Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR804HA0G

Таблицы данных

SR804HA0G

SR804HA0G

DIODE SCHOTTKY 40V 8A DO201AD

Taiwan Semiconductor Corporation

2646 0.00
- +

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Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 8A -55°C ~ 125°C 550 mV @ 8 A
S1KLHM2G

Таблицы данных

S1KLHM2G

S1KLHM2G

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation

3463 0.00
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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF38G B0G

Таблицы данных

SF38G B0G

SF38G B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

3377 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SFAF1005G C0G

Таблицы данных

SFAF1005G C0G

SFAF1005G C0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

2494 0.00
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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SF1601GHC0G

Таблицы данных

SF1601GHC0G

SF1601GHC0G

DIODE GEN PURP 50V 16A TO220AB

Taiwan Semiconductor Corporation

2339 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 8 A
SS36L MHG

Таблицы данных

SS36L MHG

SS36L MHG

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation

2215 0.00
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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SR805 A0G

Таблицы данных

SR805 A0G

SR805 A0G

DIODE SCHOTTKY 50V 8A DO201AD

Taiwan Semiconductor Corporation

2056 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
S1KLHMHG

Таблицы данных

S1KLHMHG

S1KLHMHG

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation

3636 0.00
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF38GHB0G

Таблицы данных

SF38GHB0G

SF38GHB0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

2013 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SFAF1005GHC0G

Таблицы данных

SFAF1005GHC0G

SFAF1005GHC0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

3156 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SF1601PT C0G

Таблицы данных

SF1601PT C0G

SF1601PT C0G

DIODE GEN PURP 50V 16A TO247AD

Taiwan Semiconductor Corporation

3740 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 950 mV @ 8 A
SS36LHM2G

Таблицы данных

SS36LHM2G

SS36LHM2G

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation

3234 0.00
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SR805HA0G

Таблицы данных

SR805HA0G

SR805HA0G

DIODE SCHOTTKY 50V 8A DO201AD

Taiwan Semiconductor Corporation

2950 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
S1ML MHG

Таблицы данных

S1ML MHG

S1ML MHG

DIODE GEN PURP 1000V 1A SUB SMA

Taiwan Semiconductor Corporation

3049 0.00
- +

Добавить

Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 1000 V - 1A -55°C ~ 175°C 1.1 V @ 1 A
SF41G B0G

Таблицы данных

SF41G B0G

SF41G B0G

DIODE GEN PURP 50V 4A DO201AD

Taiwan Semiconductor Corporation

2392 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1006G C0G

Таблицы данных

SFAF1006G C0G

SFAF1006G C0G

DIODE GEN PURP 400V 10A ITO220AC

Taiwan Semiconductor Corporation

2816 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SF1601PTHC0G

Таблицы данных

SF1601PTHC0G

SF1601PTHC0G

DIODE GEN PURP 50V 16A TO247AD

Taiwan Semiconductor Corporation

2901 0.00
- +

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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 950 mV @ 8 A
SS36LHMHG

Таблицы данных

SS36LHMHG

SS36LHMHG

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation

2058 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SR806HA0G

Таблицы данных

SR806HA0G

SR806HA0G

DIODE SCHOTTKY 60V 8A DO201AD

Taiwan Semiconductor Corporation

3586 0.00
- +

Добавить

Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 8A -55°C ~ 150°C 700 mV @ 8 A
S1MLHM2G

Таблицы данных

S1MLHM2G

S1MLHM2G

DIODE GEN PURP 1000V 1A SUB SMA

Taiwan Semiconductor Corporation

3755 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 1000 V - 1A -55°C ~ 175°C 1.1 V @ 1 A
Total 48193 Records«Prev1... 15741575157615771578157915801581...2410Next»
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