Diodes-Rectifiers-Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	А	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
Таблицы данных	SF41GHB0G DIODE GEN PURP 50V 4A DO201AD Taiwan Semiconductor Corporation	2019	- + Добавить Расследования	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	4A	-55°C ~ 150°C	1 V @ 4 A
Таблицы данных	SFAF1006GHC0G DIODE GEN PURP 400V 10A ITO220AC Taiwan Semiconductor Corporation	2831	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
Таблицы данных	SF1602G C0G DIODE GEN PURP 100V 16A TO220AB Taiwan Semiconductor Corporation	2096	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	975 mV @ 8 A
Таблицы данных	TSN520M60 S4G DIODE GEN PURP 60V 20A 8PDFN Taiwan Semiconductor Corporation	3990	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	500 µA @ 60 V	60 V	20A	-55°C ~ 150°C	580 mV @ 20 A
Таблицы данных	SR809 A0G DIODE SCHOTTKY 90V 8A DO201AD Taiwan Semiconductor Corporation	3659	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	8A	-55°C ~ 150°C	920 mV @ 8 A
Таблицы данных	S1MLHMHG DIODE GEN PURP 1000V 1A SUB SMA Taiwan Semiconductor Corporation	2324	- + Добавить Расследования	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 1000 V	-	1A	-55°C ~ 175°C	1.1 V @ 1 A
Таблицы данных	SF42G B0G DIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation	2644	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	4A	-55°C ~ 150°C	1 V @ 4 A
Таблицы данных	SFAF1007G C0G DIODE GEN PURP 500V 10A ITO220AC Taiwan Semiconductor Corporation	2248	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	10A	-55°C ~ 150°C	1.7 V @ 10 A
Таблицы данных	SF1602GHC0G DIODE GEN PURP 100V 16A TO220AB Taiwan Semiconductor Corporation	3307	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	975 mV @ 8 A
Таблицы данных	TSN525M60 S4G DIODE GEN PURP 60V 25A 8PDFN Taiwan Semiconductor Corporation	3794	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	500 µA @ 60 V	60 V	25A	-55°C ~ 150°C	630 mV @ 25 A
Таблицы данных	SR809HA0G DIODE SCHOTTKY 90V 8A DO201AD Taiwan Semiconductor Corporation	3046	- + Добавить Расследования	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	8A	-55°C ~ 150°C	920 mV @ 8 A
Таблицы данных	S2A M4G DIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation	3849	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	1.5 µs	1 µA @ 50 V	50 V	2A	-55°C ~ 150°C	1.15 V @ 2 A
Таблицы данных	SF42GHB0G DIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation	2107	- + Добавить Расследования	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	4A	-55°C ~ 150°C	1 V @ 4 A
Таблицы данных	SFAF1007GHC0G DIODE GEN PURP 500V 10A ITO220AC Taiwan Semiconductor Corporation	2986	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	10A	-55°C ~ 150°C	1.7 V @ 10 A
Таблицы данных	SF1602PT C0G DIODE GEN PURP 100V 16A TO247AD Taiwan Semiconductor Corporation	2612	- + Добавить Расследования	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	950 mV @ 8 A
Таблицы данных	TSN525M60HS4G DIODE GEN PURP 60V 25A 8PDFN Taiwan Semiconductor Corporation	2101	- + Добавить Расследования	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	500 µA @ 60 V	60 V	25A	-55°C ~ 150°C	630 mV @ 25 A
Таблицы данных	SR810 A0G DIODE SCHOTTKY 100V 8A DO201AD Taiwan Semiconductor Corporation	2670	- + Добавить Расследования	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	8A	-55°C ~ 150°C	920 mV @ 8 A
Таблицы данных	S2AA M2G DIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation	3046	- + Добавить Расследования	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	1.5 µs	5 µA @ 50 V	50 V	1.5A	-55°C ~ 150°C	1.1 V @ 1.5 A
Таблицы данных	SF43G B0G DIODE GEN PURP 150V 4A DO201AD Taiwan Semiconductor Corporation	3218	- + Добавить Расследования	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	4A	-55°C ~ 150°C	1 V @ 4 A
Таблицы данных	SFAF1008GHC0G DIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation	2954	- + Добавить Расследования	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	10A	-55°C ~ 150°C	1.7 V @ 10 A

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