Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SQ2337ES-T1_BE3MOSFET P-CH 80V 2.2A SOT23-3 |
1976 | 0.72 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 2.2A (Tc) | 6V, 10V | 290mOhm @ 1.2A, 10V | 2.5V @ 250µA | 18 nC @ 10 V | ±20V | 620 pF @ 40 V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SQD40P10-40L_GE3MOSFET P-CH 100V 38A TO252AA |
2416 | 2.89 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 4.5V, 10V | 40mOhm @ 8.2A, 10V | 2.5V @ 250µA | 144 nC @ 10 V | ±20V | 5540 pF @ 15 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS3672MOSFET N-CH 100V 7.4A/22A 8MLP |
3489 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.4A (Ta), 22A (Tc) | 6V, 10V | 23mOhm @ 7.4A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 2680 pF @ 50 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS86300DCMOSFET N-CH 80V 24A/76A DLCOOL56 |
2198 | 3.22 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Dual Cool™, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 24A (Ta), 76A (Tc) | 8V, 10V | 3.1mOhm @ 24A, 10V | 4.5V @ 250µA | 101 nC @ 10 V | ±20V | 7005 pF @ 40 V | - | 3.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD90P03P4L04ATMA1MOSFET P-CH 30V 90A TO252-3 |
2524 | 2.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 90A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD90P04P405ATMA1MOSFET P-CH 40V 90A TO252-3 |
2027 | 2.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4.7mOhm @ 90A, 10V | 4V @ 250µA | 154 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPD90P03P404ATMA2MOSFET P-CH 30V 90A TO252-31 |
2561 | 2.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, OptiMOS®-P2 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | - | 4.5mOhm @ 90A, 10V | 4V @ 253µA | 130 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPD90P03P4L04ATMA2MOSFET P-CH 30V 90A TO252-31 |
2725 | 2.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, OptiMOS®-P2 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | - | 4.1mOhm @ 90A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC016N06NSATMA1MOSFET N-CH 60V 30A/100A TDSON |
3941 | 3.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Ta), 100A (Tc) | 6V, 10V | 1.6mOhm @ 50A, 10V | 2.8V @ 95µA | 71 nC @ 10 V | ±20V | 5200 pF @ 30 V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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ISC012N04LM6ATMA1TRENCH <= 40V PG-TDSON-8 |
3528 | 3.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 6 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 37A (Ta), 238A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2.3V @ 250µA | 64 nC @ 10 V | ±20V | 4600 pF @ 20 V | - | 3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN3R9-100YSFXMOSFET N-CH 100V 120A LFPAK56 |
3820 | 3.07 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Ta) | 7V, 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 111 nC @ 10 V | ±20V | 7360 pF @ 50 V | - | 245W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD053N08N3GATMA1MOSFET N-CH 80V 90A TO252-3 |
2517 | 3.06 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 90A (Tc) | 6V, 10V | 5.3mOhm @ 90A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS3662MOSFET N-CH 100V 8.9A/49A 8PQFN |
3122 | 3.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.9A (Ta), 49A (Tc) | 10V | 14.8mOhm @ 8.9A, 10V | 4.5V @ 250µA | 75 nC @ 10 V | ±20V | 4620 pF @ 50 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS86240MOSFET N-CH 150V 7.5A 8SOIC |
2059 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 7.5A (Ta) | 6V, 10V | 19.8mOhm @ 7.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 2570 pF @ 75 V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7478DP-T1-E3MOSFET N-CH 60V 15A PPAK SO-8 |
2931 | 2.98 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TPH7R006PL,L1QMOSFET N-CH 60V 60A 8SOP |
5000 | 0.87 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22 nC @ 10 V | ±20V | 1875 pF @ 30 V | - | 81W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIR872DP-T1-GE3MOSFET N-CH 150V 53.7A PPAK SO-8 |
2479 | 3.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 53.7A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 64 nC @ 10 V | ±20V | 2130 pF @ 75 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS7650MOSFET N-CH 30V 36A/100A 8PQFN |
3599 | 3.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 36A (Ta), 100A (Tc) | 4.5V, 10V | 0.99mOhm @ 36A, 10V | 3V @ 250µA | 209 nC @ 10 V | ±20V | 14965 pF @ 15 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIDR680DP-T1-GE3MOSFET N-CH 80V 32.8A/100A PPAK |
2561 | 3.02 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 32.8A (Ta), 100A (Tc) | 7.5V, 10V | 2.9mOhm @ 20A, 10V | 3.4V @ 250µA | 105 nC @ 10 V | ±20V | 5150 pF @ 40 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TPH3R704PL,L1QMOSFET N-CH 40V 92A 8SOP |
2007 | 0.90 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 92A (Tc) | 4.5V, 10V | 3.7mOhm @ 46A, 10V | 2.4V @ 0.2mA | 27 nC @ 10 V | ±20V | 2500 pF @ 20 V | - | 960mW (Ta), 81W (Tc) | 175°C | Surface Mount |
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