Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SF31G B0G

Таблицы данных

SF31G B0G

SF31G B0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

3721 0.00
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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1001G C0G

Таблицы данных

SF1001G C0G

SF1001G C0G

DIODE GEN PURP 50V 10A TO220AB

Taiwan Semiconductor Corporation

3698 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29HM4G

Таблицы данных

SS29HM4G

SS29HM4G

DIODE SCHOTTKY 90V 2A DO214AA

Taiwan Semiconductor Corporation

3329 0.00
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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1AHA0G

Таблицы данных

UF1AHA0G

UF1AHA0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3549 0.00
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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SR505 A0G

Таблицы данных

SR505 A0G

SR505 A0G

DIODE SCHOTTKY 50V 5A DO201AD

Taiwan Semiconductor Corporation

3760 0.00
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Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DL M2G

Таблицы данных

S1DL M2G

S1DL M2G

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

2154 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF31GHB0G

Таблицы данных

SF31GHB0G

SF31GHB0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

3488 0.00
- +

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Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1001GHC0G

Таблицы данных

SF1001GHC0G

SF1001GHC0G

DIODE GEN PURP 50V 10A TO220AB

Taiwan Semiconductor Corporation

2976 0.00
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Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29L M2G

Таблицы данных

SS29L M2G

SS29L M2G

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

2420 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1B A0G

Таблицы данных

UF1B A0G

UF1B A0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3168 0.00
- +

Добавить

Расследования

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SR505HA0G

Таблицы данных

SR505HA0G

SR505HA0G

DIODE SCHOTTKY 50V 5A DO201AD

Taiwan Semiconductor Corporation

2584 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DL MHG

Таблицы данных

S1DL MHG

S1DL MHG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

3413 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF32G B0G

Таблицы данных

SF32G B0G

SF32G B0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3312 0.00
- +

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Расследования

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1002G C0G

Таблицы данных

SF1002G C0G

SF1002G C0G

DIODE GEN PURP 100V 10A TO220AB

Taiwan Semiconductor Corporation

2324 0.00
- +

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Расследования

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29L MHG

Таблицы данных

SS29L MHG

SS29L MHG

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

3682 0.00
- +

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Расследования

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1BHA0G

Таблицы данных

UF1BHA0G

UF1BHA0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3439 0.00
- +

Добавить

Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SR506HA0G

Таблицы данных

SR506HA0G

SR506HA0G

DIODE SCHOTTKY 60V 5A DO201AD

Taiwan Semiconductor Corporation

2150 0.00
- +

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Расследования

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DLHM2G

Таблицы данных

S1DLHM2G

S1DLHM2G

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

2434 0.00
- +

Добавить

Расследования

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF32GHB0G

Таблицы данных

SF32GHB0G

SF32GHB0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3720 0.00
- +

Добавить

Расследования

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1002GHC0G

Таблицы данных

SF1002GHC0G

SF1002GHC0G

DIODE GEN PURP 100V 10A TO220AB

Taiwan Semiconductor Corporation

3296 0.00
- +

Добавить

Расследования

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 10A -55°C ~ 150°C 975 mV @ 5 A
Total 48193 Records«Prev1... 15701571157215731574157515761577...2410Next»
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