @ 75 A
S15MCHV7G

Таблицы данных

S15MCHV7G

S15MCHV7G

DIODE GEN PURP 1KV 15A DO214AB

Taiwan Semiconductor Corporation

1287 0.98
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 15A -55°C ~ 150°C 1.1 V @ 15 A
VS-E5PH7506L-N3

Таблицы данных

VS-E5PH7506L-N3

VS-E5PH7506L-N3

75A, 600V, "H" SERIES FRED PT IN

Vishay General Semiconductor - Diodes Division

487 4.15
- +

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Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 57 ns 25 µA @ 600 V 600 V 75A -55°C ~ 175°C 1.7 V @ 75 A
1N5402T/R

Таблицы данных

1N5402T/R

1N5402T/R

STD 3A, CASE TYPE: DO-201AD

EIC SEMICONDUCTOR INC.

23750 0.08
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 28pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A (DC) -65°C ~ 175°C 950 mV @ 3 A
DR204T/R

Таблицы данных

DR204T/R

DR204T/R

DIODE GEN PURP 400V 2A DO15

EIC SEMICONDUCTOR INC.

15000 0.06
- +

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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 75pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 2A (DC) -65°C ~ 175°C 1 V @ 2 A
SR515 A0G

Таблицы данных

SR515 A0G

SR515 A0G

DIODE SCHOTTKY 150V 5A DO201AD

Taiwan Semiconductor Corporation

2263 0.99
- +

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Расследования

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 5A -55°C ~ 150°C 1.05 V @ 5 A
S3D10065I

Таблицы данных

S3D10065I

S3D10065I

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

300 4.16
- +

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Расследования

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 621pF @ 0V, 1MHz 0 ns 20 µA @ 650 V 650 V 10A -55°C ~ 175°C 1.7 V @ 10 A
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