Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI1443EDH-T1-BE3

Таблицы данных

SI1443EDH-T1-BE3

SI1443EDH-T1-BE3

MOSFET P-CH 30V 4A/4A SC70-6

Vishay Siliconix

2960 0.56
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta), 4A (Tc) - 54mOhm @ 4.3A, 10V 1.5V @ 250µA 28 nC @ 10 V ±12V - - 1.6W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM12N100LD RM12N100LD

RM12N100LD

MOSFET N-CH 100V 12A TO252-2

Rectron USA

2055 0.16
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 4.5V, 10V 112mOhm @ 10A, 10V 2.5V @ 250µA - ±20V 1535 pF @ 15 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM80N30DF RM80N30DF

RM80N30DF

MOSFET N-CHANNEL 30V 81A 8DFN

Rectron USA

3396 0.16
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 81A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.5V @ 250µA - ±20V 2295 pF @ 15 V - 59W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM27P30LDV RM27P30LDV

RM27P30LDV

MOSFET P-CHANNEL 30V 27A TO252-2

Rectron USA

2812 0.16
- +

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Расследования

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 30mOhm @ 12A, 10V 2.5V @ 250µA - ±20V 930 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM6N100S4V RM6N100S4V

RM6N100S4V

MOSFET N-CH 100V 6A SOT223-3

Rectron USA

3875 0.16
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 6A (Ta) 10V 140mOhm @ 5A, 10V 2.5V @ 250µA - ±20V 690 pF @ 25 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJW4P06A_R2_00001

Таблицы данных

PJW4P06A_R2_00001

PJW4P06A_R2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2937 0.45
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PJW Active P-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 4.5V, 10V 110mOhm @ 4A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 785 pF @ 30 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2035UQ-7

Таблицы данных

DMP2035UQ-7

DMP2035UQ-7

MOSFET BVDSS: 8V~24V SOT23 T&R 3

Diodes Incorporated

3059 0.16
- +

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Расследования

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 20 V 4.9A (Ta) 1.8V, 4.5V 35mOhm @ 4A, 4.5V 1V @ 250µA 15.4 nC @ 4.5 V ±10V 1610 pF @ 10 V - 810mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQA410CEJW-T1_GE3 SQA410CEJW-T1_GE3

SQA410CEJW-T1_GE3

AUTOMOTIVE N-CHANNEL 20 V (D-S)

Vishay Siliconix

3705 0.45
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 7.8A (Tc) 1.8V, 4.5V 28mOhm @ 5A, 4.5V 1.1V @ 250µA 8 nC @ 4.5 V ±8V 525 pF @ 10 V - 13.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQA413CEJW-T1_GE3

Таблицы данных

SQA413CEJW-T1_GE3

SQA413CEJW-T1_GE3

AUTOMOTIVE P-CHANNEL 20 V (D-S)

Vishay Siliconix

2362 0.45
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 7.5A (Tc) 2.5V, 4.5V 38mOhm @ 4.5A, 4.5V 1.3V @ 250µA 16 nC @ 4.5 V ±12V 1350 pF @ 10 V - 13.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
DMP2066LDM-7

Таблицы данных

DMP2066LDM-7

DMP2066LDM-7

MOSFET P-CH 20V 4.6A SOT-26

Diodes Incorporated

2484 0.46
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 2.5V, 4.5V 40mOhm @ 4.6A, 4.5V 1.2V @ 250µA 10.1 nC @ 4.5 V ±12V 820 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1302DL-T1-BE3

Таблицы данных

SI1302DL-T1-BE3

SI1302DL-T1-BE3

MOSFET N-CH 30V 600MA SC70-3

Vishay Siliconix

3083 0.46
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 600mA (Ta) - 480mOhm @ 600mA, 10V 3V @ 250µA 1.4 nC @ 10 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2309CDS-T1-BE3

Таблицы данных

SI2309CDS-T1-BE3

SI2309CDS-T1-BE3

P-CHANNEL 60-V (D-S) MOSFET

Vishay Siliconix

3242 0.57
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 1.2A (Ta), 1.6A (Tc) 4.5V, 10V 345mOhm @ 1.25A, 10V 3V @ 250µA 4.1 nC @ 4.5 V ±20V 210 pF @ 30 V - 1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3474DV-T1-BE3

Таблицы данных

SI3474DV-T1-BE3

SI3474DV-T1-BE3

N-CHANNEL 100-V (D-S) MOSFET

Vishay Siliconix

2758 0.46
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 2.8A (Ta), 3.8A (Tc) 4.5V, 10V 126mOhm @ 2A, 10V 3V @ 250µA 10.4 nC @ 10 V ±20V 196 pF @ 50 V - 2W (Ta), 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM12P30S8 RM12P30S8

RM12P30S8

MOSFET P-CHANNEL 30V 12A 8SOP

Rectron USA

2066 0.17
- +

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Расследования

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 15mOhm @ 10A, 10V 3V @ 250µA - ±20V 1750 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ2408_R1_00001 PJQ2408_R1_00001

PJQ2408_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2057 0.47
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 11.5mOhm @ 10A, 10V 2.5V @ 250µA 6.9 nC @ 4.5 V ±20V 781 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJD25N04_L2_00001 PJD25N04_L2_00001

PJD25N04_L2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2084 0.47
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 5.9A (Ta), 21A (Tc) 4.5V, 10V 32mOhm @ 12A, 10V 2.5V @ 250µA 4.4 nC @ 4.5 V ±20V 425 pF @ 25 V - 2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQA401CEJW-T1_GE3 SQA401CEJW-T1_GE3

SQA401CEJW-T1_GE3

AUTOMOTIVE P-CHANNEL 20 V (D-S)

Vishay Siliconix

2250 0.47
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.75A (Tc) 2.5V, 4.5V 125mOhm @ 2.4A, 4.5V 1.3V @ 250µA 5.5 nC @ 4.5 V ±12V 330 pF @ 10 V - 13.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF510 IRF510

IRF510

MOSFET N-CH 100V 5.6A TO220AB

onsemi

3000 0.09
- +

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Расследования

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
MCH3476-TL-W

Таблицы данных

MCH3476-TL-W

MCH3476-TL-W

MOSFET N-CH 20V 2A SC70FL/MCPH3

Fairchild Semiconductor

2249 0.09
- +

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Расследования

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) - 125mOhm @ 1A, 4.5V 1.3V @ 1mA 1.8 nC @ 4.5 V ±12V 128 pF @ 10 V - 800mW (Ta) 150°C (TJ) Surface Mount
2N7000BU

Таблицы данных

2N7000BU

2N7000BU

MOSFET N-CH 60V 200MA TO92-3

Fairchild Semiconductor

2246 0.09
- +

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Расследования

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Tc) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) Through Hole
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