Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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RM35P30LDMOSFET P-CHANNEL 30V 35A TO252-2 |
3718 | 0.15 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 20mOhm @ 15A, 10V | 2.5V @ 250µA | - | ±20V | 1345 pF @ 15 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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MCM1206-TPMOSFET P-CH 12V 6A DFN2020-6J |
3879 | 0.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 4.5V | 45mOhm @ 3.5A, 4.5V | 0.9V @ 250µA | 7.8 nC @ 4.5 V | ±8V | 740 pF @ 4 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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PJQ4409P_R2_0000130V P-CHANNEL ENHANCEMENT MODE M |
2242 | 0.44 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta), 24A (Tc) | 4.5V, 10V | 30mOhm @ 4A, 10V | 2.5V @ 250µA | 7.8 nC @ 4.5 V | ±20V | 870 pF @ 15 V | - | 2W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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PJL9428_R2_0000140V N-CHANNEL ENHANCEMENT MODE M |
3573 | 0.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 6A (Ta) | 4.5V, 10V | 32mOhm @ 5A, 10V | 2.5V @ 250µA | 4.4 nC @ 4.5 V | ±20V | 425 pF @ 25 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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PJQ4460AP_R2_0000160V N-CHANNEL ENHANCEMENT MODE M |
3137 | 0.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3.7A (Ta), 11A (Tc) | 4.5V, 10V | 72mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3 nC @ 10 V | ±20V | 509 pF @ 15 V | - | 2W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI2387DS-T1-GE3P-CHANNEL -80V SOT-23, 164 M @ 1 |
2967 | 0.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 2.1A (Ta), 3A (Tc) | 4.5V, 10V | 164mOhm @ 2.1A, 10V | 2.5V @ 250µA | 10.2 nC @ 10 V | ±20V | 395 pF @ 40 V | - | 1.3W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RM10N100LDMOSFET N-CH 100V 10A TO252-2 |
3424 | 0.15 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4.5V, 10V | 130mOhm @ 10A, 10V | 2V @ 250µA | - | ±20V | 730 pF @ 50 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PMN30XPEAXSMALL SIGNAL MOSFET FOR AUTOMOTI |
2218 | 0.15 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101, TrenchMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.4A (Ta) | 2.5V, 8V | 33mOhm @ 5.4A, 8V | 1.3V @ 250µA | 16 nC @ 4.5 V | ±12V | 1025 pF @ 10 V | - | 660mW (Ta), 7.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSS84WAHZGT106PCH -60V -0.21A, SOT-323, SMALL |
2818 | 0.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 210mA (Ta) | 4.5V, 10V | 5.3Ohm @ 210mA, 10V | 2.5V @ 100µA | - | ±20V | 34 pF @ 30 V | - | 300mW (Ta) | 150°C (TJ) | Surface Mount |
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PH4030AL115SMALL SIGNAL N-CHANNEL MOSFET |
3435 | 0.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | - | 4mOhm @ 15A, 10V | 2.15V @ 1mA | 36.6 nC @ 10 V | - | 2090 pF @ 12 V | - | - | - | Surface Mount |
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RM15P60LDMOSFET P-CHANNEL 60V 13A TO252-2 |
2723 | 0.15 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Tc) | 10V | 90mOhm @ 10A, 10V | 2.5V @ 250µA | - | ±20V | 1080 pF @ 15 V | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RM27P30LDMOSFET P-CHANNEL 30V 27A TO252-2 |
3310 | 0.15 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Tc) | 4.5V, 10V | 30mOhm @ 12A, 10V | 2.5V @ 250µA | - | ±20V | 930 pF @ 15 V | - | 31.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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RM5N60S4MOSFET N-CHANNEL 60V 5A SOT223-3 |
2381 | 0.15 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4.5V, 10V | 55mOhm @ 4.5A, 10V | 2.5V @ 250µA | - | ±20V | 450 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RQ6E045BNTCRMOSFET N-CH 30V 4.5A TSMT |
2854 | 0.42 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT),Digi-Reel®,Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.5A (Tj) | 4.5V, 10V | 30mOhm @ 4.5A, 10V | 2.5V @ 1mA | 8.4 nC @ 10 V | ±20V | 330 pF @ 15 V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount |
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EFC4612R-S-TRMOSFET N-CH 24V 6A EFCP |
3975 | 0.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PXP018-30QLJPXP018-30QL/SOT8002/MLPAK33 |
2731 | 0.53 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.5A (Ta), 19.2A (Tc) | 4.5V, 10V | 18mOhm @ 7.5A, 10V | 2.5V @ 250µA | 10.8 nC @ 10 V | ±20V | 447 pF @ 15 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDN352APMOSFET P-CH 30V 1.3A SUPERSOT3 |
3733 | 0.54 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.3A (Ta) | 4.5V, 10V | 180mOhm @ 1.3A, 10V | 2.5V @ 250µA | 1.9 nC @ 4.5 V | ±25V | 150 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI1401EDH-T1-BE3MOSFET P-CH 12V 4A/4A SC70-6 |
2468 | 0.43 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 4A (Ta), 4A (Tc) | - | 34mOhm @ 5.5A, 4.5V | 1V @ 250µA | 36 nC @ 8 V | ±10V | - | - | 1.6W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI2367DS-T1-BE3P-CHANNEL 20-V (D-S) MOSFET |
3144 | 0.43 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.8A (Ta), 3.8A (Tc) | 1.8V, 4.5V | 66mOhm @ 2.5A, 4.5V | 1V @ 250µA | 23 nC @ 8 V | ±8V | 561 pF @ 10 V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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PJW3P06A_R2_0000160V P-CHANNEL ENHANCEMENT MODE M |
2313 | 0.54 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 190mOhm @ 2A, 10V | 2.5V @ 250µA | 8.3 nC @ 10 V | ±20V | 430 pF @ 30 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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